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    S-PARAMETER RF POWER TRANSISTOR NPN Search Results

    S-PARAMETER RF POWER TRANSISTOR NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    S-PARAMETER RF POWER TRANSISTOR NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFU590G

    Abstract: No abstract text available
    Text: 62 7  BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590G OT223 BFU590G AEC-Q101 BFU590GX

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590Q BFU590Q AEC-Q101 BFU590QX

    Untitled

    Abstract: No abstract text available
    Text: 62 7  % BFU520 NPN wideband silicon RF transistor Rev. 2 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU520 OT143B BFU520 AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFU520XR NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to


    Original     		PDF BFU520XR OT143R BFU520XR AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590Q BFU590Q AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  % BFU520 NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.


    Original     		PDF BFU520 OT143B BFU520 AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  % BFU520X NPN wideband silicon RF transistor Rev. 2 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU520X is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU520X OT143B BFU520X AEC-Q101

    AN11436

    Abstract: No abstract text available
    Text: 62 7  % BFU530X NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU530X is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU530X OT143B BFU530X AEC-Q101 AN11436

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU590G OT223 BFU590G AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFU530XR NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to


    Original     		PDF BFU530XR OT143R BFU530XR AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  % BFU550X NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU550X is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU550X OT143B BFU550X AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  % BFU520X NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.


    Original     		PDF BFU520X OT143B BFU520X AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU520W NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package. The BFU520W is part of the BFU5 family of transistors, suitable for small signal to


    Original     		PDF BFU520W OT323 BFU520W AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU520A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU520A BFU520A AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFU550XR NPN wideband silicon RF transistor Rev. 1 — 14 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU550XR is part of the BFU5 family of transistors, suitable for small signal to


    Original     		PDF BFU550XR OT143R BFU550XR AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU550W NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package. The BFU550W is part of the BFU5 family of transistors, suitable for small signal to


    Original     		PDF BFU550W OT323 BFU550W AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU550A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU550A is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU550A BFU550A AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  % BFU550 NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU550 OT143B BFU550 AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU530W NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package. The BFU530W is part of the BFU5 family of transistors, suitable for small signal to


    Original     		PDF BFU530W OT323 BFU530W AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 62 7  % BFU530 NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU530 is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU530 OT143B BFU530 AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFU520Y Dual NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package. The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU520Y OT363 BFU520Y AEC-Q101

    BFU590G

    Abstract: No abstract text available
    Text: 62 7  BFU580G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU580G OT223 BFU580G AEC-Q101 BFU590G

    Untitled

    Abstract: No abstract text available
    Text: 62 7  BFU580Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU580Q is part of the BFU5 family of transistors, suitable for small signal to medium


    Original     		PDF BFU580Q BFU580Q AEC-Q101

    34D SERIES CAPACITOR

    Abstract: BLY92 BLY92C Philips MBB .J275
    Text: 711065b Philips Semiconductors PHILIPS INT ERN AT ION AL D0 b 3 b 3 7 5 7 fl P H IN Product specification b5E » VHF power transistor BLY92C/01 DESCRIPTION PIN CONFIGURATION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


    OCR Scan     		PDF D0b3b37 BLY92C/01 OT122F1A OT122F M34326 11J1U 34D SERIES CAPACITOR BLY92 BLY92C Philips MBB .J275