Untitled
Abstract: No abstract text available
Text: Electrolytic Capacitors Radial, standard NEW 134 RLP 5 097 RLP 7 037 RSM 038 RSU Radial Low Profile Radial Standard Miniature Radial Standard Ultra Miniature 044 RSH Radial Low Profile Useful life 1500 h/85˚C 1500 h/85˚C 2500 h/85˚C 2500 h/85˚C Ø ≤ 8mm
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Untitled
Abstract: No abstract text available
Text: Radial, standard Product information Series Useful life 134 RLP 5 097 RLP 7 037 RSM 038 RSU 044 RSH Radial low profile Radial low profile Radial standard miniature Radial standard ultra miniature Radial standard high voltage 1500 h/85 °C 1500 h/85 °C 2500 h/85 °C
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Untitled
Abstract: No abstract text available
Text: 097 RLP 7 www.vishay.com Vishay BCcomponents Aluminum Capacitors Radial Low Profile, 7 mm FEATURES • • • • 038 RSU Fig.0 Component 097 RLP 7 outlines. higher CV-values 7 mm lower height 5 mm 134 RLP 5 Fig. 1 APPLICATIONS • • • • QUICK REFERENCE DATA
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: POWER TYPE 氧化金屬膜電阻器 RSU METAL OXIDE FILM RESISTOR Standard Type 小型氧化金屬膜電阻器 RSS METAL OXIDE FILM RESISTOR (Small Type 超小型氧化金屬膜電阻器 RSP METAL OXIDE FILM RESISTOR (Super Small Type) •結構圖 Construction
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30min)
than100â
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Untitled
Abstract: No abstract text available
Text: POWER TYPE RSU 氧化金屬膜電阻器 RSS 小型氧化金屬膜電阻器 RSP 超小型氧化金屬膜電阻器 METAL OXIDE FILM RESISTOR Standard Type METAL OXIDE FILM RESISTOR (Small Type) METAL OXIDE FILM RESISTOR (Super Small Type) •結構圖 Construction
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30min)
than100Î
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bzx55c 12v
Abstract: rsl2 24v LS 1316 TEA7092 TEA7092TQ TEA7092TQT TEA7540 TQFP44
Text: TEA7092 TELEPHONE ANALOG FRONT END . . . . . . . . SPEECH DC LINE CURRENT RANGE FROM 6 TO 120mA EXTERNALLY ADJUSTABLE : - Tx AND Rx GAIN - MAXIMUM TRANSMIT LEVEL - RETURN LOSS - SIDETONE NETWORKS - Tx AND Rx AGC LINE CURRENT START UP VALUE AND SLOPE SOFTCLIPPING ON Tx CHANNEL
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TEA7092
120mA
TQFP44A
bzx55c 12v
rsl2 24v
LS 1316
TEA7092
TEA7092TQ
TEA7092TQT
TEA7540
TQFP44
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D1816
Abstract: CS4210A
Text: Geode CS4210 IEEE 1394 OHCI Controller General Description Eight isochronous transmit contexts Eight isochronous receive contexts Capable of reading a 128-byte descriptor in one burst 128 byte, zero wait state bursting
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CS4210
CS4210VJG
D1816
CS4210A
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P1394a irmc
Abstract: CS4210A IR 440H AD10 AD27 AD29 AD30 CRC32 CS4103 CS4210
Text: Geode CS4210 IEEE 1394 OHCI Controller General Description The National Semiconductor Geode™ CS4210 is a PCIbased IEEE 1394 OHCI Open Host Controller Interface controller. The CS4210 provides an implementation of the IEEE 1394 Link Layer functionality according to the programming model defined by 1394 OHCI Specification Version 1.0. It supports high speed serial communication up to
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CS4210
CS4103
P1394a irmc
CS4210A
IR 440H
AD10
AD27
AD29
AD30
CRC32
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rsl2 24v
Abstract: BZX55C12V bzx55c 12v uc 4538 TQFP44A isl 8878 uc 8843 TEA7092 BZX55C47V TEA7540
Text: TEA7092 TELEPHONE ANALOG FRONT END . . . . . . . . SPEECH DC LINE CURRENT RANGE FROM 6 TO 120mA EXTERNALLY ADJUSTABLE : - Tx AND Rx GAIN - MAXIMUM TRANSMIT LEVEL - RETURN LOSS - SIDETONE NETWORKS - Tx AND Rx AGC LINE CURRENT START UP VALUE AND SLOPE SOFTCLIPPING ON Tx CHANNEL
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TEA7092
120mA
TQFP44A
PMTQFP44
rsl2 24v
BZX55C12V
bzx55c 12v
uc 4538
isl 8878
uc 8843
TEA7092
BZX55C47V
TEA7540
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wireless mobile charging through microwaves
Abstract: fm transmitter 300m range GSM frequency reuse telephone wires datasheet 12 km fm transmitter DECT base station 2.4 GHz fm based short range wireless communication GSM sectoring antenna mobile battery charging automatic off pstn subscriber interface
Text: corDECT Training Manual Rev. No. 0.01 a corDECT Table of Contents 1. Introduction. 4 1.1 Important Attributes of a WLL system . 4
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25AA20
Abstract: No abstract text available
Text: • Maximum Ratings S ym bol U n it SG 25AA20 SG 25AA30 SG 25AA40 R e p e titive P e a k R e ve rse V oltag e V rru V 200 300 400 500 N o n -R e p e titiv e P e a k R e ve rse V o lta g e V rsu V 240 360 48 0 600 720 R e p e titiv e P e a k O ff-S ta te V oltag e
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25AA20
25AA30
25AA40
SG25AA
53SSE86-09
25AA20
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TT 2146
Abstract: U150C 72wma 54RC-3 25CC 858C C160 dsei 30
Text: • 4bflb2Bb 00D]ib34 733 M I X Y □IXYS DSEI30 IFAV Fast Recovery Epitaxial Diode = 30 A v„„. = 800-1000 V < 50 ns v’ rsu T ype V V 800 B00 D S E I3 0 -0 8 A 1000 1000 D S E I 3 0 *1 0 A S ' « H - 5 Sym bol T e s t c o n d itio n s •fsms T VJ Tc
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0-08A
150CC,
/ys600
TT 2146
U150C
72wma
54RC-3
25CC
858C
C160
dsei 30
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33072
Abstract: 34072 IC 34072 MC35072U MC33074D MC35074L MC35072 PSRI MC34071 MC33071
Text: MC34071,2,4 MC35071,2,4 MC33071,2,4 MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Slew Rate, Wide Bandwidth, Single Supply Operational Amplifiers Quality bipolar fabrication with innovative design concepts are employed for the M C33071/72/74, M C34071/72/74, M C35071/72/74 se rie s of monolithic
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MC34071
MC35071
MC33071
MC33071/72/74,
MC34071/72/74,
MC35071/72/74
12-Bits)
MC34071
MC34071,
33072
34072
IC 34072
MC35072U
MC33074D
MC35074L
MC35072
PSRI
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LT4239
Abstract: LT4217 TO-117A 25CC CD6150 LT423 1533 ie 5
Text: T~S3~0$^ 1 2 E 0 | L 3 i,7 2 S 4 00Ö 72M 0 □ | MOTOROLA • SEM ICO NDUCTO R TECHNICAL DATA MOTOROLA SC XSTRS/R F h h h h h h ih h m h b h M h h _ L T 4217 L T 4239 C D 61 50 The RF Line N P N S ilic o n H ig h F requ en cy T ra n sisto rs |£ = 400 m A
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IS21I2
CD6150
LT4239
LT4217
TO-117A
25CC
LT423
1533 ie 5
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transistor tic 106 N
Abstract: bly power transistor transistor tic 226 transistor SE 431
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA D e sig n e r’s Data Sheet M GW 1 2 N 1 2 0 D Insulated G ate Bipolar Transistor with Anti-Parallel Diode Motorola Prafarrad Davlca N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO -247 12 A @ 90 C 20 A @ 25 C
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MRF586
Abstract: F587 033 motorola MRF587
Text: MOTOROLA SEMICONDUCTOR MRF586 MRF587 TECHNICAL DATA The RF Line N P N S ILIC O N H IG H FR E Q U E N C Y T R A N S IS T O R S . . designed for use in high-gain, low-noise, ultra-linear, tuned and wideband amplifiers Ideal for use in CATV, MATV, and instrumen
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MRF586
MRF587
T1111
F587
033 motorola
MRF587
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mps1983
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR MPS901 MPS1983 TECHNICAL DATA T h e R F L in e 1C = 3 0 m A HIGH FREQUENCY TRANSISTORS N P N S IL IC O N H IG H - F R E Q U E N C Y T R A N S IS T O R NPN SILICION . . . designed prim arily for use in high-gain, low-noise small-signal
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MPS901
MPS1983
MRF901
mps1983
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BF431L
Abstract: MRF9011 MRF9011L IC 21069 tuner LG BF431 C 318B 725M SF-11N
Text: 12E D I b3fc.725M MOTORCLA MOTOROLA SC DGÖÖCm XSTRS/R Ü | T^ Ì/"/7 F S E M IC O N D U C T O R TECHNICAL DATA M RF9011 BF431* M RF9011L B F431L* The RF Line N P N S ilic o n H igh -F re q u e n c y T r a n s isto rs ‘ European Part N u m b e rs . . . d esign ed prim arily for use in high-gain, low -noise sm all-sign al am plifiers for
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OT-143
MRF9011)
MRF9011L)
BF431L
MRF9011
MRF9011L
IC 21069
tuner LG
BF431
C 318B
725M
SF-11N
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1n53338
Abstract: 1N53888 2SC 930 AF 1NS339B 1N6360B Zener diode wz 210 1N5333B 1N5334B 1N5335B 1N5336B
Text: 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac teristics that reflect the superior capabilities of silicon-oxide-passivated junctions. All this in an axlal-lead, transfer-molded plastic package offering protection In all common environ
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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2N6370
Abstract: MRF-410A RF410A mrf410 vk200.10 MRF410A
Text: 12E D I b3b75S4 GGa7Ì.57 5 | MO TOROLA SC MOTOROLA XSTRS /R F T - 33 S E M IC O N D U C T O R TECHNICAL DATA M RF410 M RF410A The RF Line N P N S ilic o n RF P o w e r T ra n sisto rs 10 W -30 MHz RF POWER TRANSISTORS NPN SILICON . designed for high gain driver and output linear amplifier stages in 1.5 to 30 M Hz
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b3b75S4
RF410
RF410A
2N6370
MRF410,
MRF410A
2N6370
MRF-410A
RF410A
mrf410
vk200.10
MRF410A
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MRF162
Abstract: motorola TE 901 Triode rs 733 P011t
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF162 The RF MOSFET Line 15 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -4 0 0 M H z N-CHANNEL MOS BROADBAND RF POWER d e s ig n e d fo r w id e b a n d la rg e -s ig n a l o u tp u t and d riv e r a p p lic a
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MRF162
MRF162,
MRF162
AN-215A
motorola TE 901
Triode rs 733
P011t
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MRF148
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 30 W 2 .0 -1 7 6 M H z N-CHANNEL MOS LINEAR RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . d esigned for pow er am plifier applications in industrial, c o m m e r cial and am ateur radio equipm ent to 1 75 MHz.
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V 518 J19
Abstract: j6812 MRF837 transistor j147 J-6812
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF837 The RF Line 750 m W NPN SILICON RF LOW POWER TRANSISTOR . d e sign e d prim arily for w ide b and large s ign al predriver stage s in 800 M H z an d U H F frequency ranges. 870 M H z RF LOW POWER TRANSISTOR
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MRF837
Continu775
V 518 J19
j6812
MRF837
transistor j147
J-6812
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