DS-LM3S6965
Abstract: LM3S6965 MR24
Text: P RE LIMIN A RY LM3S6965 Microcontroller D ATA SHE E T D S -LM3S 6965 - 1 9 7 2 C o p yri g h t 2 0 0 7 L u mi n a ry Mi cro, Inc. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE, EXPRESS OR
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LM3S6965
32-bit
16-bit
DS-LM3S6965
MR24
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LT1086
Abstract: No abstract text available
Text: LT1086MIG–05 LT1086MIG–05 LT1086MIG–12 MILITARY VERSION PR EL IM INA RY LOW DROPOUT 1.5 AMP POSITIVE VOLTAGE REGULATOR TO–257AA Isolated Metal Package 4.83 0.190 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) FEATURES 10.41 (0.410)
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LT1086MIG
257AA
LT1086
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VDB50
Abstract: No abstract text available
Text: PR EL IM INA RY TetraFET D1011UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss
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D1011UK-P
VDB50
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Untitled
Abstract: No abstract text available
Text: PR EL IM INA RY TetraFET D1211UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss
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D1211UK-P
500MHz
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D2019
Abstract: No abstract text available
Text: PR EL IM INA RY TetraFET D2019UK-p METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss
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D2019UK-p
D2019
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LM1086 12v
Abstract: LM1086
Text: LM1086–220M–05 LM1086–05–220M LM1086–12–220M SEME LAB MILITARY VERSION PR EL IM INA RY LOW DROPOUT 1.5 AMP POSITIVE VOLTAGE REGULATOR TO–220 Isolated Metal Package 4.70 5.00 0.70 0.90 FEATURES 3.56 Dia. 3.81 10.41 10.92 13.39 13.64 16.38 16.89
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LM1086
LM1086 12v
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15A Adjustable Positive Voltage Regulator
Abstract: LT1086-12/LT1086H
Text: LT1086–220M–05 LT1086–05–220M LT1086–12–220M SEME LAB MILITARY VERSION PR EL IM INA RY LOW DROPOUT 1.5 AMP POSITIVE VOLTAGE REGULATOR TO–220 Isolated Metal Package 4.70 5.00 0.70 0.90 FEATURES 3.56 Dia. 3.81 10.41 10.92 13.39 13.64 16.38 16.89
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LT1086
LT1086-05-220M
LT1086-220M
LT1086SMD
LT1086SMD05
15A Adjustable Positive Voltage Regulator
LT1086-12/LT1086H
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D2220
Abstract: No abstract text available
Text: PR EL IM INA RY TetraFET D2220UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss
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D2220UK-P
D2220
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d2219uk
Abstract: No abstract text available
Text: PR EL IM INA RY TetraFET D2219UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss
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D2219UK-P
d2219uk
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D2020UK
Abstract: No abstract text available
Text: PR EL IM INA RY TetraFET D2020UK–P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss
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D2020UK
55GSS
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LT1086-12
Abstract: 12V 5A adjustable regulator LT1086
Text: LT1086–220M–05 LT1086–05–220M LT1086–12–220M SEME LAB MILITARY VERSION PR EL IM INA RY LOW DROPOUT 1.5 AMP POSITIVE VOLTAGE REGULATOR TO–220 Isolated Metal Package 4.70 5.00 0.70 0.90 FEATURES 3.56 Dia. 3.81 10.41 10.92 13.39 13.64 16.38 16.89
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LT1086
LT1086-12
12V 5A adjustable regulator
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Untitled
Abstract: No abstract text available
Text: LM1086–220M–05 LM1086–05–220M LM1086–12–220M S EM E LA B MILITARY VERSION PR EL IM INA RY LOW DROPOUT 1.5 AMP POSITIVE VOLTAGE REGULATOR TO–220 Isolated Metal Package 4.70 5.00 0.70 0.90 FEATURES 3.56 Dia. 3.81 10.41 10.92 13.39 13.64 16.38 16.89
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LM1086â
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Untitled
Abstract: No abstract text available
Text: v3.0 CorePCI Target 33/66 MHz Pr od u c t S u mm a ry Version Intended Use This data sheet defines the functionality of Version 5.1 of the CorePCI macro. • High-Performance PCI Target Applications – 32/64-Bit, 66MHz, 3.3V Section – 32/64-Bit, 33MHz, 5V or 3.3V
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32/64-Bit,
66MHz,
33MHz,
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7524 Core Memory Sense Amplifier
Abstract: 75233 D 7520 C diagram an 7520 7520 ta 5520
Text: FAIRCHILD LINEAR INTEGRATED CIRCUITS • 5520/7520 SERIES 11-101 5520/7520 SERIES CORE MEMORY SENSE AMPLIFIERS FAIRCHILD LINEAR INTEGRATED C IR CU ITS G E N E R A L D E S C R IP T IO N — T h e 5 5 2 0 /7 5 2 0 Series D ual M e m o ry Sense A m p lifie rs are designed f o r use in high speed core m e m o ry systems. These
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54ABT125
Abstract: 54*125
Text: P hilips Sem iconductors M ilita ry Advanced BiCMOS P roducts P roduct specification Quad buffer 3-State FEATURES 54ABT125 • ESD protection exceeds 2000V per MIL STD 883 Method 3015 and 200V per Machine Model • Quad bus interface • 3-State buffers
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54ABT125
48mA/-24mA
500mA
54ABT125
500ns
54*125
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MC34063 step-down
Abstract: dc-dc mc34063 Step-Down, External PNP Saturated Switch 12 v to 5 v MC34063 MC34063 DIP mc34063 constant current seme lab mc34063 equivalent
Text: IP35063 IP33063 IP34063 S E M E LAB DC-DC CONVERTER CONTROL CIRCUIT TOP VIEW SWITCH COLLECTOR -rn ^ nr ^ SWITCH EMITTER ry TIMING CAPACITOR nr [A DRIVER COLLECTOR FEATURES ] ^pk SENSE I V CC • Low Standby Current COMPARATOR INVERTING INPUT • Current Limiting
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IP35063
IP33063
IP34063
100Hz
100kHz
MC34063/MC34063A
IP34063
MC34063 step-down
dc-dc mc34063
Step-Down, External PNP Saturated Switch
12 v to 5 v MC34063
MC34063 DIP
mc34063 constant current
seme lab
mc34063 equivalent
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54ABT125
Abstract: No abstract text available
Text: P hilips Sem iconductors M ilita ry Advanced BiCMOS P roducts P roduct specification Quad buffer 3-State FEATURES 54ABT125 • ESD protection exceeds 2000V per MIL STD 883 Method 3015 and 200V per Machine Model • Quad bus interface • 3-State buffers
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54ABT125
48mA/-24mA
500mA
54ABT125
DESIGNATOABT125
500ns
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a81s
Abstract: 80C51 83C552 87C552
Text: P hilips Sem iconductors M ilita ry M icroco n tro lle r P roducts P roduct specification Single-chip 8-bit EPROM microcontroller with 10-bit A/D, capture compare timer, high-speed outputs, PWM CFEATURES 87C552 PIN CONFIGURATION • 80C51 central processing unit
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10-bit
87C552
80C51
16-bit
7110a2b
711DflSb
a81s
83C552
87C552
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CSM 6850
Abstract: mg80960xa 80960XA BV EI 303 3628 80960CA 80960KA 80960KB 80960MC M8259A 77106
Text: 80960XA EMBEDDED 32-BIT MICROPROCESSOR WITH 33RD TAG BIT TO SUPPORT OBJECT-ORIENTED PROGRAMMING AND DATA SECURITY M ilita ry • Implements JIAWG 32-Bit ISA Standard ■ High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS* Sustained Execution at
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80960XA
32-BIT
80-Bit
CG/SALE/101789
CSM 6850
mg80960xa
80960XA
BV EI 303 3628
80960CA
80960KA
80960KB
80960MC
M8259A
77106
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d 4464 c
Abstract: No abstract text available
Text: 552 EHSemiconductor National 54F/74F552 Octal Registered Transceiver with Parity and Flags General Description T h e 'F552 octa l transceiver co ntains tw o 8-bit registers fo r te m p o ra ry storage o f data flow ing in e ithe r direction. Each register has its own clo ck pulse and clo ck enable input as
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54F/74F552
d 4464 c
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MQ80960MC
Abstract: LADT4 MQ80960MC-25/B MG80960MC 80960MC MQ80960MC-20/B DIODE 255 KO Intel 80960kb programmers reference LA01 80960KA
Text: in te i 80960M C EMBEDDED 32-BIT MICROPROCESSOR WITH INTEGRATED FLOATING-POINT UNIT AND MEMORY MANAGEMENT UNIT M ilita ry High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS* Sustained Execution at 25 MHz On-Chip Floating-Point Unit
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80960MC
32-BIT
80-Bit
512-Byte
MQ80960MC
LADT4
MQ80960MC-25/B
MG80960MC
80960MC
MQ80960MC-20/B
DIODE 255 KO
Intel 80960kb programmers reference
LA01
80960KA
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intel 8051 timing characteristics
Abstract: 2001 NVRAM 18-PIN SC22100CN SC22101 Micron TLC intel 8185
Text: SIERRA SEMICONDUCTOR High Endurance Electrically Erasable, Prog. Memories The SC22100 is a 32 by 8 256-bit , 5-Volt programmable non-volatile, parallel access mem ory built with S ierra's p ro p rieta ry 2 m icron CMOS floating gate process. Data and address lines are multiplexed,
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SC22100
SC22100
256-bit)
18-pin
16-bit
intel 8051 timing characteristics
2001 NVRAM
SC22100CN
SC22101
Micron TLC
intel 8185
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E138034
Abstract: bdx 540 bdx 538 UL444 NS100N BDX 71 0 261 230 134 bdx 545 BDX 58
Text: @ RELEÁáH IS UWPUBU5HBB. COPYRIGHT 19 BY AMP m P-UBUóÁTIÓkl- TFT LOC - ALL RIfiHTS RESERVED. INCORPORATED. DI5T REVISIONS EH CA T EG D RY 5e PERFORMANCE C H A R A C TE R IS TIC S FREQUENCY ATTENUATION MHz) D (dB/lOOn) MAXIMUM NEXT PSNEXT
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ns/100n)
10AUG99
E138034
24AWG
24AWG,
23FEB95
02MAR01
omp20305
bdx 540
bdx 538
UL444
NS100N
BDX 71
0 261 230 134
bdx 545
BDX 58
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relay driver
Abstract: 2wire 4wire telephone
Text: HC-5524 Semiconductor F e b ru a ry 1999 D a ta S h e e t F ile N u m b e r 2 7 9 8 .6 Features EIA/ITU 24V PABX SLIC with 25mA Loop Feed • Dl Monolithic High Voltage Process The HC-5524 telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions on a monolithic
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HC-5524
HC-5524
AN9607,
AN9628,
AN9608,
AN549,
HC-5502S/4X
HC4P5524-9
HC9P5524-5
1-800-4-HARRIS
relay driver
2wire 4wire telephone
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