IC Pin 7476

Abstract: XDM32
Contextual Info: PRELIMINARY MICRON MT8LD264 X 2 M EG x 64 DRAM M ODULE 1 DRAM MODULE 2 MEG x 64 16 MEGABYTE, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JE D E C - and industry-standard pinout in a 168-pin, dual-in-line m em ory m odule (D IM M )

Contextual Info: M IC R O N 1 MEG 8 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT (Front View • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line memory module (DIMM) • High-performance CMOS silicon-gate process • Single +5V +10% power supply • All device pins are TTL-compatible

commscope 3104

Contextual Info: Catalog 296642 Focused Product Guide Decoupled Connectors Revised 7-98 RF Connectors Continued (Continued) 50! i and 75!! BNC Bulkhead Jacks, Crimp Connector Cable Range Selection Code 50n 500 Center Termination Contact Body Type Plating Plating RG/U Cable

Contextual Info: PRELIMINARY I^ IIC R O N 2 M EG DRAM Il Jl X MT9LD272 X 72 DRAM M ODULE 2 MEG x 72 r \ I 11 C 16 MEGABYTE, ECC, 3.3V, FAST PAGE OR EDO PAGE MODE IV IU U U L t FEATURES PIN ASSIGNMENT (Front View) • JEDEC-standard ECC pinout in a 168-pin, dual-in-line memory module (DIMM)

Contextual Info: PRELIMINARY M IC R O N 1 2 MEG DRAM MODULE X MT8D264 X 64 DRAM MODULE 2 MEG x 64 16 MEGABYTE, 5V, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line memory m odule (DIMM) • High-perform ance CMOS silicon-gate process

Contextual Info: PRELIMINARY M IC Z R O N I _ « MT18LD472 X 4 MEG X 72 DRAM MODULE DRAM 4 MEG x 72 M o n i l i F IV IW U U L t. 32 MEGABYTE, ECC, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC-standard ECC pinout in a 168-pin, dual-in-line

Contextual Info: Catalog 296642 Focused Product Guide N Connectors, 50 00m RF Revised 7-98 Connectors Continued Plugs, Crimp Semi-Rigid Cable Mil Type Dual Crimp Connector Cable Range Selection Code* RG/U Cable Center Termination Contact Body Dielectric Type Plating Plating

Contextual Info: PRELIMINARY M IC R O N 1 — « 2 MEG X MT8LD264 X 64 DRAM MODULE DRAM 2 MEG x 64 M O n i l l P IV IU U U U E 16 MEGABYTE, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC- and industry-standard pinout in a 168-pin,

DM50P

Contextual Info: PRELIMINARY I^ IC R D N 1 MEG DRAM M ODULE MT4LD T 164(X) 64 DRAM MODULE X 1 M EG x 64 8 MEGABYTE, 3.3' 8 MEGABYTE’ a3V’ FASTPAGE0R EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line memory module (DIMM) • High-performance CMOS silicon-gate process

Contextual Info: PRELIMINARY MICRON I 2 MEG -PCHNOIOGV IJiC. DRAM MODULE X MT8D264 X 64 DRAM MODULE 2 MEG x 64 16 MEGABYTE, 5V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line memory module (DIMM)

Contextual Info: PRELIMINARY l^ iic n q N 2 MEG X MT9LD272 X 72 DRAM MODULE 2 MEG x 72 DRAM MODULE 16 MEGABYTE, ECC, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JE D E C -stan d ard ECC pin ou t in a 168-pin, dual-in-line m em ory m od u le (DIM M )

Contextual Info: M IC R O N I 2>4 MEG x 72 BUFFERED DRAM DIMMs MT9LD272 X , MT18LD472(F)(X) DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • JEDEC-standard ECC pinout in a 168-pin, dual in-line

DM-58

Abstract: INTERNAL DIAGRAM OF IC 7476 DM58
Contextual Info: PRELIMINARY MICRON M T4LD T 164(X ) 1 MEG x 64 DRAM M O D ULE 1 DRAM MODULE 1 MEG x 64 8 M EG ABYTE, 3.3V, FAST PAGE OR EDO PAGE M ODE FEATURES • JEDEC- an d in d u stry-stan d ard pinout in a 168-pin, dual-in-line m em ory m od u le (DIM M ) • H igh-perform ance C M O S silicon-gate process

Contextual Info: ADVANCE MICRON 8 MEG TECHNOLOGV INC. DRAM MODULE X MT36LD872 X 72 DRAM MODULE 8 MEG x 72 64 MEGABYTE, ECC, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC- and industry-standard ECC pinout in a 168pin, dual-in-line memory module (DIMM)

DM-48

Abstract: WJ 73 1113M NPHT DM4-S
Contextual Info: PRELIMINARY M IC R O N 1 MT18LD472 X 4 MEG x 72 DRAM MODULE DRAM MODULE 4 MEG x 72 32 MEGABYTE, ECC, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JE D E C -stan d ard ECC p in o u t in a 168-pin, du al-in -lin e m e m o ry m o d u le (DIM M )

la 7184

Contextual Info: MICRON 2, 4, 8 MEG X 72 BUFFERED DRAM DIMMs TECHNOLOGY. INC. DRAM MODULE MT9LD272 X MT18LD472(F)(X) MT36LD872(F)(X) FEATURES PIN ASSIGNMENT (Front View) • JEDEC-standard ECC pinout in a 168-pin, dual in-line memory module (DIMM) • 16MB (2 Meg x 72), 32MB (4 Meg x 72),

cpcap motorola audio

Abstract: cpcap motorola 3.2 51 ccp protocol DSP56009 G30-88 G38-87 SPI protocol
Contextual Info: SECTION 2 ELECTRICAL SPECIFICATIONS Table 2-1 Maximum Ratings GND = 0 Vdc Rating Symbol Value Unit Supply Voltage VCC –0.3 to +7.0 V All Input Voltages Vin (GND – 0.5) to (VCC + 0.5) V Current Drain per Pin excluding VCC and GND I 10 mA Operating Temperature Range

Contextual Info: OBSOLETE M I I C R O N 2 ’ 4 M E G x 72 BUFFERED DRAM DIMMs MT9LD272 X , MT18LD472(F)(X) DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View)

tc 97101

Contextual Info: PRELIMINARY M I I C R O N 4 M E G x 72 BUFFERED DRAM DIMM DRAM MODULE MT5LDT472 X For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT (Front View) • JED EC-standard ECC pinout in a 168-pin, dual in-line

MT5LDT472

Abstract: fpm 75 64mb edo ecc
Contextual Info: PRELIMINARY 4 MEG x 72 BUFFERED DRAM DIMM DRAM MODULE MT5LDT472 X For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT (Front View) • JEDEC-standard ECC pinout in a 168-pin, dual inline memory module (DIMM)

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Contextual Info: IS28F200BV/BLV 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION NOVEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V o r 5V Read Operation • High-Performance Read Maximum Access Tim es — 5V: 60/80/120 ns

FPM DRAM

Abstract: MT18LD472
Contextual Info: OBSOLETE 2, 4 MEG x 72 BUFFERED DRAM DIMMs DRAM MODULE MT9LD272 X , MT18LD472(F)(X) For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES PIN ASSIGNMENT (Front View) • JEDEC-standard ECC pinout in a 168-pin, dual inline memory module (DIMM)