ERNI 024069
Abstract: DIN 41652 part 2 014-730 98317G-064-2MMF 6ES7972-0BA10-0XA0 erni 413864 erni 414575 354142 243-11020-15 ERNI 334415
Text: ERNI Electronics GmbH - Cross Reference AVX Part Number 208457032004025 ERNI Part Number 003260 Category Connectors Family 2.54 mm DIN 41612 / IEC 60603-2 Connectors Type Vertical Female Connectors: Type B/2 Product discontinued. Do not use the above part number anymore!
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34-pin
Abstract: 32-PIN DS1250 DS1250AB DS1250Y
Text: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Low-power CMOS A6 6 27 A8 • Read and write access times as fast as 70 ns
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DS1250Y/AB
4096K
DS1250AB)
DS1250Y/AB
34-PIN
DS34PIN
32-PIN
DS1250
DS1250AB
DS1250Y
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32-PIN
Abstract: DS1245 DS1245AB DS1245AB-70 DS1245Y DS1245Y-70 DS1245Y-85
Text: DS1245Y/AB DS1245Y/AB 1024K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 32 VCC A16 2 31 A15 A14 3 30 NC A12 4 29 WE A7 5 28 A13 A6 6 27 A8 • Low-power CMOS A5 7 26 A9 • Read and write access times as fast as 70 ns
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DS1245Y/AB
1024K
DS1245YL/ABL
34-PIN
DS34PIN
32-PIN
DS1245
DS1245AB
DS1245AB-70
DS1245Y
DS1245Y-70
DS1245Y-85
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28256 eeprom
Abstract: DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB
Text: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile static RAM or EEPROM
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DS1230Y/AB
DS1230YL/ABL
DS34PIN
28256 eeprom
DALLAS SEMICONDUCTOR Ds1230
EEPROM 28256
dallas ds1230
a7 surface mount diode
DS1230Y-200 DALLAS
DS1230Y-70
DS1230Y-85
DQ213
DS1230AB
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Untitled
Abstract: No abstract text available
Text: Robinson 2mm Headers /Musent — 2mm Headers, Dual Row P2 Series * * * 9 * * * * High temp, surface mount compatible 2mm pin-to-pin and row-to-row spacing Vertical or right angle through hole product Right angle insulator design with ribs stabilizes connector on PCB
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OL-m 94V-0
Abstract: Robinson Nugent SM 945
Text: Robinson Nuacnt 2mm Sockets — 2mm Sockets P2 Series High temp, surface mount compatible Right angle socket offers variable standoff heights and locator posts to address 2.5" disc drive requirements Top and bottom inverse) entry option gives greater flexibility for PCB stacking
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Untitled
Abstract: No abstract text available
Text: DIMMPAK Robinson Nuaent — How to Order 8 Byte DIMM Sockets DIMS Series 5.0 volts Synch DRAM DIMS — 168 B SD 5 — TR Product S eries:. -Voltage Option 5 = 5.0 Volts Assembly Configuration: B = Single Row j£ 7 | RN DIMMPAK Plating Code: Specify TR
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MO-161
E73746
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LA 7693
Abstract: lm 7933 lm 3178 SO 607 mh 4S72 LM 2741 LM 7493 pa 3029 b Robinson Nugent s2 Lm 304 PN
Text: RN PAK-50 Low Profile 2-Piece Connectors P50L Series Low profile .276" - .472" 7-12mm mated heights to address board stacking applications Eight sizes, 20-120 contacts Hlgh-temp Insulator compatible with IR and wave soldering Low insertion/withdrawal forces
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PAK-50
7-12mm)
P50L-XXXP-A-TGF
P50L-XXXS-A-T
LA 7693
lm 7933
lm 3178
SO 607 mh
4S72
LM 2741
LM 7493
pa 3029 b
Robinson Nugent s2
Lm 304 PN
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Untitled
Abstract: No abstract text available
Text: HIGH DENSITY Dual Read Out DIMM Sockets i DIMS Series Superior shock and vibration performance User friendly ejector system for easy module removal High temp material compatible with IR processes How to Order DIMS Series DIMS — XXX — A 5 — R 1 — TR
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Untitled
Abstract: No abstract text available
Text: HIGH DENSITY Dual Read Out DIMM Sockets ^ 2^7 DIMS Series, .300" 9 Effectively provides double density pack aging in single density footprint 9 Durability - 60 cycles minimum RN DIMMPAK 9 Vertical entry allows insertion/removal without disturbing “neighboring DIMMs”
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Untitled
Abstract: No abstract text available
Text: DIMMPAK Mugent -VRAM DIMM Socket * Effectively provides double density packaging * Superior shock and vibration performance * User friendly ejector system for easy module removal High temp material compatible with IR processes
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MO-172
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Untitled
Abstract: No abstract text available
Text: VRAM DIMM Socket * Effectively provides double density packaging * Superior shock and vibration performance * User friendly ejector system for easy module removal * High temp material compatible with IR processes * Positive locking of DIMM to socket * Supports JEDEC MO-172
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MO-172
MIL-STD-1344.
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LH0101 equivalent
Abstract: No abstract text available
Text: LH0101 3 3 N a t i o n a l mm Semiconductor LH0101 Power Operational Amplifier General Description Features The LH0101 Is a wideband power operational amplifier fea turing FET inputs, Internal compensation, virtually no cross over distortion, and rapid settling time. These features make
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LH0101
LH0101
LH0101 equivalent
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Untitled
Abstract: No abstract text available
Text: HIGH DENSITY ^ 7_ Dual Read Out DIMM Sockets DIMS Series 9 Superior shock and vibration performani 9 User friendly ejector system for easy module removal 9 High temp material compatible with IR processes How to Order DIMS Series DIMS — XXX — A 5 — R 1 — TR
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Untitled
Abstract: No abstract text available
Text: 50 Mil Connectors N u gen t-With Power Ground Pin P50 Series * 20-100 position product * 2 amps/power ground pin Low insertion/withdrawal force * Redundant ribbon contact design insures high normal force, facilitates easy mateability and eliminates pin
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Untitled
Abstract: No abstract text available
Text: HIGH DENSITY 4 Byte — 8 Byte DIMM Sockets 100 position • Provides 4-byte support for 32-bit applications 112 positon MO-172 9 Supports video RAM applications 168 position MO-161 9 Offers all voltage and application keys supported by JED EC 9 Provides 8-byte support for 64-bit
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32-bit
MO-172
MO-161
64-bit
MIL-STD-1344.
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Untitled
Abstract: No abstract text available
Text: tß February 1995 Semiconductor LH0101 Power Operational Amplifier General Description Features The LH0101 is a wideband power operational amplifier fea turing F E T inputs, internal compensation, virtually no cross over distortion, and rapid settling time. These features make
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LH0101
bS011E4
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Untitled
Abstract: No abstract text available
Text: DS 1250Y/AB DALLAS DS1250Y/AB 4096K Nonvolatile SRAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power Vcc A15 • Data is automatically protected during power loss A17 • Directly replaces 512K x 8 volatile static RAM
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1250Y/AB
DS1250Y/AB
4096K
DS1250Y)
DS1250AB)
32-pin
packa10
DD13S12
DS1250Y/A
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32-PIN
Abstract: 34-PIN DS1250 DS1250AB DS1250Y al229
Text: D S 1250Y /A B DALLAS DS1250Y/AB 4096K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Vcc • Data is automatically protected during power loss A15 A17 • Directly replaces 512K x 8 volatile static RAM
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DS1250Y/AB
4096K
DS1250Y)
DS1250AB)
32-pin
DS1250Y/AB
34-PIN
68-pin
DS1250
DS1250AB
DS1250Y
al229
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Untitled
Abstract: No abstract text available
Text: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM DALLAS SEMICONDUCTOR PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power Vcc A15 • Data is automatically protected during power loss A17 • Directly replaces 512K x 8 volatile static RAM
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DS1250Y/AB
DS1250Y)
DS1250AB)
32-pin
68-pin
DS1250Y/AB
DS12S0Y/AB
34-PIN
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DS1245V
Abstract: No abstract text available
Text: DS 1245Y/A B DALLAS DS1245Y/AB 1024K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss NC 1 1 A16 A14 • DIP-package devices directly replace 128K x 8 vola
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1245Y/A
1024K
DS1245Y/AB
DS1245Y)
Hbl413D
DS1245YL/ABL
34-PIN
68-pin
34P-SM
DS1245V
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DALLAS SEMICONDUCTOR Ds1230
Abstract: dallas ds1230 EEPROM 28256 1230Y 34-PIN DS1230 DS1230AB DS1230Y CI 0740 LV 2.8 DS1230Y-150 DALLAS
Text: DS 1230Y/A B DALLAS DS1230Y/AB SEM ICON DUCTOR FEATURES 256K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I1 A7 I1 A6 I1 A5 I1 A4 I1
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DS1230
DS1230Y/AB
DS1230Y)
DS1230AB)
28-pin
2bl4130
DS1230YL/ABL
34-PIN
68-pin
DALLAS SEMICONDUCTOR Ds1230
dallas ds1230
EEPROM 28256
1230Y
DS1230AB
DS1230Y
CI 0740 LV 2.8
DS1230Y-150 DALLAS
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DS1245V
Abstract: 32-PIN 34-PIN DS1245 DS1245AB DS1245Y DS1243AB-100
Text: D S 1245Y /A B DALLAS s e m ic o n d u c t o r DS1245Y/AB 1024K Nonvolatile SRAM FEATURES PIN ASSIGNM ENT * 1 0 years minimum data retention in the absence of external power 1 1 NC A16 • Data is automatically protected during power loss Í A14 • Dl P-package devices directly replace 128K x 8 vola
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DS1245Y/AB
1024K
DS1245Y)
DS1245AB)
32-pin
2blH13D
DS1245YL/ABL
34-PIN
DS1245V
DS1245
DS1245AB
DS1245Y
DS1243AB-100
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1230Y
Abstract: No abstract text available
Text: D S 1230Y/A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I A7 I A6 I • Dl P-package devices directly replace 32K x 8 volatile
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1230Y/A
DS1230Y/AB
DS1230Y)
DS1230AB)
2bl4130
013S3t
S1230Y/AB
DS1230YL/ABL
34-PIN
DS34P
1230Y
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