AMF100540L
Abstract: AMF100540L2500AT AMF160840D87181AT S1156 AMF160840D87181BT AMF100540L0620AT AMF100540L2450AT 2400-2500MHz
Text: MD-MDE015-201212 Multilayer Chip LPF AMF1005 L / AMF1608D Series Features Applications • Ultra Small Size and Low Profile Mobile phone 1.0mm（L）x0.5mm（W）×0.4mm（H） typ. RF Module 1.0mm（L）×0.5mm（W）×0.5mm（H） typ. Antenna Switch Module
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MD-MDE015-201212
AMF1005
AMF1608D
806MHz)
AMF100540L0620AT
770MHz)
1429-1516MHz)
1710-2155MHz)
2400-2500MHz)
AMF100540L0870AT
AMF100540L
AMF100540L2500AT
AMF160840D87181AT
S1156
AMF160840D87181BT
AMF100540L2450AT
2400-2500MHz
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130-082
Abstract: IC TB 1237 AN NEC 7812 amplifier simulation circuit C band FET transistor s-parameters s2p n34018h AN1022 CS 5609 transistor NEC 7812 IC LM 7812
Text: California Eastern Laboratories AN1022 APPLICATION NOTE Designing Low Noise Amplifiers for PCS Application ABSTRACT DEVICE CHOICE AND CHARACTERISTIC This application note will review the process by which microwave amplifier designers choose their designs based
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AN1022
24-Hour
130-082
IC TB 1237 AN
NEC 7812
amplifier simulation circuit
C band FET transistor s-parameters
s2p n34018h
AN1022
CS 5609
transistor NEC 7812
IC LM 7812
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130-082
Abstract: Transistor LM 7812 NEC 7812 34018 2052-1215 NEc hemt CS 5609 NE34018 equivalent transistor NEC 7812 IC LM 7812
Text: California Eastern Laboratories AN1022 APPLICATION NOTE Designing Low Noise Amplifiers for PCS Application ABSTRACT DEVICE CHOICE AND CHARACTERISTIC This application note will review the process by which microwave amplifier designers choose their designs based
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AN1022
130-082
Transistor LM 7812
NEC 7812
34018
2052-1215
NEc hemt
CS 5609
NE34018 equivalent
transistor NEC 7812
IC LM 7812
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rogers* 4403
Abstract: rogers 4403 HMC454 HMC454ST89
Text: V00.1004 PRODUCT APPLICATION NOTE Designing with the HMC454ST89 Amplifier Utilizing Small Signal S-parameters General Description The HMC454ST89 is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor HBT ½ watt MMIC amplifier operating between 0.4 and 2.5 GHz. Packaged in a low cost industry standard SOT89, the amplifier gain
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HMC454ST89
typically17
40dBm
rogers* 4403
rogers 4403
HMC454
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Untitled
Abstract: No abstract text available
Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK V00.1004 PRODUCT APPLICATION NOTE Designing with the HMC454ST89 Amplifier Utilizing Small Signal S-parameters
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HMC454ST89
typically17
40dBm
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esm-ba2
Abstract: ESM-BT421 esm 107 ESM-BA303 ESM-BT411 ESM-BA202 ESM-BT401 ESM-BA302 ESM-BA201 ESM-2H201
Text: Safety Relays ESM/ ESM-F More than safety. Safety More than safety. Around the world – the Swabian specialists in motion sequence control for mechanical and systems engineering. Emil Euchner, the company’s founder and inventor of the multiple limit switch, circa 1928.
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autotransformer starter medium voltage
Abstract: H9208 relay HM 810
Text: www.toshiba.com/ind 2013 Toshiba International Corporation • Rev. 130222 Industrial Catalog 2013 13131 W. Little York Road • Houston, TX 77041 Tel: 713-466-0277 Fax: 713-466-8773 US: 800-231-1412 Canada: 800-872-2792 Mexico: 800-527-1204 2013 Industrial Catalog
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2n3478
Abstract: RF Transistor s-parameter
Text: Test & Measurement Application Note 95-1 H S-Parameter Techniques for Faster, More Accurate Network Design http://www.hp.com/go/tmappnotes H Contents 1. Foreword and Introduction 2. Two-Port Network Theory 3. Using S-Parameters 4. Network Calculations with Scattering Parameters
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AMF1608B2450A1T
Abstract: AMF1005B2450AT AMF1608B2450B1T 2400-2500MHz
Text: MD-MDE013-201212 Multilayer Chip BPF AMF1005B / AMF1608B Series Applications Features • Mobile phone Ultra Small Size and Low Profile 1.6mm（L）x0.8mm（W）×0.4mm（H） typ. W-LAN , Bluetooth , etc. 1.0mm（L）×0.5mm（W）×0.4mm（H） typ.
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MD-MDE013-201212
AMF1005B
AMF1608B
960MHz)
AMF1005B2450AT
4800-5000MHz)
7200-7500MHz)
1710-1990MHz)
2110-2170MHz)
AMF1005B5375AT
AMF1608B2450A1T
AMF1608B2450B1T
2400-2500MHz
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ATF10236
Abstract: FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686
Text: Using the ATF-10236 in Low Noise Amplifier Applications in the UHF Through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t
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ATF-10236
frequen058
5963-3780E
5966-0166E
ATF10236
FET K 2611
TRANSISTOR BD 137-10
AGILENT 9988
microstripline
ATF-10136
transistor equivalent 2274 table chart
ATF-10736
HP346A
MSA-0686
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ATF-10736
Abstract: AN-G005 ATF10236 ATF-10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05
Text: Using the ATF-10236 in Low Noise Amplifier Applications in␣ the UHF through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t
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ATF-10236
ATF-10736
AN-G005
ATF10236
ATF10136
ATF-10136
HP346A
MSA-0686
TK11650U
TL05
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3G antenna design
Abstract: 987650* "molex"
Text: Molex’s class-leading 2.4/5GHz standalone antennas combine ground-plane-independent design with high-radiation efficiency to give customers better connectivity and reduced development time for wireless devices Key to any wireless applications that impact the most critical design variables
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USA/KC/2011
3G antenna design
987650* "molex"
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ROHM capacitor 100nf 50v 0603 x7r
Abstract: 80pf philips Trimmer capacitors MCH185C103KK application notes sa602 DFC2R SA620 0805CG569C9BB0 DFC2R881 SA601 SMV 142
Text: INTEGRATED CIRCUITS AN1777 Low voltage front-end circuits: SA601, SA620 M. B. Judson Philips Semiconductors 1997 Aug 20 Philips Semiconductors Application note Low voltage front-end circuits: SA601, SA620 AN1777 Author: M. B. Judson CONTENTS I. Introduction . . . . . . . . . . . . . . . . . . . . . . . . .
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AN1777
SA601,
SA620
SA601
SA620
ROHM capacitor 100nf 50v 0603 x7r
80pf philips Trimmer capacitors
MCH185C103KK
application notes sa602
DFC2R
0805CG569C9BB0
DFC2R881
SMV 142
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Filter
Abstract: Switches Broadcast rf switches spinner
Text: SPINNER | BROADCAST Edition E | 2014 High Frequency Performance Worldwide www.spinner-group.com Auf unserer Webseite erhalten Sie immer die aktuellsten Updates. Zum Schutz unserer Umwelt können Sie den Katalog dort als PDF-Datei downloaden. On our website you will find our latest updates.
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s11 hall magnetic sensor
Abstract: No abstract text available
Text: WHITE PAPER: WP016 eGaN FET Small Signal RF Performance eGaN® FET Small Signal RF Performance EFFICIENT POWER CONVERSION Michael de Rooij, Ph.D., Executive Director of Applications Engineering and Johan Strydom, Ph.D., V.P., Applications, Efficient Power Conversion Corporation
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WP016
EPC2012
EPC2012
s11 hall magnetic sensor
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yg 2025
Abstract: HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532
Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors
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5964-3854E
yg 2025
HP346A
2305 isolator
AT-30511
AT-31011
AT-32033
ATF-10236
AN-G004
equivalent transistor K 3532
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HP346A
Abstract: D2030 5091-9311E 47433 W02 SOT23 AT-30511 AT-31011 AT-32033 ATF-10236 Hewlett-Packard transistor microwave
Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors
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ANTENNA dipole
Abstract: No abstract text available
Text: M ModFLEX A Accessorie es – 2.4 GH Hz Dipole Antenna A DATASHEET 2.4 GHzz – 2.5 GHz G Dipo ole 2dBii Antenn na for Re everse Polarity P SMA O ORDERIN NG INFOR RMATION N Order Number 001-0001 1 D Description 2.4 4 GHz dipole antenna for reverse r polariity SMA conn
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2400-2500MHz
330-0016-R1.
ANTENNA dipole
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2.4 GHz dipole antenna
Abstract: 2400-2500MHz
Text: M ModFLEX A Accessorie es – 2.4 GH Hz Dipole Antenna A DATASHEET 2.4 GHzz – 2.5 GHz G Dipo ole 2dBii Antenn na for Re everse Polarity P SMA O ORDERIN NG INFOR RMATION N Order Number 001-0001 1 D Description 2.4 4 GHz dipole antenna for reverse r polariity SMA conn
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2400-2500MHz
330-0016-R1.
2.4 GHz dipole antenna
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Untitled
Abstract: No abstract text available
Text: M ModFLEX A Accessorie es – 2.4 GH Hz Dipole Antenna A DATASHEET 2.4 GHzz – 2.5 GHz G Dipo ole 2dBii Antenn na for Re everse Polarity P SMA O ORDERIN NG INFOR RMATION N Order Number 001-0001 1 D Description 2.4 4 GHz dipole antenna for reverse r polariity SMA conn
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2400-2500MHz
330-0016-R1.
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SOT143 L03
Abstract: L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236
Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note AN 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors offer state-ofthe-art noise figure and gain performance with low power
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5964-3854E
SOT143 L03
L0523
D2030
L03 sot143
yg 2025
microstripline FR4
AT-30511
AT-31011
W02 SOT23
ATF-10236
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rf mems switch spst
Abstract: SKY13317-373 Hittite RF Switch SOI military switch EDN handbook rf3024 SKY13317-373LF RF3023 RF3025 2SMES-01
Text: R F switching options: The right fit might come with a loss Manufacturers are offering SOI and MEMS alternatives to PIN-diode, GaAs, and electromechanical switches for a variety of RF applications, but you need to understand RF-switch specs before you commit to a new technology.
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AN-952,
com/090917cs
rf mems switch spst
SKY13317-373
Hittite RF Switch SOI
military switch
EDN handbook
rf3024
SKY13317-373LF
RF3023
RF3025
2SMES-01
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Untitled
Abstract: No abstract text available
Text: U92U3 Low-Current RFIC Downconverter Features « • The TQ9203 RFIC Downconverter is a multifunction RF front end designed for the high dynamic range cellular communications standards. The design of the TQ9203 provides a 2.5 dB system noise figure for excellent sensitivity, and a good signal
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U92U3
TQ9203
TQ9203
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SAS SFF-8087
Abstract: SAS SFF-8086 SAS SFF-8484 SFF8484 pinout SFF-8484 cj cl a17 IPASS SAS SFF-8086 SFF-8087 SFF-8643 pinout
Text: 10 I MATERIAL 79576-5000 79576-5001 79576-5002 79576-5003 79576-5004 79576-9000 79576-9001 79576-9002 79576-9003 79576-9004 79576-5020 79576-5021 79576-5022 79576-5023 79576-5024 APPS I PASS ON BP I PASS ON BP I PASS ON BP I PASS ON BP I PASS ON BP I PASS ON CTRL
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SD-79576-500
SAS SFF-8087
SAS SFF-8086
SAS SFF-8484
SFF8484 pinout
SFF-8484
cj cl a17
IPASS SAS
SFF-8086
SFF-8087
SFF-8643 pinout
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