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    S1523 TRANSISTOR Search Results

    S1523 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    S1523 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HK100522NJ

    Abstract: R0254 SKY65038-70LF S1523 transistor
    Text: DATA SHEET SKY65038-70LF: 0.25-6.0 GHz Low Noise Amplifier Applications Description • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations Skyworks SKY65038-70LF is a general purpose, broadband Low Noise Amplifier LNA . The device is fabricated from Skyworks


    Original
    PDF SKY65038-70LF: SKY65038-70LF OT-89) 200794B HK100522NJ R0254 S1523 transistor

    S1523

    Abstract: S1523 transistor SK038 GRM1555C1H820JZ01 SKY65038-70LF j0398 S1522 78662 GRM1555C1H100JZ01 HK10056N8
    Text: DATA SHEET SKY65038-70LF: 0.25-6.0 GHz Low Noise Amplifier Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x Cable television 1 Features 2 RF Input 3 Ground RF Output x Broadband frequency range: 0.25 to 6.0 GHz


    Original
    PDF SKY65038-70LF: SKY65038-70LF OT-89 J-STD-020) 200794C S1523 S1523 transistor SK038 GRM1555C1H820JZ01 j0398 S1522 78662 GRM1555C1H100JZ01 HK10056N8

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan
    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


    OCR Scan
    PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d