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    ROHM MARKING HFE CODE Search Results

    ROHM MARKING HFE CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    ROHM MARKING HFE CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BC847B Transistors NPN General Purpose Transistor BC847B Features 1 BVCEO < 45V IC=1mA) 2) Complements the BC857B. External dimensions (Unit : mm) 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 Packaging type SST3 Marking G1F Code T116 Basic ordering unit (pieces) 3000


    Original     		PDF BC847B BC857B.

    Untitled

    Abstract: No abstract text available
    Text: IMT4FRA IMT4 Transistors AEC-Q101 Qualified General purpose dual transistors IMT4 IMT4FRA 0.3Min. ROHM : SMT6 EIAJ : SC-74 JEDEC : SOT-457 3000 1.1 0.8 SMT6 T4 T108 Marking Code Basic ordering unit (pieces) 0~0.1 Package 2.8 0.15 IMT4 IMT4FRA 0.95 0.95 1.9


    Original     		PDF AEC-Q101 SC-74 OT-457 2SA1514KFRA 2SA1514K

    2SA1514K equivalent

    Abstract: 2SA1514K T108 T4 MARKING *T4 MARKING IMT4
    Text: IMT4 Transistors General purpose dual transistors IMT4 0.3Min. 1.1 0.8 SMT6 T4 Marking Code Basic ordering unit (pieces) 0~0.1 Package 2.8 0.15 IMT4 0.95 0.95 1.9 2.9 (1) (2) 1.6 zPackage, marking, and Packaging specifications Part No. (3) (4) (5) 0.3 IMT4


    Original     		PDF 2SA1514K SC-74 OT-457 2SA1514K equivalent T108 T4 MARKING *T4 MARKING IMT4

    IMT4

    Abstract: No abstract text available
    Text: IMT4 Transistors General purpose dual transistors IMT4 0.3Min. 1.1 0.8 SMT6 T4 T108 Marking Code Basic ordering unit (pieces) 0~0.1 Package 2.8 0.15 IMT4 0.95 0.95 1.9 2.9 (1) (2) 1.6 Package, marking, and Packaging specifications Part No. (3) (4) (5) 0.3


    Original     		PDF 2SA1514K SC-74 OT-457 IMT4

    2SC1741AS

    Abstract: No abstract text available
    Text: 2SC1741AS Transistors Medium Power Transistor 50V,0.5A 2SC1741AS Features 1) High current.(IC=5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Packaging specifications and hFE Type 2SC1741AS Package hFE SPT QR Marking - Code


    Original     		PDF 2SC1741AS 150mA 2SC1741AS

    Untitled

    Abstract: No abstract text available
    Text: IMX8FRA IMX8 Transistors AEC-Q101 Qualified General purpose dual transistors IMX8 IMX8FRA SMT6 X8 T108 (1) (2) 3000 0.8 0.3Min. ROHM : SMT6 EIAJ : SC-74 1.1 2.8 0~0.1 Code Basic ordering unit (pieces) 1.6 0.15 Marking (3) IMX8 IMX8FRA (4) Part No. Package


    Original     		PDF AEC-Q101 2SC3906KFRA 2SC3906K SC-74

    Untitled

    Abstract: No abstract text available
    Text: IMX8 Transistors General purpose dual transistors IMX8 IMX8 SMT6 X8 (1) (2) (3) (4) Part No. Package 1.6 3000 0.8 0.3Min. 0~0.1 T108 1.1 2.8 0.15 Marking Code Basic ordering unit (pieces) (5) Package, marking, and packaging specifications 0.95 0.95 1.9 2.9


    Original     		PDF 2SC3906K SC-74

    Untitled

    Abstract: No abstract text available
    Text: IMX8 Transistors General purpose dual transistors IMX8 zFeatures 1) Two 2SC3906K chips in an SMT package. 2) High breakdown voltage. IMX8 SMT6 X8 T108 (1) (2) 1.6 0.8 0.3Min. 0~0.1 3000 1.1 2.8 0.15 Code Basic ordering unit (pieces) (3) (4) Part No. Package


    Original     		PDF 2SC3906K SC-74

    2SC3906K

    Abstract: T108 imx8
    Text: IMX8 Transistors General purpose dual transistors IMX8 zFeatures 1) Two 2SC3906K chips in an SMT package. 2) High breakdown voltage. IMX8 SMT6 X8 (1) (2) (3) (4) Part No. Package 1.6 3000 0.8 0.3Min. 0~0.1 T108 1.1 2.8 0.15 Marking Code Basic ordering unit (pieces)


    Original     		PDF 2SC3906K SC-74 T108 imx8

    Untitled

    Abstract: No abstract text available
    Text: IMX8 Transistors General purpose dual transistors IMX8 Power dissipation Junction temperature Storage temperature Pc Tj Tstg 300(TOTAL) 150 −55~+150 mW °C ∗ ∗ 0.3Min. °C IMX8 SMT6 X4 Marking Code Basic ordering unit (pieces) T108 3000 !Equivalent circuit


    Original     		PDF 2SC3906K SC-74 200mW

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Medium Power Transistor 50V,0.5A 2SD1949 / 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Dimensions (Unit : mm) UMT3 (SC-70) <SOT-323> (1) Emitter (2) Bace (3) Collector


    Original     		PDF 2SD1949 2SD1484K 150mA SC-70) OT-323> SC-59) OT-346> R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Medium Power Transistor 50V,0.5A 2SD1949 / 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Dimensions (Unit : mm) UMT3 (SC-70) <SOT-323> (1) Emitter (2) Bace (3) Collector


    Original     		PDF 2SD1949 2SD1484K 150mA SC-70) OT-323> SC-59) OT-346> R1120A

    UMT6 SC-88

    Abstract: SOT-363 marking ROHM 23marking Transistor code iz sot363
    Text: Data Sheet POWER SUPPLY MONITOR DEVICES EML22/UML23N Dimensions Unit : mm Features 1) Packaging Zener diode and small-signal amplifier transistor EMT6 2) Using outside connection able to use Power supply monitor device 3) When use Power supply monitor device,


    Original     		PDF EML22/UML23N SC-88) OT-363> EML22 UML23N 155ppm/ R1120A UMT6 SC-88 SOT-363 marking ROHM 23marking Transistor code iz sot363

    2SD1949

    Abstract: No abstract text available
    Text: Data Sheet AEC-Q101 Qualified Medium Power Transistor 50V,0.5A 2SD1949FRA / 2SD1484KFRA 2SD1949 / 2SD1484K Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. Dimensions (Unit : mm) UMT3 (SC-70)


    Original     		PDF AEC-Q101 2SD1949FRA 2SD1484KFRA 2SD1949 2SD1484K 150mA SC-70) OT-323> SC-59) OT-346>

    Untitled

    Abstract: No abstract text available
    Text: Chroma amplifier transistor 300V, 0.1A 2SC4061K Dimensions (Unit : mm) (2) 0.95 0.95 1.9 2.9 (3) 0.4 (1) Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 Symbol


    Original     		PDF 2SC4061K SC-59 R1120A

    Untitled

    Abstract: No abstract text available
    Text: Chroma amplifier transistor 300V, 0.1A 2SC4061K Dimensions (Unit : mm) (2) 0.95 0.95 1.9 2.9 (3) 0.4 (1) Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 Symbol


    Original     		PDF 2SC4061K SC-59 R1120A

    Untitled

    Abstract: No abstract text available
    Text: UMC1N / FMC1A Transistors Power management dual digital transistors UMC1N / FMC1A (3) R1 (4) (5) R1 0.1Min. ROHM : UMT5 EIAJ : SC-88A 1.3 Each lead has same dimensions R1 C1 C1 Code TR T148 Basic ordering unit (pieces) 3000 3000 2.9 UMT5 Marking 1.1 (4)


    Original     		PDF DTA143T DTC143T SC-88A SC-74A 50/-50V 100MHz

    2SD1980

    Abstract: No abstract text available
    Text: Power Transistor 100V, 2A 2SD1980 Dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. 2SD1980 6.5 5.1 2.3 0.75 0.65


    Original     		PDF 2SD1980 2SB1316. SC-63 100ms R1120A 2SD1980

    Untitled

    Abstract: No abstract text available
    Text: Chroma amplifier transistor 300V, 0.1A 2SC4061K Dimensions (Unit : mm) (2) 0.95 0.95 1.9 2.9 (3) 0.4 (1) Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 Limits


    Original     		PDF 2SC4061K SC-59 R1120A

    2SC3415S

    Abstract: 2SC4015 2SC4061K SC-72 T146 2SC4061
    Text: Chroma amplifier transistor 300V, 0.1A 2SC4061K / 2SC3415S / 2SC4015 Dimensions (Unit : mm) (2) (3) 0.4 (1) 2SC4061K 0.95 0.95 1.9 2.9 Features 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit.


    Original     		PDF 2SC4061K 2SC3415S 2SC4015 2SC4061K 2SC3415S SC-59 R0039A 2SC4015 SC-72 T146 2SC4061

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 100V, 2A 2SD1980 Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. Dimensions (Unit : mm) 2SD1980 6.5 5.1 2.3 0.75 0.65


    Original     		PDF 2SD1980 2SB1316. SC-63 100ms R1120A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 100V, 2A 2SD1980 / 2SD1867 zDimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1316. 2SD1980 6.5 5.1 2.3 2.5


    Original     		PDF 2SD1980 2SD1867 2SB1316. 2SD1980 SC-63 R0039A

    2SB1443

    Abstract: No abstract text available
    Text: Power Transistor −50V, −2A 2SB1443 Dimensions (Unit : mm) Features 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / 50mA. 2) Excellent DC current gain characteristics. ATV Absolute maximum ratings (Ta=25C) Parameter


    Original     		PDF 2SB1443 2SB1443 R1120A

    Untitled

    Abstract: No abstract text available
    Text: 2SD2114K Datasheet NPN 500mA 20V Muting Transistors lOutline Parameter Value VCEO IC 20V 500mA SMT3 Collector Base Emitter 2SD2114K SOT-346 SC-59 lFeatures 1) High DC current gain. hFE =2700 (Max.) 2) High emitter-base voltage. VEBO is Min. 12V 3) Low VCE(sat)


    Original     		PDF 2SD2114K 500mA 500mA OT-346 SC-59) 500mA/20mA) R1102A