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    S 8050 TRANSISTOR Search Results

    S 8050 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    S 8050 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN transistor 8050d

    Abstract: bc 8050 TRANSISTOR 8050 8050 d h 8050 transistor 8050 pin details NPN transistor 500ma TO-92 he 8050 d transistor TRANSISTOR c 8050 transistor b 8050
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 8050 SR13 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE 25 UNITS


    Original     		PDF C-120 190505E NPN transistor 8050d bc 8050 TRANSISTOR 8050 8050 d h 8050 transistor 8050 pin details NPN transistor 500ma TO-92 he 8050 d transistor TRANSISTOR c 8050 transistor b 8050

    st 8050d

    Abstract: st8050c st 8050C ST8050D transistor b 8050 st 8050 8050B transistor br 8050 transistor 8050d 8050c transistor
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    st 8050d

    Abstract: 8050 TRANSISTOR PNP BR 8050 BR 8050 D transistor br 8050 st8050c st 8050C 8050 pnp transistor NPN transistor 8050d 8050D
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    transistor br 8050

    Abstract: BR 8050 D BR 8050 NPN transistor 8050 PNP 8550 BR 8050 c hFE 8050 transistor b 8050 1/STK 8050 ic
    Text: 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    st 8050d

    Abstract: NPN transistor 8050d st8050c TRANSISTOR c 8050 transistor br 8050 BR 8050 D BR 8050 transistor b 8050 8050 pnp transistor 8050 TRANSISTOR PNP
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    st 8050d

    Abstract: st8050c st8050d BR 8050 D st 8050C 8050c transistor 8050 TRANSISTOR PNP BR 8050 st 8050 8050B
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    8050 D 168

    Abstract: NPN transistor 8050 168 HT16522 npn 8050 HT16523 HT16520 8050 TRANSISTOR HT16526 NPN transistor 8050
    Text: HT16520 16.8 Second Music Voice Features • • • • • • • • • Operating voltage: 2.4V~5.0V Directly driving an external transistor Low stand-by current 1µA Typ. for VDD=3V Minimum external components 508 notes maximum for table ROM Programmable silence length (0~4 secs) and


    Original     		PDF HT16520 HT16521 HT16522 HT16523 HT16524 HT16525 HT16526 8050 D 168 NPN transistor 8050 168 HT16522 npn 8050 HT16523 HT16520 8050 TRANSISTOR HT16526 NPN transistor 8050

    8050 transistor

    Abstract: 91450 1N4148 HT818D0
    Text: HT818D0 22.4 Second LOG-PCM Speech Features • • • • • • • • • • Operating voltage: 2.4V~5.0V Directly driving an output transistor Low stand-by current 1µA Typ. for VDD=3V Minimum external components FLAG1 options: – End-pulse output


    Original     		PDF HT818D0 KEY12 180ms KEY12 1N4148 8050 transistor 91450 1N4148 HT818D0

    8050 D 168

    Abstract: 1N4148 HT817D0 transistor 8050 using
    Text: HT817D0 16.8 Second LOG-PCM Speech Features • • • • • • • • • • Operating voltage: 2.4V~5.0V Directly driving an output transistor Low stand-by current 1µA Typ. for VDD=3V Minimum external components FLAG1 options: – End-pulse output


    Original     		PDF HT817D0 KEY12 180ms KEY12 1N4148 8050 D 168 1N4148 HT817D0 transistor 8050 using

    NPN transistor 8050d

    Abstract: BR 8050 D transistor br 8050 st 8050d 8050c 8050 pnp transistor 8050c transistor BR 8050 S 8050 transistor 8050d
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA 800mA 800mA, NPN transistor 8050d BR 8050 D transistor br 8050 st 8050d 8050c 8050 pnp transistor 8050c transistor BR 8050 S 8050 transistor 8050d

    NPN transistor 8050d

    Abstract: BR 8050 D 8050c transistor transistor BR 8050 st 8050d 8050d BR 8050 TRANSISTOR 8050D transistor S 8050 8050 pnp transistor
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA 800mA 800mA, NPN transistor 8050d BR 8050 D 8050c transistor transistor BR 8050 st 8050d 8050d BR 8050 TRANSISTOR 8050D transistor S 8050 8050 pnp transistor

    equivalent of transistor 8050

    Abstract: 8050F
    Text: LTM8050 58V, 2A Step-Down µModule Regulator Features Description Wide Input Voltage Range: 3.6V to 58V 60V Absolute Maximum n Up to 2A Output Current n Parallelable for Increased Output Current n 0.8V to 24V Output Voltage n Adjustable Switching Frequency: 100kHz to 2.4MHz


    Original     		PDF LTM8050 100kHz 58VIN, LTM8050 8050f com/LTM8050 equivalent of transistor 8050 8050F

    equivalent of transistor 8050

    Abstract: 8050 TRANSISTOR equivalent
    Text: LTM8050 58V, 2A Step-Down µModule Regulator FEATURES DESCRIPTION Wide Input Voltage Range: 3.6V to 58V 60V Absolute Maximum n Up to 2A Output Current n Parallelable for Increased Output Current n 0.8V to 24V Output Voltage n Adjustable Switching Frequency: 100kHz to 2.4MHz


    Original     		PDF LTM8050 100kHz 58VIN, LTM8050 8050fb com/LTM8050 equivalent of transistor 8050 8050 TRANSISTOR equivalent

    8050 TRANSISTOR equivalent

    Abstract: No abstract text available
    Text: LTM8050 58V, 2A Step-Down µModule Regulator FEATURES DESCRIPTION Wide Input Voltage Range: 3.6V to 58V 60V Absolute Maximum n Up to 2A Output Current n Parallelable for Increased Output Current n 0.8V to 24V Output Voltage n Adjustable Switching Frequency: 100kHz to 2.4MHz


    Original     		PDF LTM8050 100kHz 58VIN, LTM8050 8050fa com/LTM8050 8050 TRANSISTOR equivalent

    diode st 4148

    Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
    Text: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)


    OCR Scan     		PDF MMBT8050LT1 OT-23) -LL4001-LL4007 -LL4148 1N4001-1N4007 diode st 4148 ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148

    200 watt audio ic

    Abstract: ic 8050 8050h
    Text: CRÛ 8050 G E N E R A L D E S C R IP T IO N :- •4 H ie 8 0 5 0 is an NPN epitaxial silicon planar transistor designed for use in the audio ou tp ut stage and converter/inverter circuits. Complem entary to 8550. TO-92A R A T IN G S Note 1 Maximum Temperatures


    OCR Scan     		PDF 100mA Box69477, 200 watt audio ic ic 8050 8050h

    transistor 8550

    Abstract: CL8550 8550 transistor h 8550 pnp transistor
    Text: CL8550 T 0 -9 2 B oENERAL DESCRIPTION:— The 8550 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. ABSOLUTE M A X IM U M R A T IN G S „ T O -928 (Note 1) Maximum Temperatures


    OCR Scan     		PDF CL8550 100mA Boxfe477. transistor 8550 CL8550 8550 transistor h 8550 pnp transistor

    h 8550 pnp transistor

    Abstract: No abstract text available
    Text: 8550 G E N E R A L D E S C R IP T IO N :- Hie 8550 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. A BSO LU T E M A X IM U M R A T IN G S TO-92A Note 1 Maximum Temperatures


    OCR Scan     		PDF O-92A h 8550 pnp transistor

    CL8550

    Abstract: 8550 ecb transistor 8550 transistor 8550 d cl855 PNP transistor 8550 transistor 8550 ECB
    Text: JENERAL DESCRIPTION:— The 8 5 5 0 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. A B SO LU TE M A X IM U M R A T IN G S N ote T O -9 2 8 1 Maximum Temperatures


    OCR Scan     		PDF CL8550 O-92B) T0-92B 33mW/Â 40PC/W 25mW/Â 100mA CL8550 8550 ecb transistor 8550 transistor 8550 d cl855 PNP transistor 8550 transistor 8550 ECB

    BR 8050 D

    Abstract: transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h
    Text: HN 8050 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type


    OCR Scan     		PDF 103mA BR 8050 D transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h

    internal circuit of UM3561

    Abstract: Siren Sound Generator circuit diagram UM3561 um3562 UM3561 pin diagram Siren Sound Generator 4 sound UM3561 Siren Sound Generator 5 sound siren police diagram Siren Sound Generator transistor UM3561
    Text: UNICORN MICROELECTRONICS E4E » • ia7fl?fiö 0001543 1 ■ T - 17^13 U M 3561 Three Siren Sound Generator Features ■ A magnetic speaker can be driven by connecting an ■ Four sounds can be selected NPN transistor ■ Typical 3V operating voltage ■ Power on reset


    OCR Scan     		PDF UM3561 UM3561 2SC9013 T27fl DGD154ti- VssSEL20SC2 UM3S61 internal circuit of UM3561 Siren Sound Generator circuit diagram um3562 UM3561 pin diagram Siren Sound Generator 4 sound UM3561 Siren Sound Generator 5 sound siren police diagram Siren Sound Generator transistor UM3561

    transistor S 8050

    Abstract: ggqb2 8A273 BYW60 Diode BYW 56 150TV diodes byw transistor 8050 d diode BYW 60
    Text: S G S^C D I 7 ^ 2 3 7 S -TH G M S O N O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 02240 f D ^ o î - n ^ HIGH EFFICIENCY


    OCR Scan     		PDF BYWB05Q 130OC CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 transistor S 8050 ggqb2 8A273 BYW60 Diode BYW 56 150TV diodes byw transistor 8050 d diode BYW 60

    diode BYW 66

    Abstract: diode P2F DIODE DO-220 high efficiency fast recovery diode byw BYW 90 diode BYW 85 BYW 26 8050 2D C diode BYW diode BYW 60
    Text: S^C D I 7 ^ 2 3 7 S G S-THGMSON O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 0 2 2 4 0 f D ^ o î - n ^ HIGH EFFICIENCY


    OCR Scan     		PDF BYW80150A Q00S2M5 diode BYW 66 diode P2F DIODE DO-220 high efficiency fast recovery diode byw BYW 90 diode BYW 85 BYW 26 8050 2D C diode BYW diode BYW 60

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR TECHNICAL DATA 8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION Package: TO-92 * Complement to 8050 * Collector Current: lc—1.5A * Collector Dissipation Pc=lW TtoF=25°C


    OCR Scan     		PDF -100uA 100mA -800mA -800mA -80mA -10mA -50mA