Untitled
Abstract: No abstract text available
Text: CLA864A CLA864B CLA864C I .155 L l. rrJ Transistor Output GENERAL DESCRIPTION — The Clairex CLA864 series of axial lead isolators are designed for those applications where high voltage isolation requirements apply. They consist of an infrared LED coupled with an NPN phototransistor pro
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CLA864A
CLA864B
CLA864C
CLA864
150mw
CLAB64C
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BUZ21
Abstract: schematic diagram UPS din 40040 humidity
Text: rrj SCS-THOMSON 4-1% BUZ21 * 7 / . N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on •d BUZ21 100 V 0.1 ß 19 A . 100 VOLTS - FOR DC/DC CONVERTERS . H IG H CURRENT . RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦ . ULTRA FAST SWITCHING
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BUZ21
BUZ21
O-220
schematic diagram UPS
din 40040 humidity
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Untitled
Abstract: No abstract text available
Text: r m COPYRIGHT BT TCP CONNECTOR ALL RIGHTS RESERVED. MECHANICAL: 10 ELECTRICAL: 4D15ET 10/100 BASE-T PoE CIRCUIT AA £ 0. O o a . a : Q. Q Q. + ? D1 D2 D5 D6 TOUisU^ o t<LLb=Lso nrrrm rrj SHIELD rnmn*|[]| -W-rW-KH-Kl- | |_ D3 D4 D7 D8 CMC2 CMC1 T4 T3 4»—
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4D15ET
23APR2013
MAG45
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7a2 diode
Abstract: CT 7A2 ERA22 marking AY marking A.Y
Text: ERA22 o .5 A I Outline Drawings FAST RECOVERY DIODE : Features • m >m , 5mn lt '- y * - a K ftAiiJffi • S I tf i M arking Ultra smalt package. Possible fo r 5 m m pitch autom atic insertion Ä 7 - - 3 - K -ft Color code : Green High voltage by mesa design.
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ERA22
ERA22-02-
IRA22-
7a2 diode
CT 7A2
marking AY
marking A.Y
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 60A /400V /trr : 60nsec KCF60A40E FEATURES o Similar to TO-247AC x 2 Case. ODual Diodes-Cathode Common o Ultra-Fast Recovery oLow Forward Voltage Drop o High Surge Capability Approx. Net Weight: 30 Grams MAXIMUM RATINGS '\T y p e Voltage Rating
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/400V
60nsec
KCF60A40E
O-247AC
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Diode 20A/30v
Abstract: FCH20A03L
Text: SCHOTTKY BARRIER DIODE FCH20A03L 20 A/ 30V 3.K-122 FEATURES o T0-220AB Fully Molded ODual Diodes - Cathode Common o L o w Forw ard V oltage Drop O High Surge Capability o T j = 150°C operation 2.5Ì.0MI FCH20A.L Dimensions in mm Inches) Approx. Net Weight : 1.75 Grams
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0A/30V
FCH20A03L
T0-220AB
K-122)
-W-16'
FCH20A.
bbl5123
0D02052
Diode 20A/30v
FCH20A03L
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BAR19
Abstract: No abstract text available
Text: C T SG S-TH O M SO N ^ 7 # . HDlgœilLIgTOOIfSlDgi BAR 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Repetitive Peak Reverse Voltage
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON STH55N10 STH55N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 55N 10 STH55N1 OFI Vdss R D S on Id 100 V 100 V 0.030 U 0.030 S2 55 A 33 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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STH55N10
STH55N10FI
STH55N1
175cC
O-218
ISOWATT218
STH55N10/FI
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Untitled
Abstract: No abstract text available
Text: C T SGS-THOMSON ^ 7# . H D »H LI TO s lfS lD (g i 12P -1000 BYT FAST RECOVERY RECTIFIER DIODE • VERY HIGH REVERSE VOLTAGE CAPABILITY ■ VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING SUITABLE APPLICATIONS
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10jus
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Untitled
Abstract: No abstract text available
Text: ERA22 o .5A I O utline D raw ings FAST RECOVERY DIODE : Features • m>m, 5 mnlt'-y*- a K ftA iiJ ffi • S I tf i M arking Ultra smalt package. Possible fo r 5 m m pitch autom atic insertion Ä 7 - - 3 - K -ft Color code : Green High voltage by mesa design.
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ERA22
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R101
Abstract: No abstract text available
Text: 1F60A-120F/R wnmtm: Outline Drawings FAST RECOVERY DIODE MODULE • ¡N fS : Features • 'M il • K M • iSEiliftJE Small and Lightweight High Voltage • Non-insulated Type ■ ffljÊ > Applications • ^’ 7 - l ' 7 Snuber Diode ’ Maximum Ratings and Characteristics
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1F60A-120F/R
1F60A-Ã
F60A-120R
R101
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TFM 1380 T
Abstract: No abstract text available
Text: 1D I 3 O O M - O 5 O 300a Ä ± / < 7— ✓\ ° 7 - ' Outline Drawings POWER TRANSISTOR MODULE • Features • hFE*v'' \.v High DC Current Gain • High speed switching Including Free Wheeling Diode .Insulated Type • A p p licatio n s • ’X M .t) 7*4 "/•?■>?
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E82988
1995-9Cl95t/R89)
TFM 1380 T
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ESAD83-004
Abstract: LT460
Text: ESAD83-004 30 a g ± 'jv m * * y 5 j— K SCHOTTKY BARRIER DIODE : Features Low VF S uper high speed s w itc h in g . Connection Diagram High reliability by planer d esign. : Applications High speed pow er sw itch in g . M axim um Ratings and Characteristics
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ESAD83-004
500ns
LT460
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LTWF
Abstract: diode T-71 F151 SIH31 T151 diode b129 aabi
Text: SIH31 1 5 0 A : Outline _ Drawings GENERAL-USE RECTIFIER DIODE Features • High reverse voltage capability • Stud mounted : A pplications • '<'y'T,) —l£WW2& Battery chargers Brush-less generators • Others. M axim um Ratings and C haracteristics
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SIH31
SIH31
50HzjEKÂ
Mftl80Â
19S24^
I95t/R89)
LTWF
diode T-71
F151
T151
diode b129
aabi
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CAR HORN Specification
Abstract: car horn car reverse horn car reverse horn result car reverse horn note absolute car alarm
Text: 26110.4 5349 AC SMOKE DETECTOR WITH INTERCONNECT AND TIMER GUARD2 DETECT. IN G UAR Di SENSITIVITY SET OSC, CAR. HORN 2 HORN-? The A5349CA is a low-current, CMOS circuit providing all of the required features for an ionization-type smoke detector. A networking
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A5349CA
UL217.
CAR HORN Specification
car horn
car reverse horn
car reverse horn result
car reverse horn note
absolute car alarm
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LT 5203
Abstract: a5201
Text: Temic TSHA520. S h m i n n d u t l •* r v GaAlAs Infrared Emitting Diodes in 05 mm (T-1% Package Description The TSH A 520. series are high efficiency infrared em itting diodes in G aA lA s on G aA lA s technology, m olded in a clear, untinted plastic package.
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TSHA520.
l5-Jul-96
LT 5203
a5201
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Untitled
Abstract: No abstract text available
Text: FUJI s ik ô iE ir ü ô U Ê 2SK2766-01R N-channel MOS-FET FAP-IIS Series 800V 7A High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 55 .3.5 0.6 > Applications -
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2SK2766-01R
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B452
Abstract: RRJ diode h11q
Text: 2DI75Z-140 75a '• O u tlin e D ra w in g s POWER TRANSISTOR MODULE : Features • iSHJŒ High Voltage • 7 ')— f r 'l'J 's 'ÿ ÿ 'f J '— KF*3 • A S O A '7 2 ;v .' • Including Freewheeling Diode E xc e lle n t S a fe O p eratin g Area In su late d Type
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2DI75Z-140
l9St/R89)
B452
RRJ diode
h11q
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M74HC174
Abstract: No abstract text available
Text: / T T S G S -T H O M S O N *7# [M œ m itg ra o W S M54HC174 M74HC174 HEX D-TYPE FLIP-FLOP WITH CLEAR • HIGH SPEED fMAX = 48 MHz TYP. at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 /iA (MAX.) at T a = 25°C ■ HIGH NOISE IMMUNITY 1 V NIH = V n il = 2 °/o V c c (MIN.)
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M54HC174
M74HC174
54/74LS174
M74HC174
M54HC174
M54/74HC174
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y • POWER MOS IVe APT5025BN -APT4525BN APT5030BN APT4530BN 500V 450V 500V 450V 23.0A 23.0A 21.0A 21.0A 0.25Q 0.25Q 0.30Q 0.30Q N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
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APT5025BN
-APT4525BN
APT5030BN
APT4530BN
5025BN
4530BN
4525BN
5030BN
APT5025/4525/5030/4530BN
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON TDE0160 H[l g^ i[LI©¥[S(ô !HO(gi PROXIMITY DETECTOR • SUPPLY VOLTAGE : +4TO +36V ■ SUPPLY CURRENT : < 1.2mA ■ OUTPUT TRANSISTORS : I = 20mA; V ce (sat) ¿ 1 100mV ■ OSCILLATOR FREQUENCY : < 1MHz ■ LOSS RESISTANCE : 5 TO 5 0 k il DIP14
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TDE0160
100mV
DIP14
TDE0160
TDE0160DP
DIP14)
7121E37
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Untitled
Abstract: No abstract text available
Text: bi v h {'-ÊiMM Photosensor Units Transmittive Type) ON1531 HA-(M ) ,O N1531LA-(M ) • Outline O N 1 5 3 1 H A -{ M ), O N I 5 3 1 LA —(M )l i , ^ O G a A s ^ & j f c / ' f t - K £ , 'S f t S G K * h ? - f 1 ~ K t M # # y i l a l l f & t 1 *■ 7 — 7 h T '- t o
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ON1531
N1531LA-
ON153U
ON153lLA-
ON1531HA-
ON1531LA-
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Siemens pulse sequence
Abstract: power supply siemens s5 Siemens diode Ssi
Text: SIEMENS mmmmmmwm•■tWhP CGY 191 GaAs MMIC • • • • • Dual mode power amplifier for CDMA /TDMA portable cellular phones 29 dBm linear output power PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match
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62702G
Siemens pulse sequence
power supply siemens s5
Siemens diode Ssi
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250A darlington transistor
Abstract: No abstract text available
Text: POlilEREX INC m 3 ^ /m E i> m 75^41=51 D00411S ô «PRX T '2 3 ~ 3 S ~ KD7245A1 X Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Dual Darlington
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D00411S
KD7245A1
BP107,
Amperes/600
250A darlington transistor
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