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Catalog Datasheet	MFG & Type	Document Tags	PDF
uPD42280V-30 Abstract: uPD42280 UPD428 UD-P42 Text: µPD42280 2-MBIT FIELD BUFFER 1996 Document No. S10655EJ1V0UM00 1st edition Date Published November 1996 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and	Original	PD42280 S10655EJ1V0UM00 uPD42280V-30 uPD42280 UPD428 UD-P42	PDF

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uPD42280V-30

Abstract: uPD42280 UPD428 UD-P42
Text: µPD42280 2-MBIT FIELD BUFFER 1996 Document No. S10655EJ1V0UM00 1st edition Date Published November 1996 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and

Original

PD42280 S10655EJ1V0UM00 uPD42280V-30 uPD42280 UPD428 UD-P42

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