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    S1106 Search Results

    S1106 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    8P34S1106NLGI Renesas Electronics Corporation 1:6 LVDS Output 1.8V Fanout Buffer Visit Renesas Electronics Corporation
    8P34S1106NLGI8 Renesas Electronics Corporation 1:6 LVDS Output 1.8V Fanout Buffer Visit Renesas Electronics Corporation
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    S1106 Price and Stock

    Allegro MicroSystems LLC APS11060LUAA-0SL

    MAGNETIC SWITCH UNIPOLAR 3SIP
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    DigiKey APS11060LUAA-0SL Cut Tape 7,960 1
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    APS11060LUAA-0SL Reel 7,500 500
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    Mouser Electronics APS11060LUAA-0SL 3,910
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    Renesas Electronics Corporation 8P34S1106NLGI

    IC CLK BUF 1:6 1.2GHZ 20VFQFPN
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    DigiKey 8P34S1106NLGI Tray 4,309 1
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    Avnet Americas 8P34S1106NLGI Tray 317 12 Weeks 1
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    Mouser Electronics 8P34S1106NLGI 3,186
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    Newark 8P34S1106NLGI Bulk 228 1
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    ComSIT USA 8P34S1106NLGI 328
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    Avnet Silica 8P34S1106NLGI 13 Weeks 490
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    Renesas Electronics America 8P34S1106NLGI Tray 4,309 1
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    E-Switch Inc KAS1106RT

    SWITCH SLIDE DIP SPST 0.025A 24V
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    DigiKey KAS1106RT Tube 1,068 1
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    RS KAS1106RT Bulk 21 Weeks 1,026
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    TE Connectivity PKS1106B1-4

    KNOB KNURLED W/SKRT 0.250" PLAST
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    DigiKey PKS1106B1-4 Bulk 494 1
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    Samtec Inc IPS1-106-01-L-D-RA

    CONN RCPT 12POS 0.1 GOLD PCB R/A
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    DigiKey IPS1-106-01-L-D-RA Tube 396 1
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    Mouser Electronics IPS1-106-01-L-D-RA 81
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    Avnet Abacus IPS1-106-01-L-D-RA 4 Weeks 1
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    Master Electronics IPS1-106-01-L-D-RA
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    Sager IPS1-106-01-L-D-RA 1
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    S1106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74281

    Abstract: No abstract text available
    Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested


    Original
    PDF SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 74281

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


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    PDF SiR316DP 2002/95/EC SiR316DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    diode s1 77

    Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
    Text: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28


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    PDF S1-118 S1-110 S1-103 S1-100 S1-122 S1-127 TTL11 TTL13 TTL15 TTL16 diode s1 77 S124 diode s1 diode s1 74 socket s1 S1-100 S1-128

    Si4134DY-T1-E3

    Abstract: si4134 c065
    Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original
    PDF Si4134DY 2002/95/EC Si4134DY-T1-E3 Si4134DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4134 c065

    Untitled

    Abstract: No abstract text available
    Text: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


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    PDF Si4228DY-T1-E3 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI4176DY

    Abstract: No abstract text available
    Text: Si4176DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


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    PDF Si4176DY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4176DY

    Untitled

    Abstract: No abstract text available
    Text: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


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    PDF Si4228DY-T1-E3 2002/95/EC 25trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original
    PDF Si4134DY 2002/95/EC Si4134DY-T1-E3 Si4134DY-T1-GE3 11-Mar-11

    si4176

    Abstract: SI4176DY
    Text: Si4176DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


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    PDF Si4176DY-T1-E3 2002/95/EC 11-Mar-11 si4176 SI4176DY

    4AB20

    Abstract: No abstract text available
    Text: Si4936CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) APPLICATIONS


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    PDF Si4936CDY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 4AB20

    Untitled

    Abstract: No abstract text available
    Text: Si4178DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original
    PDF Si4178DY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQD35N05-26L Vishay Siliconix Automotive N-Channel 55 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC


    Original
    PDF SQD35N05-26L AEC-Q101 2002/95/EC O-252 O-252 SQD35N05-26L-GE3 11-Mar-11

    si1424

    Abstract: No abstract text available
    Text: New Product Si1424EDH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.033 at VGS = 4.5 V 4 0.038 at VGS = 2.5 V 4 0.045 at VGS = 1.8 V 4 0.070 at VGS = 1.5 V 3 VDS (V) 20 Qg (Typ.) 6 nC • Halogen-free According to IEC 61249-2-21


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    PDF Si1424EDH 2002/95/EC OT-363 SC-70 Si1424EDH-T1-GE3 11-Mar-11 si1424

    Untitled

    Abstract: No abstract text available
    Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original
    PDF Si4134DY 2002/95/EC Si4134DY-T1-E3 Si4134DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original
    PDF Si4134DY 2002/95/EC Si4134DY-T1-E3 Si4134DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    PDF SiR316DP 2002/95/EC SiR316DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    74281

    Abstract: sup90n08-4m8p
    Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested


    Original
    PDF SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 11-Mar-11 74281 sup90n08-4m8p

    SI4276DY

    Abstract: No abstract text available
    Text: Si4276DY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel 1 30 Channel 2 30 RDS(on) () ID (A)a Qg (Typ.) 0.0153 at VGS = 10 V 8e 0.0184 at VGS = 4.5 V 8e 0.0280 at VGS = 10 V 8 0.0340 at VGS = 4.5 V 7.1 8.4


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    PDF Si4276DY-T1-E3 2002/95/EC 150hay 11-Mar-11 SI4276DY

    Untitled

    Abstract: No abstract text available
    Text: Si4804CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.022 at VGS = 10 V 8 0.027 at VGS = 4.5 V 7.9 • • • • Qg (Typ.) 7 TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested


    Original
    PDF Si4804CDY-T1-E3 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IS I P art # M o to ro la P art # C irc u it P ac k a g e D S130 D S1103 D S1104 M M AD 130 M M A D 1 103 M M AD 1104 1 2 3 S M B D 2 -7 S M B D 2 -7 S M B D 2 -7 D S 1 105 D S1106 DS1107 M M A D 1 105 M M A D 1 106 M M A D 1 107 4 5 6 S M B D 2 -7 S M B D 2 -7


    OCR Scan
    PDF S1103 S1104 S1106 DS1107 S1108 S1185 AD1185 1N4148, 1N914B, 1N5282

    Untitled

    Abstract: No abstract text available
    Text: 00 o N- <9 I J ' T 7_ ' 1.74 Part No. Poles A B S B S 1101T SB S1102T SB S1103T SB S1104T SB S1105T SB S1106T SB S1107T SB S1108T SB S1109T SB S1110T SB S1112T 1 2 3.48 6.02 8.56 11.10 13.64 16.18 18.72 21.26 23.80 26.34 31.42 2.54 5.08 7.62 10.16 12.70 15.24


    OCR Scan
    PDF 1101T S1102T S1103T S1104T S1105T S1106T S1107T S1108T S1109T S1110T

    Untitled

    Abstract: No abstract text available
    Text: nPEX' POWER PA84 • PA84A PA84S A P E X M IC R O T E C H N O L O G Y C O R P O R A T IO N • T U C S O N , A R IZ O N A • A P P L IC A T IO N S H O T L IN E 8 0 0 4 2 1 - 1 8 6 5 FEATURES • • • • • • HIGH SLEW RATE — 200V/us FAST SETTLING TIME — .1% in 1ns (PA84S)


    OCR Scan
    PDF PA84A PA84S 00V/us PA84S) BB3584JM

    SI106

    Abstract: SI106-100 SI106-101 SI106-120 SI106-121 SI106-150 SI106-151 SI106-180 SI106-181
    Text: SMT Power Inductor_ _ _ _ _ _ _ SI106 Type Features • Low profile 5.9mm max. height SMD type. ■ Unshielded. ■ Self-leads, suitable for high density mounting. ■ High energy storage and low DCR. ■ Provided with embossed carrier tape packing. ■ Ideal for power source circuits, DC-DC converter,


    OCR Scan
    PDF SI106 SI106-100 SI106-120 SI106-150 SI106-180 S1106 SI106-151 SI106-181 SI106-101 SI106-121