RN1112F Search Results

RN1112F Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
RN1112F	Toshiba	Silicon NPN Epitaxial Type (PCT Process) Transistor	Original	PDF
RN1112F	Toshiba	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Original	PDF
RN1112FS	Toshiba	TRANS DIGITAL BJT NPN 20V 50MA 3fSM	Original	PDF
RN1112FT	Toshiba		Original	PDF
RN1112FT	Toshiba	TRANS DIGITAL BJT NPN 50V 100MA 3(2-1B1A)	Original	PDF
RN1112FT	Toshiba	RN1112 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF
RN1112FTTE85LF	Toshiba	RN1112FTTE85LF - Trans Digital BJT NPN 50V 100mA 3-Pin TESM T/R	Original	PDF
RN1112FV	Toshiba	TRANS DIGITAL BJT NPN 50V 100MA 3VESM	Original	PDF

RN1112F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RN1112FT Abstract: RN1113FT RN2112FT RN2113FT Text: RN1112FT,RN1113FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112FT,RN1113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin	Original	RN1112FT RN1113FT RN2112FT, RN2113FT RN1113FT RN2112FT RN2113FT	PDF
RN1112F Abstract: RN1113F RN2112F RN2113F Text: RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process	Original	RN1112F RN1113F RN2112F, RN2113F RN1113F RN2112F RN2113F	PDF
Untitled Abstract: No abstract text available Text: RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process	Original	RN1112F RN1113F RN2112F, RN2113F RN1112F	PDF
RN1112FS Abstract: RN1113FS RN2112FS RN2113FS Text: RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1112FS, RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enables the manufacture of ever more	Original	RN1112FS RN1113FS RN1112FS, RN2112FS, RN2113FS RN1113FS RN2112FS RN2113FS	PDF
RN1112F Abstract: RN1113F RN2112F RN2113F Text: RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process	Original	RN1112F RN1113F RN2112F, RN2113F RN1113F RN2112F RN2113F	PDF
RN1112FV Abstract: RN1113FV RN2112FV RN2113FV Text: RN1112FV,RN1113FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112FV,RN1113FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm 0.22 ± 0.05 1.2 ± 0.05 Simplify circuit design 0.80 ± 0.05 Equivalent Circuit	Original	RN1112FV RN1113FV RN2112FV, RN2113FV RN1113FV RN2112FV RN2113FV	PDF
Untitled Abstract: No abstract text available Text: RN1112FT,RN1113FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112FT,RN1113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin	Original	RN1112FT RN1113FT RN2112FT, RN2113FT	PDF
Untitled Abstract: No abstract text available Text: RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1112FS, RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enables the manufacture of ever more	Original	RN1112FS RN1113FS RN1112FS, RN2112FS, RN2113FS	PDF
Untitled Abstract: No abstract text available Text: RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process	Original	RN1112F RN1113F RN2112F, RN2113F	PDF
RN1112F Abstract: RN1113F RN2112F RN2113F Text: RN1112F,RN1113F 東芝トランジスタシリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1112F,RN1113F ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用単位: mm	Original	RN1112F RN1113F RN2112F RN2113F RN1112F RN1113F RN2113F	PDF
RN1112F Abstract: RN1113F RN2112F RN2113F Text: RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process	Original	RN1112F RN1113F RN2112F RN2113F RN1113F RN2113F	PDF
RN1112F Abstract: RN1113F RN2112F RN2113F Text: RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process	Original	RN1112F RN1113F RN2112F, RN2113F RN1113F RN2112F RN2113F	PDF
Untitled Abstract: No abstract text available Text: RN1112FT,RN1113FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112FT,RN1113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin	Original	RN1112FT RN1113FT RN2112FT, RN2113FT RN1112FT	PDF
RN1112FS Abstract: RN1113FS RN2112FS RN2113FS Text: RN1112FS,RN1113FS 東芝トランジスタシリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1112FS,RN1113FS ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用	Original	RN1112FS RN1113FS RN2112FSRN2113FS RN1112FS RN1113FS RN2112FS RN2113FS	PDF

RN1112FS Abstract: RN1113FS RN2112FS RN2113FS Text: RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112FS,RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enable the manufacture of ever more	Original	RN1112FS RN1113FS RN2112FS, RN2113FS RN1113FS RN2112FS RN2113FS	PDF
RN1112FT Abstract: RN1113FT RN2112FT RN2113FT Text: RN1112FT,RN1113FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112FT,RN1113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin	Original	RN1112FT RN1113FT RN2112FT, RN2113FT RN1113FT RN2112FT RN2113FT	PDF
RN1112F Abstract: RN1113F RN2112F RN2113F Text: RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process	Original	RN1112F RN1113F RN2112F, RN2113F RN1113F RN2112F RN2113F	PDF
RN1112FT Abstract: RN1113FT RN2112FT RN2113FT Text: RN1112FT,RN1113FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1112FT, RN1113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • High-density mount is possible because of devices housed in very thin	Original	RN1112FT RN1113FT RN1112FT, RN2112FT, RN2113FT RN1112FT RN1113FT RN2112FT RN2113FT	PDF
Untitled Abstract: No abstract text available Text: RN1112FV,RN1113FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112FV, RN1113FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 1.2 ± 0.05 Simplified circuit design 0.80 ± 0.05 Equivalent Circuit	Original	RN1112FV RN1113FV RN1112FV, RN2112FV RN2113FV	PDF
RN1112FS Abstract: RN1113FS RN2112FS RN2113FS Text: RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1112FS, RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.	Original	RN1112FS RN1113FS RN1112FS, RN2112FS, RN2113FS RN1113FS RN2112FS RN2113FS	PDF
RN1112FT Abstract: RN1113FT RN2112FT RN2113FT Text: RN1112FT,RN1113FT 東芝トランジスタシリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1112FT,RN1113FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用	Original	RN1112FT RN1113FT RN2112FTRN2113FT RN1112FT RN1113FT RN2112FT RN2113FT	PDF
1117F Abstract: No abstract text available Text: T O S H IB A RN1112F,RN1113F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R •m N ■ 1117F 'm m m m m g R N 1 1 1 3 F■ m m m 'm m m m m tr SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors	OCR Scan	RN1112F RN1113F 1117F RN2112F, RN2113F 1117F	PDF
Untitled Abstract: No abstract text available Text: RN1112F,RN1113F T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1112F, RN1113F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design	OCR Scan	RN1112F RN1113F RN1112F, RN2112F, RN2113F RN1112F	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA R N 1 112F#R N 1 113F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1112F, RN1113F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design	OCR Scan	RN1112F, RN1113F RN2112F, RN2113F RN1112F	PDF

RN1112F Search Results

RN1112F Datasheets (8)

RN1112F Datasheets Context Search

RN1112FT

RN1112F

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RN1112FS

RN1112F

RN1112FV

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RN1112F

RN1112F

RN1112F

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RN1112FS

RN1112FS

RN1112FT

RN1112F

RN1112FT

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RN1112FS

RN1112FT

1117F

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