S1025 Search Results

SUP90P06-09L

Contextual Info: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS

Contextual Info: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated

Si7625DN

Abstract: mosfet 4430 si7625 S10-2503
Contextual Info: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

BYS10-45

Abstract: bys10
Contextual Info: Tem ic BYS10 S e m i c o n d u c t o r s Schottky Barrier Rectifier Features • High efficiency • Low power losses • Very low switching losses • Low reverse current • High surge capability Applications Polarity protection Low voltage, high frequency rectifiers

S6025

Abstract: S1055M S8025 S4008 S0525 S4025 SCR S1055m S8055R S1070W S6020
Contextual Info: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U TO-92 TO-218AC TO-202AB TO-218X A THERMOTAB TO-220AB K G SCRs 1 – 70 Amps 6 General Description Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more

IRLZ24L

Abstract: IRLZ24S SiHLZ24L SiHLZ24L-E3 SiHLZ24S
Contextual Info: IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive

C1841

Abstract: c1871 c1118 C1861 B59022-S1120-A70 C1851 C1831 B59025-S1120-A70 B59022S1120A70 B59861-C1120-A70
Contextual Info: Ausgewählte Anwendungen Selected applications Maßbild Typ Nennstrom Outline drawing Type Rated current mA 6 ,Ûm ax Bestell-Nr. NennMaße widerstand Rated Dimensions resistance Ordering code f l 25 ^m ax ^m ax 0d Q mm mm mm Vmax = 265 V, 7~Ref = 120 °C Trafoschutz/Transformer protection

IRL640S

Abstract: SMD-220 S10 SMD MARKING
Contextual Info: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition

IRFSL9N60A

Abstract: SiHFSL9N60A SiHFSL9N60A-E3
Contextual Info: IRFSL9N60A, SiHFSL9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

C1068

Abstract: SUP90P06-09L SUP90P06-09L-E3
Contextual Info: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS

Contextual Info: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V

Contextual Info: Si1072X Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) Qg (Typ.) 0.093 at VGS = 10 V 1.3a 1.2 5.41 0.129 at VGS = 4.5 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si1050X Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 Qg (Typ.) 7.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated

Contextual Info: Bulletin PD-20533 rev. C 02/03 FD160H06A5B Fred Die in Wafer Form a 0.35 ± 0.01 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS INCHES . 2. CONTROLLING DIMENSION (INCH): d C b NOTES: (0.014 ± 0.0004) c A 40 (1.57) Wafer flat alligned with side b of the die 3. DIMENSIONS AND TOLERANCES:

Contextual Info: Bulletin I0514J rev. A 01/03 FD075H06A5. Fred Die in Wafer Form a 0.35 ± 0.01 c 14 ± 0.4 NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS). 2. CONTROLLING DIMENSION (MILS): b d C A 40 (1.57) 3. DIMENSIONS AND TOLERANCES: a = 1.905 ± 0.01 (75 ± 0.4)

Contextual Info: Bulletin I0405J rev. B 10/03 SC021.5. Series SCHOTTKY DIE 21 x 45 mils 40 157 Wafer flat alligned with side b of the die a 0.35 ± 0.01 c (14 ± 0.4) A d b C D NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS) Ø Ø 125 (492) 2. CONTROLLING DIMENSION: (MILS)

FD120H06A5B

Abstract: 15ETH06 S1025 20183
Contextual Info: Preliminary Data Sheet PD-20183 rev. A 06/01 FD120H06A5B Fred Die in Wafer Form a 0.35 ± 0.01 0.014 ± 0.0004 c NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 2. CONTROLLING DIMENSION (INCH): b d C A 40 (1.57) Wafer flat alligned with side b of the die

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

FD100W06A5F

Abstract: FD100W06A5B
Contextual Info: PD - 20990 FD100W06A5B FRED Die in Wafer Form # # 600V VF = 3.0 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel , Chip Pack, and Sawn on Film "(upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter

Contextual Info: Bulletin I0503J rev. B 07/00 SC105.5. Series SCHOTTKY DIE 105 x 125 mils a 0.35 ± 0.01 0.14 ± 0.0004 c NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 2. CONTROLLING DIMENSION: (INCH). 3. DIMENSIONS AND TOLERANCES: a = 3.18 + 0, - 0.05

ln393

Abstract: TAG 203 350 PS-120 C231A 2NS505 C230A bj100
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer lB15CL05 lB15Cl10 lB15CL20 lB15CL30 lB15CL40 lB40CL05 lB40CL10 lB40CL20 lB40CL30 lB40CL40 lN3300 lN3300A lN3301 2N490 GnrlElec/GE Texas Inslr Unilex 2N490A

FD059H06A5B

Abstract: 31-2 MIL-HDBK-263 S1025
Contextual Info: I - 0512J rev. A FD059H06A5B FRED Die in Wafer Form z z 600V VF = 1.45V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage

TRIAC zo 607 MA

Abstract: ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760
Contextual Info: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’