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    RJP6016JPE-00#J3 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation

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    Text: Preliminary Datasheet RJP6016JPE 600 V - 40 A- N Channel IGBT High Speed Power Switching R07DS0878EJ0100 Rev.1.00 Sep 19, 2012 Features • For Automotive application  AEC-Q101 compliant  Low collector to emitter saturation voltage. VCE sat = 1.7 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C)


    Original     		RJP6016JPE AEC-Q101 R07DS0878EJ0100 PRSS0004AE-B PDF