Untitled
Abstract: No abstract text available
Text: MPS-343717-02 3400 to 3700 MHz Linear Amplifier Preliminary Data Sheet Features: MP S-3 437 45 dBm IP3 12.5 dB Gain +28.5 dBm P1dB 170 Single Positive Bias Leadless Surface Mount Package 2 The MPS-343717-02 is a low cost high linearity modular amplifier designed to meet the
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MPS-343717-02
MPS-343717-02
CDMA2000,
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Untitled
Abstract: No abstract text available
Text: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Tiva TM4C129CNCPDT Microcontroller D ATA SHE E T D S -T M 4C 129C NCP DT - 1 5 6 3 8 . 2 7 11 S P M S 437 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2013 Texas Instruments Incorporated. Tiva and TivaWare are trademarks of Texas Instruments Incorporated. ARM and Thumb are
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TM4C129CNCPDT
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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493a2s
Abstract: NTE5844 NTE584 10 AMP 1200V RECTIFIER DIODE NTE5845 NTE5912 NTE5933 NF-2A
Text: NTE5844 & NTE5845, NTE5912 thru NTE5933 Silicon Power Rectifier Diode 20 Amp, DO4 Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.
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NTE5844
NTE5845,
NTE5912
NTE5933
NTE5844,
NTE5933
493a2s
NTE5844
NTE584
10 AMP 1200V RECTIFIER DIODE
NTE5845
NF-2A
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NTE5912
Abstract: NTE584 NTE5844 NTE5845 NTE5933
Text: NTE5844 & NTE5845, NTE5912 thru NTE5933 Silicon Power Rectifier Diode, 20 Amp Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.
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NTE5844
NTE5845,
NTE5912
NTE5933
NTE5844,
NTE5933
NTE584
NTE5844
NTE5845
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JANTX1N5518B-1
Abstract: ZENER 1N5 Datasheet 1N5518 1N5518B 1N5546 1N5546B-1 DO-204AH DO-213AA JANTX1N5518BUR-1 JANTXV1N5546D-1
Text: 1N5518B thru 1N5546B-1 DO-35 Low Voltage Avalanche Diodes DO-35 SCOTTSDALE DIVISION APPEARANCE The 1N5518 thru 1N5546 series of 0.5 watt Zener Voltage Regulators provides a selection from 3.3 to 33 volts in standard 5% tolerances as well as tighter tolerances identified by different suffix letters on the part number.
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1N5518B
1N5546B-1
DO-35
1N5518
1N5546
DO-35
MIL-PRF-19500/437.
DO-204AH)
JANTX1N5518B-1
ZENER 1N5 Datasheet
DO-204AH
DO-213AA
JANTX1N5518BUR-1
JANTXV1N5546D-1
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ZENER DIODE 437
Abstract: ZENER 1N5 Datasheet 1N5518 1N5518B 1N5546 1N5546B-1 DO-204AH DO-213AA JANTX1N5518B-1 JANTX1N5518BUR-1
Text: 1N5518B thru 1N5546B-1 DO-35 Low Voltage Avalanche 500 mW Zener Diodes DO-35 SCOTTSDALE DIVISION APPEARANCE The 1N5518 thru 1N5546 series of 0.5 watt Zener Voltage Regulators provides a selection from 3.3 to 33 volts in standard 5% tolerances as well as tighter tolerances identified by different suffix letters on the part number.
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1N5518B
1N5546B-1
DO-35
1N5518
1N5546
DO-35
MIL-PRF-19500/437.
DO-204AH)
ZENER DIODE 437
ZENER 1N5 Datasheet
DO-204AH
DO-213AA
JANTX1N5518B-1
JANTX1N5518BUR-1
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MIL-prf-19500/437
Abstract: 1N5523 DO7 ZENER DIODE 437 DO-213AA izl diode marking n55 1N5518 1N5518B 1N5526 DO7 1N5546B
Text: 1N5518B thru 1N5546B-1 DO-7 Low Voltage Avalanche 500 mW Zener Diodes DO-7 SCOTTSDALE DIVISION APPEARANCE The 1N5518B thru 1N5546B series of 0.5 watt Zener Voltage Regulators provides a selection from 3.3 to 33 volts in standard 5% tolerances as well as tighter tolerances identified by different suffix letters on the part number. The
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1N5518B
1N5546B-1
1N5546B
DO-35
MIL-PRF-19500/437.
1N5518B-1N5546B-1,
MIL-prf-19500/437
1N5523 DO7
ZENER DIODE 437
DO-213AA
izl diode
marking n55
1N5518
1N5526 DO7
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zener diode, zl 33
Abstract: No abstract text available
Text: 1N5518BUR-1 thru 1N5546BUR-1 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV Low Voltage Avalanche 500 mW Zener Diodes Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface mount Zener voltage
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1N5518BUR-1
1N5546BUR-1
MIL-PRF-19500/437
1N5546BUR-1
T4-LDS-0037,
zener diode, zl 33
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BUK437-500A
Abstract: BUK437-500B
Text: N AflER PHILIPS/DISCRETE 25E D • ^53131 00E03S0 fi ■ P o w erM O S tra n s is to r B U K 437-500A BU K 437-500B T - s 7 - 15- GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK437-500A
BUK437-500B
BUK437
-500A
-500B
OT-93;
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BUK437-600B
Abstract: BUK437 BUK437-600A Trt-100 t34 transistor IE-07 T34 diode
Text: N AMER P H I L I P S / D I S C R E T E 2SE bbS3T31 0D2032S D 7 B U K 437-600A B U K 437-600B P ow erM O S tra n s isto r T - S * ? - ]S GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbS3T31
0D2032S
BUK437-600A
BUK437-600B
BUK437
-600A
-600B
OT-93;
Trt-100
t34 transistor
IE-07
T34 diode
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BUK437-500A
Abstract: 0020325 BUK437-500B
Text: N AflER PHILIPS/DISCRETE 25E D ^53131 0 0 E0 3 E0 fi B U K 437-500A BU K 437-500B P o w erM O S tra n s isto r I ¿ 7 -1 5 - GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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00E03E0
BUK437-500A
BUK437-500B
BUK437
-500A
-500B
OT-93;
0020325
BUK437-500B
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbSBT31 0030310 S • SSE D B U K 437-400A B U K 437-400B P o w e rM O S tra n s is to r T -3 7 -/5 T G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbSBT31
37-400A
437-400B
BUK437
-400A
-400B
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Untitled
Abstract: No abstract text available
Text: SSE D N AMER PHI LIP S/ DIS CR ET E ^53131 0020320 fl B U K 437-500A B U K 437-500B P o w e rM O S tra n s is to r T ~ 3 7 ” 15- G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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37-500A
437-500B
BUK437
-500A
-500B
0D20324
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TBA 150A
Abstract: TBA+150A
Text: 37bflSS2 0Ü1ÖS13 437 IPLSB GEC P LE S S E Y S E M I C O N D U C T O R S DC1870 Series PLANAR DOPED BARRIER WAVEGUIDE MIXER DIODES Planar doped barrier PDB waveguide mixer diodes represent a major advancement in mixer/detector technology. These diodes offer good conversion loss at tow local oscillator
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37bflSS2
DC1870
100jiA
37bflS22
DC1870
DC1871
DC1874
375GHz
200C2
TBA 150A
TBA+150A
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SENSYM sx150
Abstract: SENSYM SX100D SenSym SX15D SX100 LM324 rtd with wheatstone bridge- temperature sensor SX15 AT-2150 SX30AN Wheatstone Bridge amplifier
Text: SENSYM INC b5E D 3 4 ^ 7 3 7 00G23EE 437 SenSym s x i 5, SX30, s x i 00, s x i 50 0 to 15 psi and 0 to 150 psi PRESSURE SENSORS FEATURES GENERAL DESCRIPTION • High Impedance Bridge • Absolute and Differential Gage Devices The SX Series of pressure sensors
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00G23EE
sxi00,
SX15A
SX15AN
SX15AHO
SX15AN2
SX15AP1
SX15AD1,
SX30AN
SX30AHO
SENSYM sx150
SENSYM SX100D
SenSym SX15D
SX100
LM324
rtd with wheatstone bridge- temperature sensor
SX15
AT-2150
Wheatstone Bridge amplifier
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DIODE SJ 98
Abstract: BUK437-450B
Text: N AMER P H I L I P S / D I S C R E T E 5SE D •I fabSBTai 0050B1S M PowerMOS transistor B U K 437-450B T -3^ -15* GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK437-450B
OT-93;
DIODE SJ 98
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1025R
Abstract: No abstract text available
Text: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-437 G 8th. Edition Features • Low on-resistance • Capable o f 2.5 V gate drive • Low drive current • High density mounting Outline S O P -8 7 8 D D 5 6 OD o o QJ ô
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HAT1025R
ADE-208-437
1025R
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RS-397
Abstract: T500 TR07 t507
Text: Fast Switching RMS Up to 1 4 0 0 Volts 1 0 -5 0 fjs T 5 0 7 - _70 Conform s to T O -8 3 O u tlin e Conform s to T O -9 4 O utline Sym bol' A A, B $D E F J M N Q <*>T Z <*>W Inches Min. 5.775 6.850 .055 .860 1.031 .255 2.50 .437 .796 .260 .250 Max. 6.265 7.500
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y2-20
00A/usec)
RS-397
T500
TR07
t507
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Untitled
Abstract: No abstract text available
Text: SIE D • Ôl3bb71 QD03bSÖ 437 m S E K G SEMIKRON IN<T~ SEMIKRON Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj, Tstg Visol humidity climate Values Units 800 800 20 80 ±20 400 - 5 5 . . .+150 2 500 Class F 55/150/56 V V A A V W °C V 20 80
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l3bb71
QD03bSÃ
13bb71
0Q03b31
T-39-27
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smd marking s13
Abstract: SMD 437 diode SMD Code s13 smd code marking TV sot23 S13 SMD marking CODE S13 code S13 marking code SMD smd diode marking code smd marking codes
Text: bbSa^M b3E DD7M277 437 « S I C 3 BBY42 NAPC/PHILIPS SEMICONP FOR D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE O F H A N D B O O K SC01 O R D A T A S H E E T V.H.F. VARIABLE CAPACITANCE DIODE The B B Y 42 is a variable capacitance d iode in a m icro m in ia tu re plastic envelope SO T-23. I t is intended
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DD7M277
BBY42
BBY42
OT-23.
smd marking s13
SMD 437 diode
SMD Code s13
smd code marking TV sot23
S13 SMD
marking CODE S13
code S13
marking code SMD
smd diode marking code
smd marking codes
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HSMP3811
Abstract: sot-23 MARKING CODE G1 HSMP3821 HSMP-3801 HSMP3831 HSMP3881 HSMP-3811 hsmp-3831 hsmp3801 HSMP-3881
Text: Surface Mount PIN Diodes Available Configurations SOT-23 DIE APPLICATION GUSS SINGLE SINGLE SERIES COMMON ANODE b R B / o HPNWXJ01 HPND-0002 HPND-0003 5082-0012 tr 'a S' X - ll XX ht-ir là ' COMMON CATHODE LOW LOW INDUCTANCE INDUCTANCE B a Il XX '- á -Ir 1
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OT-23
HPNWXJ01
HSMP-3802
HSMP-3812
HSMP-3800
HSMP-3801
HSMP-3810
HSMP-3811
HSMP-3820
HSMP-3821
HSMP3811
sot-23 MARKING CODE G1
HSMP3821
HSMP3831
HSMP3881
hsmp-3831
hsmp3801
HSMP-3881
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SMD 437 diode
Abstract: BKC Semiconductors DSAIH0002562 0000b32
Text: MINI-MELF-SMD LL4153 Applications II] Silicon Diode Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TXJ TXV and S level per
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LL4153
MIL-S-19500/437
LL-34/35
DO-35
Mil-S-19500
DO-213AA)
4031-B
1N4153UR-1
DO-213AA
SMD 437 diode
BKC Semiconductors
DSAIH0002562
0000b32
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ecg rectifier diode
Abstract: ECG 558 ECG diodes diode ecg 588 ECG555A 110MP
Text: Microwave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IMPED. 0 3 0 MHz (Ohms) VSWR Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060
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1N415C
1N415E
1N416C
1N416E
ECG553
ECG566A
ECG571
ECG616A
Z13-2
DO-92
ecg rectifier diode
ECG 558
ECG diodes
diode ecg 588
ECG555A
110MP
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