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    S PARAMETERS FOR TRANSISTOR Search Results

    S PARAMETERS FOR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    S PARAMETERS FOR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n3478

    Abstract: RF Transistor s-parameter
    Text: Test & Measurement Application Note 95-1 H S-Parameter Techniques for Faster, More Accurate Network Design http://www.hp.com/go/tmappnotes H Contents 1. Foreword and Introduction 2. Two-Port Network Theory 3. Using S-Parameters 4. Network Calculations with Scattering Parameters


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    Abstract: No abstract text available
    Text: STX3P3 Medium voltage fast-switching PNP power transistor Features • Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Application ■ Electronic ballast for fluorescent lighting s t TO-92


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    Untitled

    Abstract: No abstract text available
    Text: BULT3P3 Medium voltage fast-switching PNP power transistor Features • Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed s ct Application ■ u d o Electronic ballast for fluorescent lighting


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    PDF OT-32

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors s-parameter definitions 1 General SCATTERING PARAMETERS For the use of s-parameters for the specification of The scattering or s-parameters described in this document are in accordance with IE C 60747-7, Chapter II, Section 5. 1.1 In distinction to the conventional h-, y- and z-parameters,


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    SC-0351

    Abstract: ST13005 transistor 13005 CIRCUIT Transistor 13005- 2 transistor 13005
    Text: SGS-THOMSON S i IHD S T 13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . • . . MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS: . ELECTRONIC BALLASTS FOR


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    PDF O-220 ST13005 SC-0351 SC-0351 ST13005 transistor 13005 CIRCUIT Transistor 13005- 2 transistor 13005

    BUL26D

    Abstract: BULK26D T-82 lb 385 IC circuit diagram
    Text: BUL26D BULK26D S G S -T H O M S O N m . MEDIUM VOLTAGE FAST-SWITCHING _ NPN POWER TRANSISTOR PRELIMINARY DATA . SGS-THOMSON PREFERRED SALESTYPES . MEDIUM VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION


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    PDF BULK26D BUL26D BULK26D BUL26D T-82 lb 385 IC circuit diagram

    ST13005 transistor

    Abstract: No abstract text available
    Text: s = 7 S ^7# G S - T H O M S O N Kl gKLiM(s iO(gS ST13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . MEDIUM VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED


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    PDF ST13005 ST13005 transistor

    SC-0351

    Abstract: BULD118-1
    Text: S G S -T H O M S O N B U L D 118-1 iMiniSiRitaignigfafiRiOBinieg HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS:


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    PDF BULD118-1 O-251) SC-0351 O-251 0068771-E

    transistor LB 13003 C

    Abstract: t13003 T 08 13003 transistor g 13003 transistor m 3003 g transistor switch 13003 j e 13003 transistor E 13003 TRANSISTOR transistor 13003 13003 j TRANSISTOR
    Text: S G S -T H O M S O N E fi M lF3m i g ? [ M 0igS S T 13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . MEDIUM VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS:


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    PDF ST130Q3 transistor LB 13003 C t13003 T 08 13003 transistor g 13003 transistor m 3003 g transistor switch 13003 j e 13003 transistor E 13003 TRANSISTOR transistor 13003 13003 j TRANSISTOR

    BUL31OPI

    Abstract: NS10l BUL310 BUL310PI 1010S2 lb 385 IC circuit diagram
    Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ BUL310 BUL310PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS . . . . . . . . . SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR


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    PDF BUL310 BUL31OPI ISOWATT220 E81734 500VRMS BUL310 BUL310PI BUL310/PI ISOWATT22Q BUL31OPI NS10l 1010S2 lb 385 IC circuit diagram

    transistor BC 147

    Abstract: BUL56D transistor bul 38 bc 147 B transistor transistor bc 325
    Text: n r z S G S - T H O M S O N HO i |[Li©fi®iDei BUL58D HIGHVOLTAGEFAST-SWIT CHING NPN POWER TRANSISTOR • . . . . . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR


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    PDF BUL58D BUL58D S6S-1H0M80HI transistor BC 147 BUL56D transistor bul 38 bc 147 B transistor transistor bc 325

    Untitled

    Abstract: No abstract text available
    Text: s= 7 SGS-THOMSON ^ 7# K l g K L iM ( S iO (g S B U L 382D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . • . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION


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    PDF BUL382D

    L128D

    Abstract: BUL128D SC-0351
    Text: n Z Z S C S -T H O M S O N ^ 7# B U L128D HIGH VOLT AG EFAST^S WÏTCHING NPN POWER TRANSISTOR . • . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION


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    PDF L128D BUL128D GC69490 SC-0351 BUL128D SC-0351

    BUL310FP

    Abstract: gc639
    Text: s=7 SGS-THOMSON ^7# K l « iL iM (s iO (gS BUL310FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION


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    PDF BUL310FP BUL310FP gc639

    lb 385 IC circuit diagram

    Abstract: BUL57 BUL57PI 16AIB
    Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ BUL57 BUL57PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS . BUL57 IS SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR


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    PDF BUL57 BUL57PI ISOWATT220 E81734 1500VRMs P011C lb 385 IC circuit diagram 16AIB

    Untitled

    Abstract: No abstract text available
    Text: s = 7 S G S - T H O M S O N ^ 7# K l g K L iM ( s iO ( g S B U L D 1 1 8 D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR


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    Untitled

    Abstract: No abstract text available
    Text: s = 7 S G S-TH O M SO N ^ 7# K l g K L iM ( s iO ( g S B U L T 1 18 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION


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    Untitled

    Abstract: No abstract text available
    Text: r = T ^7# S G S -T tiO M S O N 13BiS^ l[Lü iri®iS©i BULD118D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR


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    PDF 13BiS^ BULD118D-1 SC-0351

    BUL128

    Abstract: alu schematic circuit with transistor
    Text: S G S -T H O M S O N «l!3mi ¥[FM[]©S BUL128 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . • « . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION


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    PDF BUL128 BUL128 BUL128; 62-19C alu schematic circuit with transistor

    BUL128D

    Abstract: bul128db
    Text: s = 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS BUL128D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDERING CODES : BUL128D-A AND BUL128D-B . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR


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    PDF BUL128D BUL128D-A BUL128D-B BUL128D bul128db

    transistor 13003 AD

    Abstract: transistor eb 13003 TU F 13003 transistor Eb 13003 A eb 13003 transistor LB 13003 C 0/transistor 13003 AD ST13003
    Text: S G S - T H O M S O N M œ Ë IL Ë O T fô ® K I S T 13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . MEDIUM VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS:


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    PDF ST13003 OT-32 O-126) transistor 13003 AD transistor eb 13003 TU F 13003 transistor Eb 13003 A eb 13003 transistor LB 13003 C 0/transistor 13003 AD ST13003

    Untitled

    Abstract: No abstract text available
    Text: S G S -T H O M S O N RfflD0lsi i[Liera®[i!lDS$ B U L T 1 18D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . NPN TRANSISTOR . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR


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    PDF SC-0351 BULT118D OT-32 O-126)

    SC-0351

    Abstract: No abstract text available
    Text: rrr “ 7# sg s -th o m s o n m m s x m iim m im m b u lth s d HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . NPN TRANSISTOR . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE • HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR


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    PDF BULT118D SC-0351 SC-0351

    MH400

    Abstract: No abstract text available
    Text: r = T S G S -T H O M S O N m,7 # HlOÊi lil EîK(ô Mi5i BULD118-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . HIGH VOLTAGE CAPABILITY • LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED


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    PDF BULD118-1 SC-0351 MH400