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    RQA0002DNS Price and Stock

    Renesas Electronics Corporation RQA0002DNSTB-E

    MOSFET N-CH 16V 3.8A 2HWSON
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    DigiKey RQA0002DNSTB-E Reel
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    Rochester Electronics RQA0002DNSTB-E 9,270 1
    • 1 $3.81
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    • 100 $3.58
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    Rochester Electronics LLC RQA0002DNSTB-E

    RQA0002DNS - N CHANNEL MOSFET
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    DigiKey RQA0002DNSTB-E Bulk 76
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    RQA0002DNS Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RQA0002DNS Renesas Technology Silicon N-Channel MOS FET Original PDF
    RQA0002DNS Renesas Technology Silicon N-Channel MOS FET Original PDF
    RQA0002DNSTB-E Renesas Technology Transistor Mosfet N-CH 16V 3.8A 3HWSON-2 T/R Original PDF
    RQA0002DNSTB-E Renesas Technology Silicon N-Channel MOS FET Original PDF

    RQA0002DNS Datasheets Context Search

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    RQA0002DNS

    Abstract: marking Y1 rqa0002 RQA0002 RQA0002DNSTB-E WSON0504-2
    Text: RQA0002DNS Silicon N-Channel MOS FET REJ03G0583-0200 Rev.2.00 Aug 03, 2006 Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz • Small outline package (WSON0504-2: 5.0 x 4.0 × 0.8 mm)


    Original     		PDF RQA0002DNS REJ03G0583-0200 WSON0504-2: PWSN0002ZA-B WSON0504-2> RQA0002" RQA0002DNS marking Y1 rqa0002 RQA0002 RQA0002DNSTB-E WSON0504-2

    RQA0002DNS

    Abstract: RQA0002DNSTB-E PG1020 RQA0002
    Text: RQA0002DNS Silicon N-Channel MOS FET REJ03G0583-0301 Rev.3.01 Nov 21, 2007 Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz • Small outline package (WSON0504-2: 5.0 x 4.0 × 0.8 mm)


    Original     		PDF RQA0002DNS REJ03G0583-0301 WSON0504-2: PWSN0002ZA-B WSON0504-2> RQA0002" RQA0002DNS RQA0002DNSTB-E PG1020 RQA0002

    Untitled

    Abstract: No abstract text available
    Text: RQA0002DNS Silicon N-Channel MOS FET REJ03G0583-0300 Rev.3.00 Oct 20, 2006 Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz • Small outline package (WSON0504-2: 5.0 x 4.0 × 0.8 mm)


    Original     		PDF RQA0002DNS REJ03G0583-0300 WSON0504-2: PWSN0002ZA-B WSON0504-2> RQA0002"

    RQA0002

    Abstract: marking us capacitor pf l1 RQA0002DNS RQA0002DNSTB-E marking Y1 rqa0002 WSON0504-2
    Text: RQA0002DNS Silicon N-Channel MOS FET REJ03G0583-0100 Rev .1.00 Sep 26, 2005 Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz • Small outline package (WSON0504-2: 5.0 x 4.0 × 0.8 mm)


    Original     		PDF RQA0002DNS REJ03G0583-0100 WSON0504-2: PWSN0002ZA-B WSON0504-2> RQA0002" RQA0002 marking us capacitor pf l1 RQA0002DNS RQA0002DNSTB-E marking Y1 rqa0002 WSON0504-2

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009