h22e
Abstract: No abstract text available
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP Type Marking SMBT2222A/MMBT2222A s1P 1 Pin Configuration 1=B 2=E Package
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SMBT2222A/MMBT2222A
SMBT2907AW
SMBT2222A/MMBT2222A
h22e
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npn 2222 transistor
Abstract: s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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SMBT2222A
SMBT2907A
VPS05161
2222/A
EHP00744
EHP00745
Jul-11-2001
npn 2222 transistor
s1P SOT23
SMBT2222A SOT23
SMBT2222A
SMBT2907A
MARKING s1P
MARKING 1B SOT23
EHN00056
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PDF
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br 2222 npn
Abstract: SMBT2222A SMBT2907A
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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SMBT2222A
SMBT2907A
VPS05161
2222/A
EHP00744
EHP00745
May-29-2001
br 2222 npn
SMBT2222A
SMBT2907A
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PDF
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h11E
Abstract: No abstract text available
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P
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SMBT2222A/MMBT2222A
SMBT2907A
MMBT2907A
SMBT2222A/MMBT2222A
h11E
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PDF
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SMBT2907AW
Abstract: MARKING s1P smbt2222a sot23 marking code S1p MARKING BCW66 77 ic marking code transistor marking code 24 24 marking code transistor transf SMBT2222A SOT23
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration
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SMBT2222A/MMBT2222A
SMBT2907AW
SMBT2222A/MMBT2222A
BCW66
SMBT2907AW
MARKING s1P
smbt2222a sot23 marking code
S1p MARKING
BCW66
77 ic marking code
transistor marking code 24
24 marking code transistor
transf
SMBT2222A SOT23
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PDF
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s1P SOT23
Abstract: 619 SOT23-3 h11e
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration
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SMBT2222A/MMBT2222A
SMBT2907AW
SMBT2222A/MMBT2222A
s1P SOT23
619 SOT23-3
h11e
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PDF
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MARKING s1P
Abstract: No abstract text available
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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SMBT2222A/
MMBT2222A
SMBT2907A
VPS05161
MARKING s1P
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PDF
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Untitled
Abstract: No abstract text available
Text: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol
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FJX2222A
325mW
OT-323
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transistor s1p
Abstract: MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor
Text: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol
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FJX2222A
325mW
OT-323
transistor s1p
MARKING S1P
S1P transistor
FJX2222A
ESBC
Fairchild dual NPN silicon transistor
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PDF
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npn 2222 transistor
Abstract: MMBT2222A SMBT2222A SMBT2907A MARKING s1P
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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SMBT2222A/
MMBT2222A
SMBT2907A
VPS05161
2222/A
EHP00744
EHP00745
npn 2222 transistor
MMBT2222A
SMBT2222A
SMBT2907A
MARKING s1P
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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SMBT2222A/
MMBT2222A
SMBT2907A
VPS05161
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PDF
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MARKING s1P
Abstract: 99V0
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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SMBT2222A
SMBT2907A
VPS05161
Nov-30-2001
2222/A
EHP00742
EHP00743
MARKING s1P
99V0
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PDF
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Motorola transistors MRF
Abstract: motorola MRF agilent ads balun LDMOS push pull EB212 MRF19125 MRF21180
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by EB212/D SEMICONDUCTOR ENGINEERING BULLETIN EB212 Using Data Sheet Impedances for RF LDMOS Devices Prepared by: Darin Wagner Motorola Semiconductor Products Sector Freescale Semiconductor, Inc.
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EB212/D
EB212
Motorola transistors MRF
motorola MRF
agilent ads balun
LDMOS push pull
EB212
MRF19125
MRF21180
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PDF
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agilent ads balun
Abstract: EB212 MRF19125 MRF21180 J493 advanced design system
Text: Freescale Semiconductor Engineering Bulletin EB212 Rev. 0, 1/2004 Using Data Sheet Impedances for RF LDMOS Devices By: Darin Wagner INTRODUCTION This document explains the format used by Freescale for presenting LDMOS impedance information for both single - ended and push - pull devices on RF Power data
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EB212
agilent ads balun
EB212
MRF19125
MRF21180
J493
advanced design system
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PDF
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transistor s1p
Abstract: S1P transistor S1p MARKING F1 SOT-323
Text: FJX2222A FJX2222A General Purpose Transistor 2 1 NPN Epitaxial Silicon Transistor SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCES Collector-Emitter Voltage
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FJX2222A
OT-323
transistor s1p
S1P transistor
S1p MARKING
F1 SOT-323
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2222 NPN
Abstract: br 2222 npn npn 2222 2222a 2222 2907 pnp 2222 A DSA0032624 equivalent of 2222 NPN Q68000-A6473
Text: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration
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Q68000-A6481
Q68000-A6473
OT-23
2222 NPN
br 2222 npn
npn 2222
2222a
2222
2907 pnp
2222 A
DSA0032624
equivalent of 2222 NPN
Q68000-A6473
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PDF
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MARKING s1P
Abstract: FJX2222A transistor s1p
Text: FJX2222A FJX2222A General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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FJX2222A
325mW
OT-323
MARKING s1P
FJX2222A
transistor s1p
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PDF
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2222a
Abstract: br 2222 npn 2222 A npn 2222 Q68000-A6473 Q68000-A6481 tr 2222 2222av marking code sot-23 697 NPN transistors sot-23 26
Text: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● 2 3 1 Type Marking Ordering Code (tape and reel) Pin Configuration
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Q68000-A6481
Q68000-A6473
OT-23
2222a
br 2222 npn
2222 A
npn 2222
Q68000-A6473
Q68000-A6481
tr 2222
2222av
marking code sot-23 697
NPN transistors sot-23 26
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PDF
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2222a
Abstract: npn 2222 2222 NPN br 2222 npn 2222 A 2222
Text: NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: SMBT 2907, SMBT 2907 A PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration
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Q68000-A6481
Q68000-A6473
OT-23
2222a
npn 2222
2222 NPN
br 2222 npn
2222 A
2222
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PDF
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MARKING s1P
Abstract: FJX2222A transistor s1p
Text: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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FJX2222A
325mW
OT-323
75opment.
MARKING s1P
FJX2222A
transistor s1p
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PDF
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MARKING s1P
Abstract: FJX2222A
Text: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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FJX2222A
325mW
OT-323
75ner
MARKING s1P
FJX2222A
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PDF
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CHT2222APT
Abstract: transistor s1p
Text: CHENMKO ENTERPRISE CO.,LTD CHT2222APT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.
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CHT2222APT
OT-23
OT-23)
600mA)
200ns
CHT2222APT
transistor s1p
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PDF
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transistor s1p
Abstract: CHT4401PT SOT23 timer ic S1p MARKING
Text: CHENMKO ENTERPRISE CO.,LTD CHT4401PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Low voltage Max.=40V . * High saturation current capability.
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CHT4401PT
OT-23
600mA)
200ns
transistor s1p
CHT4401PT
SOT23 timer ic
S1p MARKING
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2907, SMBT 2907 A PNP Type Marking Ordering Code (tape and reel) PinC Contigui ation
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OCR Scan
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Q68000-A6481
Q68000-A6473
OT-23
2222/A
fi235bD5
0155S2S
a235b05
012552b
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PDF
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