MPN3002
Abstract: 1N5719 1N5767 MPN3001
Text: Glass Package PIN Diodes for RF Switching and Attenuating A15 PACKAGE Description: Features: The switching diodes are designed for low power, general-purpose switch and switching applications up to 2 GHz. The attenuator diodes have guaranteed R S slopes making them ideal for impedance matched attenuators
|
Original
|
MIL-PRF-19500
A17007
MPN3002
1N5719
1N5767
MPN3001
|
PDF
|
AN0015
Abstract: pi RESISTOR NETWORK NBB-300 RFMD nbb 402 RP Lchoke
Text: AN0015 15 AN0015 Design of “PI” and “T” Network Attenuators for Inter-Stage Buffering Design of “PI” and “T” Network Attenuators for Inter-Stage Buffering The NBB and NDA-series matched amplifiers may be cascaded in a driver chain or used adjacent to other components
|
Original
|
AN0015
AN0015
pi RESISTOR NETWORK
NBB-300
RFMD nbb
402 RP
Lchoke
|
PDF
|
N0044
Abstract: n003620 Model 52K N0008 N0034 N0018
Text: SPICE Model Tutorial of the RSLIC18 AC Loop Application Note October 1998 AN9824 Author: Edward Berrios Introduction providing superb matching, temperature stability and gain accuracies. The AC loop of the RSLIC18 refers to the voice band path which provides full duplex
|
Original
|
RSLIC18TM
AN9824
RSLIC18
N0044
n003620
Model 52K
N0008
N0034
N0018
|
PDF
|
AN9824
Abstract: n003620 9824 Model 52K 400Z HC55180 HC55181 HC55182 HC55183 HC55184
Text: SPICE Model Tutorial of the RSLIC18 AC Loop Application Note October 1998 AN9824 Author: Edward Berrios Introduction providing superb matching, temperature stability and gain accuracies. The AC loop of the RSLIC18 refers to the voice band path which provides full duplex
|
Original
|
RSLIC18TM
AN9824
RSLIC18
RSLIC18
AN9824
n003620
9824
Model 52K
400Z
HC55180
HC55181
HC55182
HC55183
HC55184
|
PDF
|
N0044
Abstract: AN9824 400Z HC55180 HC55181 HC55182 HC55183 HC55184 4.00z N0033 A
Text: SPICE Model Tutorial of the RSLIC18 AC Loop TM Application Note October 1998 AN9824 providing superb matching, temperature stability and gain accuracies. The AC loop of the RSLIC18 refers to the voice band path which provides full duplex signal communication and
|
Original
|
RSLIC18TM
AN9824
RSLIC18
RSLIC18
N0044
AN9824
400Z
HC55180
HC55181
HC55182
HC55183
HC55184
4.00z
N0033 A
|
PDF
|
cw DWDM laser 1610
Abstract: Samsung Electronics Company DFB DL47B3A GR-468-CORE connector SAMSUNG 30 PIN SAMSUNG DL47B3A
Text: 1 Technical Data Sheet August 2001 OPTOELECTRONICS DIVISION DL47B3A 2.5 Gbps 1550 nm Direct Modulation DFB Laser Module Features ¾ High-performance MQW DFB Laser ¾ Built-in TEC, Thermistor and Monitor PD ¾ 25Ω Input Impedance Matching ¾ Built-in Optical Isolator
|
Original
|
DL47B3A
14-pin
GR-468-CORE
OC-48/STM-16
cw DWDM laser 1610
Samsung Electronics Company DFB
DL47B3A
GR-468-CORE
connector SAMSUNG 30 PIN
SAMSUNG DL47B3A
|
PDF
|
transistor t2
Abstract: 61 TRANSISTOR Q62702-C2158 transistor marking T2 marking BCV Q62702-C2159 Q62702-C2160 Q62702-C2155 transistor T1 Q62702-C2157
Text: NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage ● Type Marking Ordering Code tape and reel BCV 61 A BCV 61 B BCV 61 C
|
Original
|
Q62702-C2155
Q62702-C2156
Q62702-C2157
OT-143
transistor t2
61 TRANSISTOR
Q62702-C2158
transistor marking T2
marking BCV
Q62702-C2159
Q62702-C2160
Q62702-C2155
transistor T1
Q62702-C2157
|
PDF
|
JC JB jt
Abstract: CP-24-7 AD833
Text: FEATURES Low noise Input voltage noise: 0.85 nV/√Hz Current noise: 2.0 pA/√Hz Excellent ac specifications 200 MHz bandwidth @ G = 4 271 V/ s slew rate Selectable Gain: x4, ×8, ×12, ×16 Active input impedance matching Single-ended input, differential output
|
Original
|
AD8432
AD8432
24-Lead
CP-24-7)
AD8432ACPZ1
AD8432ACPZ-R71
AD8432ACPZ-RL1
AD8432ACPZ-WP1
AD8432-EVALZ1
JC JB jt
CP-24-7
AD833
|
PDF
|
DL47B3A
Abstract: GR-468-CORE dfb 10mw cw DWDM laser 1610
Text: 1 Technical Data Sheet February 2002 FIBEROPTICS DIVISION DL47B3A 2.5 Gbps 1550 nm Direct Modulation DFB Laser Module Features ¾ High-performance MQW DFB Laser ¾ Built-in TEC, Thermistor and Monitor PD ¾ 25Ω Input Impedance Matching ¾ Built-in Optical Isolator
|
Original
|
DL47B3A
14-pin
GR-468-CORE
OC-48/STM-16
DL47B3A
GR-468-CORE
dfb 10mw
cw DWDM laser 1610
|
PDF
|
CP-24-7
Abstract: PRB-4
Text: FEATURES Low noise Input voltage noise: 0.85 nV/√Hz Current noise: 2.0 pA/√Hz High speed 200 MHz bandwidth G = 12.04 dB 295 V/µs slew rate Selectable gain G = 12.04 dB (x4) G = 18.06 dB (×8) G = 21.58 dB (×12) G = 24.08 dB (×16) Active input impedance matching
|
Original
|
AD8432
AD8432ACPZ-R7
AD8432ACPZ-RL
AD8432ACPZ-WP
AD8432-EVALZ
24-Lead
4-12-2012-A
CP-24-7
PRB-4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FEATURES Low noise Input voltage noise: 0.85 nV/√Hz Current noise: 2.0 pA/√Hz High speed 200 MHz bandwidth G = 12.04 dB 295 V/µs slew rate Selectable gain G = 12.04 dB (x4) G = 18.06 dB (×8) G = 21.58 dB (×12) G = 24.08 dB (×16) Active input impedance matching
|
Original
|
AD8432
AD8432ACPZ-R7
AD8432ACPZ-RL
AD8432ACPZ-WP
AD8432-EVALZ
24-Lead
CP-24-7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Electrical Specifications Subject to Change LTC6401-20 1.3GHz Low Noise, Low Distortion Differential ADC Driver for 140MHz IF FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.3GHz –3dB Bandwidth Fixed Gain of 10V/V 20dB 40.8dBm OIP3 at 140MHz
|
Original
|
LTC6401-20
140MHz
140MHz.
16-bit
LTC64
TCM4-19
LTC6401CUD-20
LT1993-2/LT1993-4/
LT1993-10
|
PDF
|
7025 vacuum tube
Abstract: 7119 tube 33566 nt 9731 xl 1225 AN267 xl 1225 transistor transistor 9747 34018 9033 transistor
Text: Order this document by AN267/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN267 MATCHING NETWORK DESIGNS WITH COMPUTER SOLUTIONS Prepared by: Frank Davis INTRODUCTION One of the problems facing the circuit design engineer is the design of high-frequency matching networks. Careful
|
Original
|
AN267/D
AN267
7025 vacuum tube
7119 tube
33566
nt 9731
xl 1225
AN267
xl 1225 transistor
transistor 9747
34018
9033 transistor
|
PDF
|
AN267
Abstract: motorola transistor 7439 57075 xl 1225 transistor Silver mica capacitor xl 1225 32282 8233 vacuum tube transistor 7746
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN267/D SEMICONDUCTOR APPLICATION NOTE AN267 Matching Network Designs with Computer Solutions Prepared by: Frank Davis Freescale Semiconductor, Inc. INTRODUCTION One of the problems facing the circuit design engineer
|
Original
|
AN267/D
AN267
AN267
motorola transistor 7439
57075
xl 1225 transistor
Silver mica capacitor
xl 1225
32282
8233 vacuum tube
transistor 7746
|
PDF
|
|
|
ADG201
Abstract: ADG444BN ADG441 ADG441BN ADG442 ADG444 DG211 ADG202 ADG211
Text: a FEATURES 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Low On Resistance < 70 Ω Low ∆RON (9 Ω max) Low RON Match (3 Ω max) Low Power Dissipation Fast Switching Times tON < 110 ns tOFF < 60 ns Low Leakage Currents ( 3 nA max) Low Charge Injection (6 pC max)
|
Original
|
DG201A/ADG201A,
DG202A/ADG202A,
DG211/ADG211A
DG441/DG442/DG444
ADG441/ADG442/ADG444
ADG441BN
ADG441BR
ADG441TQ
ADG442BN
ADG201
ADG444BN
ADG441
ADG441BN
ADG442
ADG444
DG211
ADG202
ADG211
|
PDF
|
Untitled
Abstract: No abstract text available
Text: a FEATURES 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Low On Resistance < 70 Ω Low ∆RON (9 Ω max) Low RON Match (3 Ω max) Low Power Dissipation Fast Switching Times tON < 110 ns tOFF < 60 ns Low Leakage Currents ( 3 nA max) Low Charge Injection (6 pC max)
|
Original
|
DG201A/ADG201A,
DG202A/ADG202A,
DG211/ADG211A
DG441/DG442/DG444
ADG441/ADG442/ADG444
ADG441
ADG444
C1890
|
PDF
|
ADG1436YRUZ
Abstract: No abstract text available
Text: 1.5 Ω On Resistance, ±15 V/12 V/±5 V, iCMOS, Dual SPDT Switch ADG1436 FEATURES FUNCTIONAL BLOCK DIAGRAMS 1.5 Ω on resistance 0.3 Ω on-resistance flatness 0.1 Ω on-resistance match between channels Continuous current per channel LFCSP package: up to 400 mA
|
Original
|
ADG1436
16-lead
ADG1436YRUZ
ADG1436YRUZ-REEL71
ADG1436YCPZ-REEL1
ADG1436YCPZ-REEL71
|
PDF
|
ADG1436YRUZ-REEL7
Abstract: MO-220-VGGC ADG1436 ADG1436YRUZ SPDT relay 12v
Text: 1.5 Ω On Resistance, ±15 V/12 V/±5 V, iCMOS, Dual SPDT Switch ADG1436 FEATURES FUNCTIONAL BLOCK DIAGRAMS 1.5 Ω on resistance 0.3 Ω on-resistance flatness 0.1 Ω on-resistance match between channels Continuous current per channel LFCSP package: up to 400 mA
|
Original
|
ADG1436
16-lead
CP-16-13)
ADG1436YRUZ
ADG1436YRUZ-REEL71
ADG1436YCPZ-REEL1
ADG1436YCPZ-REEL71
ADG1436YRUZ-REEL7
MO-220-VGGC
ADG1436
SPDT relay 12v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1.5 Ω On Resistance, ±15 V/12 V/±5 V, iCMOS, Dual SPDT Switch ADG1436 FUNCTIONAL BLOCK DIAGRAMS FEATURES 1.5 Ω on resistance 0.3 Ω on-resistance flatness 0.1 Ω on-resistance match between channels Continuous current per channel LFCSP package: up to 400 mA
|
Original
|
ADG1436
16-lead
CP-16-13)
ADG1436YRUZ
ADG1436YRUZ-REEL71
ADG1436YCPZ-REEL1
ADG1436YCPZ-REEL71
|
PDF
|
F0311018S
Abstract: Frequency Generator 1GHz Picosecond Pulse Labs amplifier picosecond 2100
Text: SUMITOMO ELECTRIC INDUSTRIES, LTD. 00.02.28 ♦ Features F0311018S 1 GHz Bandwidth • +5 V single power supply • 19 dB typical gain • 1.2 GHz typical 3 dB-cutoff-frequency • On-chip matching to 50 Ω • 40 mA typical operating current • Low-cost 8-lead SOP package
|
Original
|
F0311018S
F0311018S
Frequency Generator 1GHz
Picosecond Pulse Labs amplifier
picosecond 2100
|
PDF
|
Adg441
Abstract: No abstract text available
Text: a FEATURES 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Low On Resistance < 70 Ω Low ∆RON (9 Ω max) Low RON Match (3 Ω max) Low Power Dissipation Fast Switching Times tON < 110 ns tOFF < 60 ns Low Leakage Currents ( 3 nA max) Low Charge Injection (6 pC max)
|
Original
|
DG201A/ADG201A,
DG202A/ADG202A,
DG211/ADG211A
DG441/DG442/DG444
ADG441/ADG442/ADG444
ADG441
ADG444
pdf/20010521/11may2001/html/ADG441
|
PDF
|
r16a diode
Abstract: adg444br ADG441BR ADG441TCHIPS
Text: a FEATURES 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Low On Resistance < 70 Ω Low ∆RON (9 Ω max) Low RON Match (3 Ω max) Low Power Dissipation Fast Switching Times tON < 110 ns tOFF < 60 ns Low Leakage Currents ( 3 nA max) Low Charge Injection (6 pC max)
|
Original
|
DG201A/ADG201A,
DG202A/ADG202A,
DG211/ADG211A
DG441/DG442/DG444
ADG441/ADG442/ADG444
ADG441
ADG444
images/ADG441
r16a diode
adg444br
ADG441BR
ADG441TCHIPS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 38V 2228 1 2 .2 — 1 2 .8 G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING U n i t : m il l i m e t e r s in c h e s ' The M G F K 3 8 V 2 2 2 8 is an internally impedance matched GaAs power F E T especially designed fo r use in 12 .2 ~ 12.8
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Double Transistors BCV61 • To be used as a current mirror • Good thermal coupling and V be matching • High current gain • Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 61 A BCV61 B BCV 61 C 1Js 1Ks
|
OCR Scan
|
BCV61
BCV61
Q62702-C2155
Q62702-C2156
Q62702-C2157
OT-143
fi235b05
fl235b05
|
PDF
|
