net-f
Abstract: No abstract text available
Text: FS98O24 Data Sheet 8-bit MCU with 4k program EPROM, 256-byte RAM, 2 low noise OPAMP, DMM function network,1 14-bit ADC, 4 x 20 LCD driver and RTC Rev. 0.2 Jun, 2006 Fortune Semiconductor Corp. FS98O24-DS-02_EN CR-004 FS98O24 Taipei Office： 28F, No.27, Sec. 2, Zhongzheng E. Rd.,
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FS98O24
256-byte
14-bit
FS98O24-DS-02
CR-004
FS98O24
net-f
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Untitled
Abstract: No abstract text available
Text: OPA861 www.ti.com SBOS338G – AUGUST 2005 – REVISED MAY 2013 Wide Bandwidth Operational Transconductance Amplifier OTA Check for Samples: OPA861 FEATURES 1 • • • • • Wide Bandwidth (80MHz, Open-Loop, G = +5) High Slew Rate (900V/µs) High Transconductance (95mA/V)
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OPA861
SBOS338G
80MHz,
95mA/V)
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Untitled
Abstract: No abstract text available
Text: rz T ^7# SCS-THOMSON RSIB»liLiCTl iDei STZTA42 MEDIUM POWER AMPLIFIER . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL
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STZTA42
STZTA92
OT223
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Truth Table 74191
Abstract: 74191 The truth table pin diagram of 74LS191 74191 truth table 74191 logic diagram 74191 state diagram 74191 74LS191 pins 74LS191PC 74LS191FC
Text: 191 C O N N E C T IO N D IA G R A M PIN O U T A 54/74191 6 ^4L S /74LS 191 p i|T / UP/DOW N BINARY COUNTER W ith Preset and Ripple Clock D E S C R IP T IO N — T he '191 is a reve rsib le m o d u lo -1 6 b in a ry c o u n te r fe a tu rin g s y n c h ro n o u s c o u n tin g and a s ych ro n o u s p re se ttin g . T h e p reset fe a ture
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54LS/74LS191
modulo-16
190data
Truth Table 74191
74191 The truth table
pin diagram of 74LS191
74191 truth table
74191 logic diagram
74191 state diagram
74191
74LS191 pins
74LS191PC
74LS191FC
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Truth Table 74190
Abstract: 74190PC 74190 circuit rc tc 74190 counter 74LS190 up down decade counter 74LS190PC 74LS190D 54LS190 74LS190 pins
Text: 190 C O N N E C T IO N D IA G R A M P IN O U T A / 54/74190 •54LS/74LS190 0 | £>o^ P i[T UP/DOW N DECADE COUNTER W ith Preset and R ipple Clock D E S C R IP T IO N — T he '190 is a reve rsib le B C D <8421) d e ca de c o u n te r fe a tu rin g s y n c h ro n o u s c o u n tin g and a syn c h ro n o u s pre se ttin g . T he preset fe a
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54LS/74LS190
54/74LS
Truth Table 74190
74190PC
74190
circuit rc tc
74190 counter
74LS190 up down decade counter
74LS190PC
74LS190D
54LS190
74LS190 pins
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DN851
Abstract: No abstract text available
Text: DN851 J W t] \ — zp 7=f-t'5/5^JL/IC DN851 4 t í "j h JlR iË 2 f ë j j > ^ / 4 B i t R e v e rsib le B in a ry C o u n te r • 1§£ ^ / D e s c r i p t i o n DN851 i±, U nit ! mm j - — i-ìlfejffl £ L T S x f f ? ix Í 2<r lla; li 3<r 1 4<L s 5<i
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DN851
dn85I
DN851
08max.
14-Lead
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Untitled
Abstract: No abstract text available
Text: 623Sb05 D04b572 ETO « S I E G bOE ]> I 7 = - # “0 5 SFH 482201 SIEMENS GaAIAs-LASER DIODE 250 mW SIEMENS AKTIEN6ESELLSCHAF P ackage Dimensions in mm 5.9 11.7 - Laser Mirror , 1 .0 -2 .0 7.0 1. 2. 3. 4. Peltier-Cooler+ NTC NTC Laserdiode Cathode 5. Laserdiode Anode
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623Sb05
D04b572
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k2341
Abstract: fet N-Channel transistor 250V DS NEC k 1995 transistor TC-8070
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The2SK2341 is N-channel Power MOS Field Effect Transis in millimeters to r designed for high voltage sw itching applications.
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2SK2341
The2SK2341
k2341
fet N-Channel transistor 250V DS
NEC k 1995 transistor
TC-8070
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2510 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S K2510 is N-Channel MOS Field Effect T ransistor designed for high current switching applications. FEATURES • Super Low O n-Resistance R d s on 1 = 2 0 m O (V g s = 1 0 V , Id = 2 0
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2SK2510
2SK2510
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2478 SW ITCHING N-CHANNEL POWER M O S FET INDUSTRIAL USE DESCRIPTION The 2SK2478is N-Channel MOS Field E ffe c tT ra n s is to r designed P A C K A G E D IM E N S IO N S in m illimeter fo r hig h v o lta g e s w itc h in g applications,
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2SK2478
2SK2478is
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SG 2368
Abstract: LS 2027 audio amp c 2688 nec LS 2027 amp
Text: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION N E76184A is a N-channel GaAs MES FET housed in ce ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity. Its
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NE76184A
NE76184A
NE76184A-SL
NE76184A-T1
NE76184A-T1A
SG 2368
LS 2027 audio amp
c 2688 nec
LS 2027 amp
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NEC Electronics uPD Series
Abstract: 3BSM capacitor 3J3 xxx3b UPD78083
Text: DATA SHEET MOS INTEGRATED CIRCUIT /iP D 7 8 0 8 1 ,7 8 0 8 2 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The /¿PD78081, 78082 are m em bers o f th e /¿PD78083 su b s e rie s of the 78K /0 se rie s m ic ro c o n tro lle rs . B esides a h ig h -sp e e d , h ig h -p e rfo rm a n ce C PU , th e se m ic ro c o n tro lle rs have o n -ch ip ROM, RAM, I/O ports, 8-bit
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uPD78081
uPD78082
uPD78083
78K/0
PD78P083
NEC Electronics uPD Series
3BSM
capacitor 3J3
xxx3b
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L1213
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2139 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2139 is N -Channel P o w e r MOS Field Effect T ra n s is to r in m illim e te rs d esig ned f o r high v o lta g e s w it c h in g ap p lica tion s.
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2SK2139
2SK2139
MP-45F)
L1213
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low noise FET NEC U
Abstract: ym 238
Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ce ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.
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NE76184B
NE76184B
NE76184B-T1
NE76184B-T1A
low noise FET NEC U
ym 238
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NEC 2505
Abstract: 2sk2372 transistor 2sk 70 2sk2371 transistor 2sk transistor+2sk
Text: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2371/2SK2372 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2371/2SK2372 is N-Charmel MOS Field Effect Transistor PACKAGE DIMENSIONS in millimeters designed fo r high voltage switching applications.
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2SK2371/2SK2372
2SK2371/2SK2372
2SK2367:
2SK2368:
2SK2371/2SK2372)
NEC 2505
2sk2372
transistor 2sk 70
2sk2371
transistor 2sk
transistor+2sk
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ic nec 2501
Abstract: 2SK2483
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2483 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2483 is N-Channel MOS Field Effect T ransistor designed in millimeter for high voltage switching applications. FEATURES
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2SK2483
2SK2483
ic nec 2501
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2sk2486
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2486 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2486is N-Channel MOS Field Effect T ra n s is to r designed PACKAGE D IM E N S IO N S in m illim e te r fo r hig h v o lta g e s w itc h in g applications,
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2SK2486
2SK2486
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CD645 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The M C-4516CD645 is a 16,777,216 words by 64 bits synchronous dynam ic RAM module on which 16 pieces of
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MC-4516CD645
16M-WORD
64-BIT
C-4516CD645
uPD4564841
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ NEC MOS Integrated Circuit /¿PD16715 384 OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64 GRAY SCALES The /¿PD16715 is a source driver for TFT-LCDs capable of dealing with displays with 64 gray scales. Data input is
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PD16715
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LSE -B3
Abstract: No abstract text available
Text: DATA SHEET_ NEC MOS INTEGRATED CIRCUIT ju P D 16602 312-OUTPUT TFT-LCD FULL COLOR DRIVER The /¿PD16602 is a TFT-LCD source driver with full color display capability. It is ideal for 1024 x 768 pixel XGA class high definition displays. The internal circuit consists of 12 channels (4 x 3) of analog input pins, 12 channels of 16-bit shift
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312-OUTPUT
PD16602
16-bit
LSE -B3
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Untitled
Abstract: No abstract text available
Text: bOE D • ô23SbDS 004b57fl 7 1 e! « S I E G SIEMENS 7 - 4 1- 0 $ SFH 483501 40-STRIPE ARRAY SIEMENS AKT IENGESELLSCHAF Package Dimensions in mm 6.7 6.3 2.4 _ 2.0 1. 2. 3. 4. N.C. NTC Thermistor NTC Thermistor Laser Cathode 5. Laser Anode 6. Monitor Diode Anode
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23SbDS
004b57fl
40-STRIPE
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SM6808
Abstract: block diagram of mri MSM6807 MSM6808 MSM6818 MSM74017 SM680
Text: OKI semiconductor M SM 6808/6818 S P L IT F IL T E R LSI FO R MODEM FUN CTIO N IN T H E C E L L U L A R M O B ILE PHONE G E N E R A L D ESCRIPTIO N The M SM 6808 and M SM 6818 perform the split filtering functions in the modem part of the cellular mobile phone.
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MSM6808/6818_
MSM6808
MSM6818
MSM74017,
MSM6808
MSM6S18
SM6808
block diagram of mri
MSM6807
MSM74017
SM680
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MCM2814
Abstract: Mbus master 250 slave circuit YT-45 Motorola MCM2814 256x8 MC6805S2 spi In Circuit Serial Programming MC68HC05C4 MC68HC11
Text: MAY Order this data sheet by MCM2814/D MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA MCM2814 2 5 6 x 8 B IT S E R I A L E E P R O M HCMOS FLOAT NG-GATE TECHNOLOGY) T h e M C M 2814 is a 2048-bit serial electrically e rasab le PROM . D esig n e d fo r h andling data in app licatio ns requiring both non-volatile
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MCM2814/D
MCM2814
256x8
MCM2814
2048-bit
Mbus master 250 slave circuit
YT-45
Motorola MCM2814 256x8
MC6805S2
spi In Circuit Serial Programming
MC68HC05C4
MC68HC11
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