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    Renesas Electronics Corporation RJP6065DPM-00-T1

    (Alt: RJP6065DPM-00-T1)
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    Avnet Silica RJP6065DPM-00-T1 38 Weeks 360
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    RJP6065DPM Datasheets Context Search

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    RJP6065

    Abstract: RJP6065DPM RJP6065DP RJP6065DPM-00-T1 RJP606
    Text: Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V


    Original     		RJP6065DPM R07DS0204EJ0100 PRSS0003ZA-A RJP6065 RJP6065DPM RJP6065DP RJP6065DPM-00-T1 RJP606 PDF

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF