Contextual Info: New Product Si7463ADP Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0100 at VGS = - 10 V - 46 0.0135 at VGS = - 4.5 V - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SUM50P10-42 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () Max. ID (A) 0.042 at VGS = - 10 V - 36 0.047 at VGS = - 4.5 V - 29 Qg (Typ.) 54 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC

SiA929DJ

Contextual Info: New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.064 at VGS = - 10 V - 4.5a 0.078 at VGS = - 4.5 V - 4.5a 0.120 at VGS = - 2.5 V - 4.5a Qg (Typ.) 6.6 nC PowerPAK SC-70-6 Dual

SIR662

Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 VDS (V) 60 Qg (Typ.) 30 nC PowerPAK SO-8 D S 6.15 mm S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View

Contextual Info: SPICE Device Model SiR774DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

1117G

Contextual Info: Package Polarity z o S. £ <0 » Device Super-bright Red Rl/ Orange (E / Yellow (Y)/Super Green (G)/ Device Red (D) Bright Red (H) Amber IA) Bright Yellow (T) Bright Green IF) Package Xp= 6 6 0 nm \ p = 6 5 5 /6 9 5 nm Xp = 6 3 8 /6 1 0 nm \ p = 5 9 0 /5 8 5 nm

SUM50P10-42

Abstract: SUM50P10-42-E3
Contextual Info: SUM50P10-42 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () Max. ID (A) 0.042 at VGS = - 10 V - 36 0.047 at VGS = - 4.5 V - 29 Qg (Typ.) 54 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si4833BDY Vishay Siliconix P-Channel 30 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)a 0.068 at VGS = - 10 V - 4.6 0.110 at VGS = - 4.5 V - 3.4 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Power MOSFET

63304

Contextual Info: SiS376DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0058 at VGS = 10 V 35 0.0084 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

SIR172DP

Contextual Info: SiR172DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () 30 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 Qg (Typ.) 9.8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • Notebook CPU Core - High-Side Switch

Contextual Info: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 150 RDS(on) () at VGS = 10 V 0.052 ID (A) • TrenchFET Power MOSFET 25

Triac bt 808 600C

Abstract: w2a smd transistor omron 8567 21EN15T044 awm 2919 pinout cable specification HT 25-19 transistor movement sensor pir cd 208 Ultrasonic Atomizing Transducer Balluff ROTARY ENCODER jhd 16a
Contextual Info: 2361 Technical portal and online community for Design Engineers - www.element-14.com Sensors & Transducers Accelerometers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contrast Scanners . . . . . . . . . . . . . . . . . . . . . . . . . Current Transducers . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: SPICE Device Model SiS782DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

S1116

Contextual Info: FORM AE043 ISS1 PRODUCT DATA SHEET Comus Group of Companies Manufactured in the UK 5.0 .197 2 x 17AWG round silicone rubber insulated 200.0 (7.874) 26.5 (1.043) 2.5 (.098) ø30.0 (1.181) ø4.2 (.165) ø28.0 (1.102) Drawings not to scale All dimensions in mm (inches) nominal

Contextual Info: New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.064 at VGS = - 10 V - 4.5a 0.078 at VGS = - 4.5 V - 4.5a 0.120 at VGS = - 2.5 V - 4.5a Qg (Typ.) 6.6 nC PowerPAK SC-70-6 Dual

socket s1

Abstract: diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18
Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-90 S1-82 S1-79 S1-77 TTL1 TTL4 B2 TTL7 B3 TTL10 B4 A5 TTL12 B5 AID5 A6 TTL14 B6 AID4 A7 PVCC B7 AID0 A8 PVSP B8 AID1 A9 TTL18 B9 AID2 A10 AGND B10 AID3 A11 TTL44 B11 AID7 A12 AGND B12 AGND A13 AGND B13 CGND

Contextual Info: New Product Si7463ADP Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0100 at VGS = - 10 V - 46 0.0135 at VGS = - 4.5 V - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SiR172DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () 30 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 Qg (Typ.) 9.8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • Notebook CPU Core - High-Side Switch

Contextual Info: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC

crimper CT 3508

Abstract: 490-040 1555.N0375.08 g2206 THERMAL Fuse m20 tf 115 c MC3050
Contextual Info: American Electrical, Inc. Full Line Catalog COMPANY HISTORY American Electrical, Inc. was founded in 1997 by Thomas McCormick, former Vice President of Sales for Weidmuller, Inc. The Company concept was born over lunch with fellow associates literally on a napkin.

SUD45P04-16

Contextual Info: SUD45P04-16P Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0162 at VGS = - 10 V - 36 0.0230 at VGS = - 4.5 V - 24 Qg (Typ.) 67 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

057 98B

Contextual Info: SiZ300DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 ID (A)a Qg (Typ.) RDS(on) () 0.0240 at VGS = 10 V 11 0.0320 at VGS = 4.5 V 11 0.0110 at VGS = 10 V

Contextual Info: SiP32411 Vishay Siliconix 2 A, 1.2 V, Slew Rate Controlled Load Switch DESCRIPTION FEATURES The SiP32411 is a slew rate controlled load switch that is designed for 1.1 V to 5.5 V operation. The device guarantees low switch on-resistance at 1.2 V input. It features a controlled soft-on slew rate of typical