D180SC4M

Abstract: marking aa diode
Contextual Info: Schottky Barrier Diode Diode Module M Hïïm OUTLINE Package I Module D180SC4M Unit : mm W eight 62R T yp > 3-M4 nui thickness = 3.2 40 V 180A 2 Q Feature öi° • High lo Rating-Module-PKG •« V f • Low V f • 8 jc ô V J 'Î l' • Small 9 je £>

Contextual Info: y ay h U t K — $•4 Schottky Barrier Diode K ïÿ i-J l Diode Module OUTLINE DIMENSIONS D240SC6MH Case : Modules 60V 240A « ¥ 11 / • ßVF © © •*£ !S R B jg •D C /D C D V A -^ • IC x ^ i? - ■ Æ tè ü RATINGS Absolute Maximum Ratings

Contextual Info: PANASONIC INDL/ELEK -CIO 75 ' 69 32 8 52 PANASONIC I NOL « E L E C T R O N I C . DE 1 ^ 3 2 0 5 2 00Dbbb3 4 | . _7 ? C 06663 . P, T-41-55 MN512K M N512K a e a s 5 i2 mos y \c«j v -r^s Se lf- Sca nni ng 512-Bit M O S Linear Image S e n s o r • fit

Contextual Info: -GT25G10KSM SILICON N CHANNEL MOS TYPE STROBE FLASH APPLICATIONS Unit in nun 1 0.3MAX . High Input Impedance . Low Saturation Voltage : VcE sat)=8V(llax.) (Ic=170A) . Enhancement-Mode . 20V Gate Drive MAXIMUM RATINGS (Ta-25°C) SYMBOL CHARACTERISTIC Collector-Enitter Voltage

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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