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TE Connectivity 63445-2 Crimpers / Crimping Tools FAST RCPT 18-12 Reel of 4000
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	63445-2		84,000			1 - 10 - 100 - 1000 - 10000 $0.114	Buy Now
TE Connectivity 63442-1 Terminals 250 POS LOCK REC Reel of 6000
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	63442-1		12,000			1 - 10 - 100 - 1000 - 10000 $0.112	Buy Now
	63442-1		5,700			1 - 10 - 100 $0.176 1000 $0.176 10000 $0.176	Buy Now
Amphenol Corporation GSB4116344HR USB Connectors USB 3.1 GEN2 STD A RECP UPRIGHT DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	GSB4116344HR		4,123			1 $1.93 10 $1.58 100 $1.49 1000 $1.01 10000 $1.01	Buy Now
Texas Instruments LM63440AFSQRYFRQ1 Switching Voltage Regulators Automotive, 3V to 36V, 4A low-EMI synchronous buck converter with pin-adjustable switching frequency
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	LM63440AFSQRYFRQ1		3,000			1 $5.21 10 $4.68 100 $3.84 1000 $2.75 10000 $2.44	Buy Now
Texas Instruments LM63440AASQRYFRQ1 Switching Voltage Regulators Automotive, 3V to 36V, 4A low-EMI synchronous buck converter with pin-adjustable switching frequency
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	LM63440AASQRYFRQ1		3,000			1 $5.21 10 $4.68 100 $3.84 1000 $2.75 10000 $2.44	Buy Now

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S 6344 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
S6344F		Toshiba	Integrated Circuits for TV Systems		Scan	PDF
S6344G		Toshiba	Integrated Circuits for TV Systems		Scan	PDF

S 6344 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
190721 Abstract: No abstract text available Text: 2 : Asse m b ly M a t e r ia l E \| 2_3 2 .2 M isce lla n e ou s Scr e w s E \| 2_5 2 .3 Ea r t h in g Scr e w s E \| 2_7 2 .4 Se lf- Ta ppin g Scr e w s E \| 2_8 2 .5 PT Scr e w s E \| 2_8 2 .6 Sh e e t M e t a l Scr e w s E \| 2_8 2 .7 Th r e a de d Bolt s E \| 2_8	Original	PDF
Untitled Abstract: No abstract text available Text: AN6340, AN6344 e 5 * * 8 3 IC AN6340/AN 6344 V T R v ' l > $ )" — ^ ^ J ^ I U S S / V T R Cylinder S e r v o Control C ircuit H ^ / D e s c r ip t io n AN 6340, AN 6344 !±, VTR n ->U > I ^ co ^ 1 * # ^ / F e a tu re s • AN 6340, AN 6344 £-if L T i > J	OCR Scan	PDF	AN6340, AN6344 AN6340/AN recording/play13 360Hz AN6340/AN6344
diode T74A Abstract: No abstract text available Text: 3.3V C M O S A D D R E S S BUF F E R IDT74ALVCH1 6344 IDT74ALVCH1 62344 ADVANCE INFORMATION FE ATURES: DESCRIPTION: • C o m m o n feat ures: This device is a 1:4 address line driver built using advanced dual metal CMOS technology. This high-speed, low-power	OCR Scan	PDF	IDT74ALVCH1 16x344 ALVCH16344 diode T74A
2SJ328 Abstract: 2SJ328-Z J0502 Text: NEC M O S ^ l # ^ l / \ “7 - M O S F E T M O S Field Effect P ow e r Transistors 2SJ328,2SJ328-Z P ^ q U U /N ^ - M x 2 S J 3 2 8 1 ÎP 5 1 + J U W -M O S FETT * O S F E T i f f i m tt : m m ) > S S * ' i''{6 < X -f •> Y 7 ? - E lï# ^ D C - D C = l> /S - ^ iC Â T !- r o £ £ ,	OCR Scan	PDF	2SJ328 2SJ328-Z 2SJ328ttP? bT2SJ3291f IEI-620) 2SJ328 2SJ328-Z J0502
str w 6556 equivalent Abstract: str x 6556 tv power supply str 6556 str w 6556 IM6523 str w 6556 a ICL7103ACPI str 6556 ICL7103A intersil im6100 Text: H O S s a o o H d o a o iiA i XiaSISOlAID 00I9WI TISHäLNI CONTENTS I n t r o d u c t i o n . 2 S e c tio n I: In te rs il I M 6 1 0 0 C M O S 1 2 - B it M ic ro p ro c e s s o r	OCR Scan	PDF	IM6100 12-Bit str w 6556 equivalent str x 6556 tv power supply str 6556 str w 6556 IM6523 str w 6556 a ICL7103ACPI str 6556 ICL7103A intersil im6100
082D JRC Abstract: shicoh b7 shicoh n7 jrc 082d AAJFF nec 1441 SFH 910 SFH 910 235 scr ky 202 45-65Hz Text: ^ _ 5 7 - . N E C ,r M O S S f[U B & M O S Integrateci Circuit mPD17062 P L U lî Æ & S 'V 'b - t M If, 4 fcf y h * 7 □ V > f ^ p a y 4 1* "/ \ - m m w - , s i a s t g , s s w t - 7 h t x K •7 ° n i r 7 - v r ^ i c - f l > P h n -v F * g U - 7 • 3 y b p - 7 ^ , P L L ^ ]ffi& '> > "fe -,t ' f - <f £ l f 7	OCR Scan	PDF	uPD17062 PD17062Ì 082D JRC shicoh b7 shicoh n7 jrc 082d AAJFF nec 1441 SFH 910 SFH 910 235 scr ky 202 45-65Hz
2SB1116 Abstract: 2SD1616 2SD1616A PA33 Text: NEC l i r / \ T X J , S ilic o n 2 N P N l S J f2 '> U □ > D h ^ 1 6 1 6 , 1 T r a n s is t o r s 6 1 6 A ^ NPN Silicon Epitaxial T ra n s is to r Audio Frequency Pow er A m p lifie r M edium Speed S w itching ^ /F E A T U R E S * H B @ /P A C K A G E DIMENSIONS	OCR Scan	PDF	2SD1616 2SB1116, 2SD1616A PWS10 CycleS50 2SB1116 2SD1616A PA33
S72 FET Abstract: 2SK1664 rh10 261717 Text: ^ - 5> • 5/— h M o s M O S F ie ld E ffe c t P o w e r T r a n s is to r 2 S K 1664 N f^ J l//x 9 -M O S FET i i f f l V^T >ÌSÌ/L < , x ^ y f > 7 W m lSix TU' , it jg X -i -yf- > rmu, DC — DC a >✓-?- ? C i i f t o 2SK1664 i±, N ^ ; i 4 I S ' ' o,7 - M 0 S F E T	OCR Scan	PDF	2SK1664 2SK1664 S72 FET rh10 261717
k1506 Abstract: 2SK785 TL08 015 T460 TC-6200 S0532 Text: M O S Field E ffe c t P o w e r T ra n s is to r N f t ^ ^ '° 7 - M O S FET I i f f l 2SK785 i, > F i^ -7 -M O S F E T • f fiit o H S < , , ^ 7 f > i'f J f é H r * * s (W -ÎÎL ! mm >3 . 2 + 0 . 2 , 4 . 7 MAX. 15.7 MAX. DODC 3 1.5 ? (c g iS T 'tc W	OCR Scan	PDF	2SK785 k1506 TL08 015 T460 TC-6200 S0532
j329 Abstract: transistor sb 772 TRANSISTOR b 772 p jft 1411 2SJ329 GI 242 F108 diode diode lt 0236 F108 NEC 2415 Text: M 0 S J F ^ f M ^ / \ Or7 - M O S FET M O S Field Effect P ow er Transistor P ^ ^ t ^ l / / \ o7 - M 0 S I 2 S J 3 2 9 Ü P ? + ^ ;U / \ “ 7 - M 0 S F E T Ü F E T T * < X - f 'y ^ > ^ Î $ 1 4 * ^ # n T Î 3 U , ;& Î l 7 7^ 5 l i L X - ^ X -f y ^ i » D C - D C = l > / < - $ IC ftilT '- fo	OCR Scan	PDF
LP 8029 L4 Abstract: Mosfet T460 LP 8029 m4 FTR 03-E T460 mosfet transistor dk qq diode F4 3J mosfet n channel k 946 diode U1J 2SK2410 Text: M O S ffiB W xÜ I^M O S FET M O S Field Effect T ran sisto r 2SK2410 -V -M O S F E T m U M Ì : m m 2 S K 2 4 1 0 IÎN ^ t? ^ H ÎÉ M ^ 7 -M O S F E T T ', 10.0 ± 0.3 4.5 ± 0.2 3.2 ± 0.2 7 W :M R 1 î ê I ‘- i Ê ' Æ 2.7 ± 0.2 o ~ C $ ~ r ft en	OCR Scan	PDF	2SK2410 2SK2410 LP 8029 L4 Mosfet T460 LP 8029 m4 FTR 03-E T460 mosfet transistor dk qq diode F4 3J mosfet n channel k 946 diode U1J
stm 8309 Abstract: m3003 L 0904 8178 bat 63-03 HF 4053 C2899 pa 3029 b MARKING 8042 M3003 16 aw 7199 Text: A CO M PA N Y M39003/01/02/03/04/06/09 Solid Tantalum C a p a cito rs S o lid -E le ctro ly te T a n t a l e x C a p a c ito rs , M ilitary MIL-C-39003 Q u alified, S ty le s C S R 0 9 , 13, 21, 23, 33, 91 OF SPRAGUE S T Y L E , D OCU M EN T/D ETAIL S P E C	OCR Scan	PDF	M39003/01/02/03/04/06/09 MIL-C-39003 CSR09, M39003/02 CSR13, M39003/01 CSR21, M39003/09 CSR23, M39003/03 stm 8309 m3003 L 0904 8178 bat 63-03 HF 4053 C2899 pa 3029 b MARKING 8042 M3003 16 aw 7199
vlt 2900 Abstract: uPD78P334 UPD78P334LQ 78p334 78P334LQ IC-8075 s13s3 T02I TFK 082 MPD78P334 Text: • 5/— h M osm m m s& M O S Integrated Circuit /¿PD78P334 1 6 / 8 tf "y V • > > //PD 78P334 It, "y~? • v> f ^ □ ¿«PD 78334C Q rtg\|$v*;? ROM •7> • i '- f A P R O M S S . B , —J tf c 'I t fc, EPROM S n M i, b° zl — 9 • ? -f A PROM i f c t i EPROM U S # f t x . / c n nn 'C f „	OCR Scan	PDF	uPD78P334 78P334 78334C PD78334 32768X8 J2T43Bt\ 24-i- vlt 2900 UPD78P334LQ 78p334 78P334LQ IC-8075 s13s3 T02I TFK 082 MPD78P334
Untitled Abstract: No abstract text available Text: FASTON H o u s i n g s AMPIP Post-Insulation Pods Flag Style Receptacle Housings Sides Ovartap Fun Length B C .2 5 0 S er ies .2 5 0 S er ies ;• Insulation UL 94 1 Color Ota. Max. * Continuous Scrip Nylon A ' Loose ra c e Nylon Continuous Strip B Nylon i wfimi Piece	OCR Scan	PDF	-25CT

AH5E Abstract: ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262 Text: NEC - f — S 7 • Ss— K Compound Transistor FA1A4P 'J □ > S#lF*3ìScNPN:i: f t W t 'iM i ^ m m l R i = 10 kQ , R 2 = 47 kQ ) 2 .8 + 0.2 0.65—8; i s 1.5 O F N 1 A 4 P t => > 7 ° ' ) 9 y 9 ') T l È f f l T 'è i t . II s zj u 9 9 •^ - x f S i ' I E	OCR Scan	PDF	PWS10 AH5E ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262
ifr 044 Abstract: 2SK484 JE 720 transistor JE 33 TRANSISTOR C 5857 X108 26-JE Text: NEC j m * T / v r x MOS Field E ffe c t P o w e r T ra n s is to r A 2SK484 N f t ^ ^ '° 7 - M O S j i m FET m N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 8 4 i±, > f - M O s n S F E T f"^ > H I/P A C K A G E DIMENSIONS Unit : mm	OCR Scan	PDF	2SK484 2SK484 ifr 044 JE 720 transistor JE 33 TRANSISTOR C 5857 X108 26-JE
j353 Abstract: j353 transistor transistor a935 transistor 5cw a935 transistor 2SJ353 Text: • S ' — h NEC S > v X ^ MOS Field Effect Transistor 2SJ353 P ^ Ÿ T 'v O / M O S F E T v j - x f m 2 S J3 5 3 t è P 3 1 Ÿ * > 'M W M O S F E T 7 \ 5 V t iÜ Ê IC C f t t t i* m m m it : mm 1C * -r ^ 5 1 > ? i f ^-e-r 0 j: > im .iffc < * * ¥ & « :*	OCR Scan	PDF	2SJ353 j353 j353 transistor transistor a935 transistor 5cw a935 transistor 2SJ353
Untitled Abstract: No abstract text available Text: NEC S t •is — h MOS M O S F ield E ffe c t P o w e r T ra n s is to r 2SK1122 7 N + * J W < r7 — 4 x N f t i'i« / N " 7 - M 0 S i : U ^ > ÎEÎA^'fS < , X j 'i / 7 i fc, l 5 V SïÜÎ3UC<7 M ÎÎ ’ mm) f-'j -r f > ^"#'14 b iStiX^^ôfzàb, 7 K,	OCR Scan	PDF	2SK1122
uc 4538 Abstract: UC 3245 J5LJ PA606T PA607T YA53 Text: MOS M O S Field E ffe ct T ra n sisto r «PA606T F E T 6 f c V 2 ^ :?- N f t ^ M O S MOS FE T £ 2 ¿¿PA606T ( i, k t^ m ft w m L fc s (3 M Ï : mm) »3, X T * m o S C - 5 9 s '° " / 'r ~ is tm tV - '( FET £ 2 — MOS l*I/$ o ^ P A 6 0 7 T ¿ 3 > 7 " I)	OCR Scan	PDF	uPA606T PA606T 484lfit uc 4538 UC 3245 J5LJ PA606T PA607T YA53
TI159 Abstract: TI-162 AF267 Germanium Transistor Texas Germanium 160 germanium transistor Text: TYPES TI159, TI 160, TI 161, TI162 P-N-P ALL0Y-JUNCTI0N GERMANIUM MEDIUM-POWER TRANSISTORS NO. DL-S 634413, DECEMBER 1963 The transistors a re in h erm etically-sealed w e ld e d leads. A p p ro x im a te weight: 4.8 gram s. cases with glass-to-m etal seals betw een case a n d	OCR Scan	PDF	TI159, TI162 TI161, TI159 TI-162 AF267 Germanium Transistor Texas Germanium 160 germanium transistor
Dii 1501 Abstract: UM01 2SJ358 TC8011 Diode UM01 LLB DU P1000 diode w94c RFT M-1 Text: M O S f ë W ï t ë ù m h 7 > y x $ M O S Field Effect T ra n s is to r 2SJ358 MOS FET m m x ' f y ^ > < 7 m 2SJ358ttP51+ ? O U » M O S FETT5, 5 V W ü& IC W tti tl te cfc-5 iâ ii %mA''ôJfÊ4' 7, -f -y ^ T'T o * S n ° p á 5 t - > f i Í A t f ''( g ; < X - f	OCR Scan	PDF	2SJ358 2SJ358tÃ IEI-620) Dii 1501 UM01 2SJ358 TC8011 Diode UM01 LLB DU P1000 diode w94c RFT M-1
9509 Abstract: CRYST 16.384MHZ PSB 8191 Text: S TANDARD PRO DUCT PMC-951013 PM PMC-Sierra, inc. ISSUE 4 PM6344EQUAD QUADE1 FRAMER P M 6344 E Q U AD QUADRUPLE E1 FRAMER I ssue 4: O c t o b e r , 1996 PMC-Sierra, Inc. 105-8555 Baxter Place, Burnaby, BC Canada V5A4V7 6044156000 S ta n d a rd P r o d u c t	OCR Scan	PDF	PM6344EQUAD PMC-951013 pmc-950906 9509 CRYST 16.384MHZ PSB 8191
ZTE MF 180 circuit Abstract: JVC 0J HCJ crystal PD-50p ntl9 kyx 28 lt024 sumi jo 87AD uPD78C18 Text: A Ü > oo ^ co Cd al I M I °» Cd M t— Kl o< oj O 3 oo > S [NJ O r>i $* C/3 4 üSl4 V njg <5 V' V 'S ►d ö •O OO O i—i oo > a 4* X > Ö s U V » X1 1 Oi 4^- « A s wT- 00 -X» 4 ^ >*' ^ rj Pt m s V >i 4 V -A V' x >i A sil ^ K' \r ■fc r V 00 t	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: 2 4 T H IS D R A W IN G S U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - .- R E V IS IO N S 50 RESERVED. - LTR D E S C R IP T IO N R EVISED PER DATE E C R - 1 1-01 806 3 C O N T IN U O U S STRESS 26DEC11 S TR IP	OCR Scan	PDF	26DEC11 65555P

S 6344 Search Results

S 6344 Price and Stock

TE Connectivity 63445-2

TE Connectivity 63442-1

Amphenol Corporation GSB4116344HR

Texas Instruments LM63440AFSQRYFRQ1

Texas Instruments LM63440AASQRYFRQ1

S 6344 Datasheets (2)

S 6344 Datasheets Context Search

190721

Untitled

diode T74A

2SJ328

str w 6556 equivalent

082D JRC

2SB1116

S72 FET

k1506

j329

LP 8029 L4

stm 8309

vlt 2900

Untitled

AH5E

ifr 044

j353

Untitled

uc 4538

TI159

Dii 1501

9509

ZTE MF 180 circuit

Untitled