sd 431 transistor
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4058-S15-AY
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2SK4058
2SK4058
2SK4058-S15-AY
O-251
O-252
2SK4058-ZK-E1-AY
2SK4058-ZK-E2-AY
O-251)
sd 431 transistor
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2SK4069
Abstract: mp3zk
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4069 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4069 is N-channel MOS FET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4069-S15-AY
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2SK4069
2SK4069
2SK4069-S15-AY
O-251
O-252
2SK4069-ZK-E1-AY
2SK4069-ZK-E2-AY
O-251)
mp3zk
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4057-S15-AY
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2SK4057
2SK4057
2SK4057-S15-AY
2SK4057-ZK-E1-AY
2SK4057-ZK-E2-AY
O-251
O-252
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2SK4069
Abstract: mp3zk
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4069 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4069 is N-channel MOS FET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4069-S15-AY
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Original
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2SK4069
2SK4069
2SK4069-S15-AY
O-251
O-252
2SK4069-ZK-E1-AY
2SK4069-ZK-E2-AY
O-251)
mp3zk
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3113B-S15-AY
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2SK3113B
2SK3113B
2SK3113B-S15-AY
O-251
O-252
2SK3113B-ZK-E1-AY
O-251)
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3113B-S15-AY
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Original
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2SK3113B
2SK3113B
2SK3113B-S15-AY
O-251
O-252
2SK3113B-ZK-E1-AY
O-251)
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B0813
Abstract: PT9787 8C440 MJ3237 trw PT9787 MM4048 MJE42C MJ2841 MOTOROLA MM1758 mmt2857
Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 NA31KY NA31MH NA31 MY SK3248 NA31KI NA31MI NA31KJ NA31MJ ~~~~g: 25 30 2NS204 S15-28 SMl5501 SMl550S SMl5511 SMl5901 SMl590S SMl5911 ~~~j~~ 35 40 80Y10 80Y10 PT9787 PT9787A 2N4431 2S022S 2S0226 SOT4301
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2SC109S
2NS714
92PU01
2S0180S
MPSU01
NSOU01
92GU01
NA31KY
B0813
PT9787
8C440
MJ3237
trw PT9787
MM4048
MJE42C
MJ2841 MOTOROLA
MM1758
mmt2857
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marking ss14
Abstract: ss14 do-214ac SS14 marking SS15 sma ss14 sma SS15 SS16 ss12 marking ss14 do-214ac sma SS13
Text: LESHAN RADIO COMPANY, LTD. SS12 – SS16 1A 1A SCHOTTKY SMA DIODES TYPE Marking SS12 SS13 SS14 SS15 SS16 20 30 40 50 60 S12 S13 S14 S15 S16 V F V IF (A) VRRM(V) 0.50 0.50 0.50 0.70 0.70 1.0 IRMI(µA) IP8M(A) 1000 Package Dimensions Trr(ns) – – – –
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214AC
-SS15
50mVp-p
marking ss14
ss14 do-214ac
SS14
marking SS15 sma
ss14 sma
SS15
SS16
ss12 marking
ss14 do-214ac sma
SS13
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VID125-12P1
Abstract: No abstract text available
Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 100/12* Short Circuit SOA Capability Square RBSOA 90 A 1200 V 2.8 V Preliminary Data Sheet S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot ECO-TOPTM 1 A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1
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121T120
125-12P1
VID125-12P1
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ECO-TOP
Abstract: DWLP55-12
Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 75/12* Preliminary Data Sheet S15 R15 A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 V3 ECO-TOPTM 1 V6 typical picture, for pin configuration see outline drawing IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK
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81T120
75-12P1
ECO-TOP
DWLP55-12
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transistor opm
Abstract: inductive sensor SYMBOL
Text: IGBT Module PSII 100/06* IC80 = VCES = VCE sat typ.= Short Circuit SOA Capability Square RBSOA 80 A 600 V 2.3 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol A15 A7 A9 G15 V12 V13 N15 V9 V10 D1
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Untitled
Abstract: No abstract text available
Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 30/06* Short Circuit SOA Capability Square RBSOA 29 A 600 V 2.4 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 typical picture, for pin configuration see outline
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25T60
50-06P1
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PDF
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POWERSEM
Abstract: No abstract text available
Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 50/06* Preliminary Data Sheet 48 A 600 V 2.3 V S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff A15 A7 A9 G15 V12 V13 N15 V9 V10
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42T60
75-06P1
POWERSEM
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PDF
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Untitled
Abstract: No abstract text available
Text: ECO-TOPTM 1 IGBT Module IC80 = VCES = VCE sat typ. = PSII 30/12* Short Circuit SOA Capability Square RBSOA 33 A 1200 V 3.1 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 Symbol Conditions VCES TVJ = 25°C to 150°C
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42T120
50-12P1
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IQ64120QGx04
Abstract: No abstract text available
Text: Technical Specification IQ64xxxQGXxx 1.8-48V 50W 3000Vdc Quarter-brick Continuous Input Outputs Max Power REINFORCED Insulation DC-DC Converter a pu d bl va ic n at ce io d n 18-135V O UT 18 64 -1 0 35 33 V QG IN 3. C1 3V 5 N R @ S15 G A The InQor quarter-brick converter series is composed
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IQ64xxxQGXxx
3000Vdc
8-135V
Featu050
IQ64120QGx04
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brake rectifier motor
Abstract: No abstract text available
Text: Converter - Brake - Inverter Module PSIPM 60/12 Preliminary Data Sheet C1 V15 U15 H15 A15 A10 A5 L15 J15 D15 Q15 O15 L1 F15 F1 V4 N15 S15 V11 V13 P1 R1 N1 U1 V1 H1 V7 t e e h s r e a t d a un d l e l t i v t i n t s e a t t m c n te odu elop r p dev Three Phase
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C80C49
Abstract: 80C49 W2005
Text: Converter - Brake - Inverter Module PSIPM 35/12 Preliminary Data Sheet C1 V15 U15 H15 A15 A10 A5 N15 L15 J15 D15 Q15 O15 L1 F15 F1 H1 S15 V11 V13 P1 R1 N1 U1 V1 t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n p te odu elo pr dev V4 V7 Three Phase
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Untitled
Abstract: No abstract text available
Text: Converter - Brake - Inverter Module PSIPM 30/06 Preliminary Data Sheet C1 V15 U15 H15 A15 A10 A5 L15 J15 D15 V4 Q15 O15 L1 F15 F1 N15 S15 V11 V13 P1 R1 N1 U1 V1 H1 V7 t e e h r s e a t d a un d l e l t i v t i n t s e a t t m c n te odu elop r p dev Three Phase
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Untitled
Abstract: No abstract text available
Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 75/06* Preliminary Data Sheet S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 V3 ECO-TOPTM 1 V6 t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev Symbol
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Untitled
Abstract: No abstract text available
Text: Converter - Brake - Inverter Module PSIPM 100/06 Preliminary Data Sheet C1 V15 U15 H15 A15 A10 L15 J15 D15 A5 N15 Q15 O15 L1 F15 F1 H1 S15 V11 V13 P1 R1 N1 U1 V1 t e e h s r e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev V4 V7 Three Phase
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Untitled
Abstract: No abstract text available
Text: Converter - Brake - Inverter Module PSIPM 50/06 Preliminary Data Sheet C1 V15 U15 H15 A15 A10 L15 J15 D15 A5 V4 Q15 O15 L1 F15 F1 N15 H1 S15 V11 V13 P1 R1 N1 U1 V1 V7 t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev Three Phase
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I2063
Abstract: 150a gto ka s15 DO-205AC
Text: Bulletin I2063 rev. A 09/94 SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 150A 1.0 to 1.5 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics
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I2063
SD153N/R
DO-30
SD153N/R
SD153N/R.
150a gto
ka s15
DO-205AC
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Untitled
Abstract: No abstract text available
Text: HD-LI N X G S15 0 8 HDTV Cable Driver GENNUM A T I N PRELIMINARY DATA SHEET FEATURES DESCRIPTION • SMPTE 292M Compliant The GS1508 is a first generation very high speed bipolar integrated circuit designed to drive two 75 Q co-axial cables. The GS1508 is a SMPTE 292M com pliant cable
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OCR Scan
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GS1508
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DIODE marking Sl
Abstract: s6 68a diode diode marking b2 b1391 diode MARKING A9 IC MARKING 27A 6 PIN MARKING 62Z diode MARKING b3 S6 68A 621 marking diode
Text: SURFACE P A K {"J x i — • M Type No. HRW0202A HRW0202B HRW0203A HRW0302A HRW05Û2A HRW0503A HRW0702A HRW0703A HSM83 HSM88AS HSM88ASR HSM88WA HSM88WK HSM1Q7S HSM109WK Markig SI 7 S18 S5 S11 S10 S6 S15 @4 04 S8 F7 C1 04 @4 02 C3 C7 01 06 C4 C5 05 02 05 S7
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HRW0202A
HRW0202B
HRW0203A
HRW0302A
HRW05
HRW0503A
HRW0702A
HRW0703A
HSM83
HSM88AS
DIODE marking Sl
s6 68a diode
diode marking b2
b1391
diode MARKING A9
IC MARKING 27A 6 PIN
MARKING 62Z
diode MARKING b3
S6 68A
621 marking diode
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