Untitled
Abstract: No abstract text available
Text: Document Number: MML09212H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML09212H
MML09212HT1
MML09212H
400--scale
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Rogers RO4350B
Abstract: RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01
Text: Document Number: MML09212H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML09212H
MML09212HT1
Rogers RO4350B
RO4350B ROGERS
GRM155R71E103KA01
25C2625
GRM1555C1H181JZ01
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RO4350B
Abstract: Rogers RO4350B microstrip RC0402FR-07-910RL YAGEO CHIP Capacitors MARKING GRM1555C1H221JZ01 ERJ2GE0R00X marking us capacitor pf l1 GRM1555C1H560JZ01 RC0402JR yageo GRM1555C1H181JZ01
Text: Freescale Semiconductor Technical Data Document Number: MML09212H Rev. 0, 10/2012 Enhancement Mode pHEMT Technology E-pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML09212H
MML09212HT1
MML09212H
RO4350B
Rogers RO4350B microstrip
RC0402FR-07-910RL
YAGEO CHIP Capacitors MARKING
GRM1555C1H221JZ01
ERJ2GE0R00X
marking us capacitor pf l1
GRM1555C1H560JZ01
RC0402JR yageo
GRM1555C1H181JZ01
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GJM1555C1H180GB01
Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
Text: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML20242H
MML20242HT1
GJM1555C1H180GB01
GRM1555C1H180JA01
C11 inductor
RC0402FR-07-1K2RL
RO4350B
Rogers RO4350B microstrip
phemt .s2p
25c2625
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MG271H
Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
Text: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low
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MMG20271H9
OT--89
MMG20271H9T1
MMG20271H9
MG271H
marking s22
GRM1555C1H1R0BA01
mmic C5 sot 86
GRM1555C1H1R2BA01
GRM1555C1H1R8BA01
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Untitled
Abstract: No abstract text available
Text: Document Number: MMG20271H9 Rev. 0, 12/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low
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MMG20271H9
MMG20271H9T1
MMG20271H9
OT--89
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Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
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MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
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MML20242H
Abstract: RO4350B Rogers RO4350B microstrip
Text: Freescale Semiconductor Technical Data Document Number: MML20242H Rev. 0, 10/2012 Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML20242H
MML20242HT1
MML20242H
RO4350B
Rogers RO4350B microstrip
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Untitled
Abstract: No abstract text available
Text: Document Number: MML20242H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML20242H
MML20242HT1
MML20242H
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Untitled
Abstract: No abstract text available
Text: Ceramic Low Pass Filter 50Ω LFCN-190+ DC to 190 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W • small size
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LFCN-190+
-55oC
100oC
FV1206
2002/95/EC)
RO4350B
M112848
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Untitled
Abstract: No abstract text available
Text: Ceramic LFCN-4400+ LFCN-4400 Low Pass Filter 50Ω DC to 4400 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W
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LFCN-4400+
LFCN-4400
-55oC
100oC
FV1206
LFCN-4400
2002/95/EC)
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LFCN 7200
Abstract: LFCN-7200
Text: Ceramic Low Pass Filter 50Ω LFCN-7200+ DC to 7200 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W
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LFCN-7200+
-55oC
100oC
FV1206
LFCN-7200D+
2002/95/EC)
RO4350B
LFCN 7200
LFCN-7200
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LFCN-160
Abstract: No abstract text available
Text: Ceramic Low Pass Filter 50Ω LFCN-160+ DC to 160 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W • small size
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LFCN-160+
-55oC
100oC
FV1206
2002/95/EC)
RO4350B
M112848
LFCN-160
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Untitled
Abstract: No abstract text available
Text: Ceramic LFCN-180+ LFCN-180 Low Pass Filter 50Ω DC to 180 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W
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LFCN-180+
LFCN-180
-55oC
100oC
FV1206
LFCN-180
2002/95/EC)
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Untitled
Abstract: No abstract text available
Text: Ceramic LFCN-180+ LFCN-180 Low Pass Filter 50Ω DC to 180 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W
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LFCN-180+
LFCN-180
-55oC
100oC
FV1206
LFCN-180
2002/95/EC)
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IFR 2525
Abstract: No abstract text available
Text: Ceramic Low Pass Filter 50Ω LFCN-3400+ DC to 3400 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W
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LFCN-3400+
-55oC
100oC
FV1206
LFCN-3400D+
2002/95/EC)
RO4350B
IFR 2525
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LFCN-5500
Abstract: No abstract text available
Text: Ceramic Low Pass Filter 50Ω LFCN-5500+ DC to 5500 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W
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LFCN-5500+
-55oC
100oC
FV1206
LFCN-5500D+
2002/95/EC)
RO4350B
LFCN-5500
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Untitled
Abstract: No abstract text available
Text: Ceramic Low Pass Filter 50Ω LFCN-5850+ DC to 5850 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W
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LFCN-5850+
-55oC
100oC
FV1206
LFCN-5850D+
2002/95/EC)
RO4350B
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Untitled
Abstract: No abstract text available
Text: Ceramic Low Pass Filter 50Ω LFCN-3400+ DC to 3400 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W
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LFCN-3400+
-55oC
100oC
FV1206
LFCN-3400D+
2002/95/EC)
RO4350B
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LFCN-190
Abstract: tb 6550
Text: Ceramic Low Pass Filter 50Ω LFCN-190+ DC to 190 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W • small size
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LFCN-190+
-55oC
100oC
FV1206
2002/95/EC)
RO4350B
M121640
LFCN-190
tb 6550
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Untitled
Abstract: No abstract text available
Text: Ceramic Low Pass Filter 50Ω LFCN-6400+ DC to 6400 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W
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LFCN-6400+
-55oC
100oC
FV1206
2002/95/EC)
RO4350B
M112848
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PDF
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Untitled
Abstract: No abstract text available
Text: Ceramic LFCN-4400+ LFCN-4400 Low Pass Filter 50Ω DC to 4400 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W
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LFCN-4400+
LFCN-4400
-55oC
100oC
FV1206
LFCN-4400D+
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lfcn-6400
Abstract: LFCN 6400
Text: Ceramic Low Pass Filter 50Ω LFCN-6400+ DC to 6400 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W
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LFCN-6400+
-55oC
100oC
FV1206
LFCN-6400D+
2002/95/EC)
RO4350B
lfcn-6400
LFCN 6400
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LFCN-5850
Abstract: No abstract text available
Text: Ceramic Low Pass Filter 50Ω LFCN-5850+ DC to 5850 MHz Maximum Ratings Features Operating Temperature -55oC to 100oC Storage Temperature -55oC to 100oC RF Power Input* 8W at 25oC DC Current Input to Output 0.5A max. at 25oC • excellent power handling, 8W
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LFCN-5850+
-55oC
100oC
FV1206
2002/95/EC)
RO4350B
M112848
LFCN-5850
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