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OMRON Corporation RT6-0109001 - Bulk (Alt: RT6-0109001)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RT6-0109001	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
OMRON Corporation RT6-0109021 - Bulk (Alt: RT6-0109021)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RT6-0109021	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
OMRON Corporation RT6-0107011 - Bulk (Alt: RT6-0107011)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RT6-0107011	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
OMRON Corporation RT6-0109011 - Bulk (Alt: RT6-0109011)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RT6-0109011	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
OMRON Corporation RT6-0107001 - Bulk (Alt: RT6-0107001)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RT6-0107001	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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RT6010 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RT6010 Abstract: 10uF 450v tv CAPACITOR sp-D132 RT6010GS Text: RT6010 Dual Channel High Efficiency and High Accuracy Average Current Control LED Backlight Buck Controller General Description Features The RT6010 is a dual channel high accuracy average current control LED backlight buck controller for 2 LED strings w/	Original	PDF	RT6010 RT6010 DS6010-00 10uF 450v tv CAPACITOR sp-D132 RT6010GS
rt6010 Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B MDS140L 25-mils J345 1030 PULSED 32uS MODE-S Text: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The	Original	PDF	MDS140L MDS140L rt6010 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B 25-mils J345 1030 PULSED 32uS MODE-S
transistor GaN Abstract: No abstract text available Text: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features Rev. V3 MAGX-000035-010000 Flanged • GaN Depletion-Mode HEMT Microwave Transistor  Common-Source configuration  No internal matching	Original	PDF	MAGX-000035-010000 MAGX-000035-01000S MAGX-000035-01000X transistor GaN
N48 transistor Abstract: No abstract text available Text: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The	Original	PDF	MDS140L MDS140L N48 transistor
Untitled Abstract: No abstract text available Text: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The	Original	PDF	MDS140L MDS140L
rt6010 Abstract: J555 Text: 3134-100R1 3134-100 100 Watts, 36 Volts, 100µs, 10% Radar 3100-3400 MHz GENERAL DESCRIPTION CASE OUTLINE 55KS-1 Common Base The 3134-100 is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 100µõ	Original	PDF	3134-100R1 55KS-1 rt6010 J555