A988
Abstract: DSP56800 FE8B SR-0005
Text: Instruction Set Details Descriptions MPY MPY Signed Multiply Operation: + S1 * S2 → D no parallel move S1 * S2 → D (one parallel move) S1 * S2 → D (two parallel reads) Assembler Syntax: MPY (+)S1,S2,D MPY S1,S2,D MPY S1,S2,D (no parallel move) (one parallel move)
|
Original
|
16-bit
36-bit
DSP56800
A988
FE8B
SR-0005
|
PDF
|
MB91F467c
Abstract: MB91F467B max3232acse MB91F467BA D9 female RXD TXD MP3 an17 c33 diode 142 19C P181 JP49
Text: 6 C23 10nF GND VDD5 C45 10nF VCC GND Pin4 Pin7 Pin10 Pin13 Pin16 Pin21 Pin24 Pin27 Pin30 Pin33 Pin38 Pin41 Pin52 Pin57 Pin112 Pin115 Pin120 Pin123 Pin128 Pin131 Pin134 Pin139 Pin142 GND CON72 8 7 6 5 Q2 R11 [R] GND [S2] Mode optional C18 1µ C47 22pF Pin82
|
Original
|
Pin10
Pin13
Pin16
Pin21
Pin24
Pin27
Pin30
Pin33
Pin38
Pin41
MB91F467c
MB91F467B
max3232acse
MB91F467BA
D9 female
RXD TXD MP3
an17 c33
diode 142 19C
P181
JP49
|
PDF
|
LCM151
Abstract: DP15 11010 dp11 LCM103 S4 9C DP10 2f 1001 11E11C
Text: LCM151 液晶显示模块 1 LCM151 RAM 对应显示笔段表 自左→右 8 为 1→15 位,DP 为小数点 S1-S8 见 LCD 图 D3 D2 D1 D0 ADDR D3 D2 S1 S2 S3 S4 00000 8A 8B 1F 1G 1E 1D 00001 9F 9G 1A 1B 1C DP1 00010 9A 9B 2F 2G 2E 2D 00011 10F 10G 2A 2B 2C
|
Original
|
LCM151
LCM151
LCM103
LCM103,
DP15
11010
dp11
LCM103
S4 9C
DP10
2f 1001
11E11C
|
PDF
|
M5M5512FP-70LL
Abstract: SS12R 32P3H- E 1008BP-7QL
Text: Memory Configuration Memoty capacity Max. access time us Function mod» 45 with (SÏ, S2, ÒE) Icc (Power down) = 10 /x A (max) 55 = 0.1 mA (typ) 70 512K 64Kx8 45 i with (SÏ. S2, ÔE) Icc (Power down) = 5 ft A (max) = 0.1 !x 55 A (typ) 70 55 with (SÏ, S2, OË)
|
OCR Scan
|
M5MSS12P-45LL
M5M5512FP-45UL
5512VP-45LL
M5M5512RV-45LL
12KV-45LL
S512KR-45LL
M5M5512P-55U.
M5M5512VP-55LL
M5MS512RV-55UM5M55I2KV-55LL
12KR-5SLL
M5M5512FP-70LL
SS12R
32P3H- E
1008BP-7QL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 71 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 71 S2 Vbs 60 V h> 14 A ^DS on 0.1 n Package Ordering Code TO-220 AB C67078-S1316-A9 Maximum Ratings Parameter Symbol Continuous drain current
|
OCR Scan
|
O-220
C67078-S1316-A9
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 71 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type V'ds BUZ 71 S2 60 V b 14A ^DS on Package Ordering Code 0.1 Q TO-220 AB C67078-S1316-A9 Maximum Ratings Parameter Symbol Values Continuous drain current
|
OCR Scan
|
O-220
C67078-S1316-A9
235bQ5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 346 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 S2 Vbs 60 V b ^DS on Package Ordering Code 58 A 0.018 n TO-218AA C67078-S3120-A4 Maximum Ratings Parameter Symbol Continuous drain current
|
OCR Scan
|
O-218AA
C67078-S3120-A4
fi53SbD5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS PROFET BTS 640 S2 Smart Sense High-Side Power Switch Features Product Summary • • • • • • • Operating voltage On-state resistance Load current ISO Current limitation • • • • • • Short circuit protection Current limitation
|
OCR Scan
|
systems20)
1998-Aug-28
|
PDF
|
S3H-02
Abstract: S19C s3vc0 S2LA20 s19j S6K20 S51A CI 576 RAS 0510 S19E
Text: -71 S1K20H S1K40 S2K20 S2K20H S2K40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V20 S2V60 S3 H-02 S3K40 S3L20U S3L40 S3L60 S3LA20 S3V20 S3V60 S6K20 S6K20H S6K20R S6K40 S6K40R S16L60 S19C S19D S19E S19G S1 9J S19L S20C S20D S20E S20G S2 0J S20L S20L60 S30L40 S3QL60 S51A
|
OCR Scan
|
S1K20H
100ns
S1K40
300ns
S2K20
S2K20H
S2K40
S3H-02
S19C
s3vc0
S2LA20
s19j
S6K20
S51A
CI 576
RAS 0510
S19E
|
PDF
|
S3H-02
Abstract: S19C s3h 02 S52A S2LA20 S20G S19G s19j S3LA20 S52B
Text: - -71 S1K20H S1K40 S2K20 S2K20H S2K40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V20 S2V60 S3 H-02 S3K40 S3L20U S3L40 S3L60 S3LA20 S3V20 S3V60 S6K20 S6K20H S6K20R S6K40 S6K40R S16L60 S19C S19D S19E S19G S1 9J S19L S20C S20D S20E S20G S2 0J S20L S20L60 S30L40 S3QL60
|
OCR Scan
|
S1K20H
100ns
S1K40
300ns
S2K20
S2K20H
S2K40
S3H-02
S19C
s3h 02
S52A
S2LA20
S20G
S19G
s19j
S3LA20
S52B
|
PDF
|
BUZ11S2
Abstract: buz11 siemens
Text: SIEMENS BUZ11S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vfcs to ^JS on Package Ordering Code BUZ 11 S2 60 V 30 A 0.04 £2 TO-220 AB C67078-S1301-A5 Maximum Ratings Parameter Symbol Continuous drain current
|
OCR Scan
|
BUZ11S2
O-220
C67078-S1301-A5
BUZ11
BUZ11S2
buz11 siemens
|
PDF
|
8DM1
Abstract: No abstract text available
Text: sony Dual 8 : . CXB1544Q-Y 1 Multiplexer with Latch Description Pin Assignm ent The CXB1544Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers with transparent Latched outputs. The data select S 0-S2 inputs determine which data input is enabled. When
|
OCR Scan
|
CXB1544Q-Y
CXB1544Q-Y
321LEN2
8DM1
|
PDF
|
t8001
Abstract: 100CL marking ZLP
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AD 00 ALL RIGHTS RESERVED. 0.51 [.020 ] TYP STANDOFFS R E VIS IO N S LTR DESCRIPTION S1 S2 B DATE DWN REVISED PER E C O - 0 8 - 0 1 9 0 9 2
|
OCR Scan
|
eco-08-019092
ec0-09-021
08jum[
27jum[
31MAR2000
t8001
100CL
marking ZLP
|
PDF
|
8070N
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistors • • • N channel Enhancement mode Avalanche-rated Type Vos Io BUZ 16 50 V 48 A 0.018 Q BUZ 16 S2 60 V 48 A ¡0 .0 1 8 Q R D S o n M axim um Ratings Param eter Continuous drain current , T C = 19 'C Pulsed drain current, Tc = 2 5 ‘ C
|
OCR Scan
|
O-204
8070N
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: O N ' I M V d O U 1-3 £ B ¿ 6 P 3 H 0 ± S n 0 L - Z ’A3tí L L - 0 31V0S £ V r 001 3Z1S .£* E ‘0* S2*0* C'O* Í ? C2 frsw fe?/?7c/ 'L ^ «7 rr/ y - f is XHD 31VO ÜHO «O idlAIH >l>d -«o a ,# . E«-3Rf- <n c * - ^ ' .¿- m . 9 0 / I ¿ As cu - ír 'X t ¿z—
|
OCR Scan
|
31V0S
M0773A
M07/V
|
PDF
|
31VO
Abstract: No abstract text available
Text: O N ' I M V d O U 3 H 0 ± S n 0 1-3 L - Z ’A3tí £ B 6 P L L- 0 ¿ 31V0S £ V r 001 3Z1S .£* E ‘0* S2*0* C'O* Í? C2 frsw fe?/?7c/ «7 XHD 31VO ÜHO «O idlAIH >l>d -«o ít&J ' L ^ r r / y - f i s a,#. E«-3Rf- <n c * -^ ' .¿- m . 9 0 / I ¿ As cu -ír'Xt ¿z—
|
OCR Scan
|
31V0S
M0773A
311HM
31VO
|
PDF
|
L78LR05
Abstract: L78LR05B
Text: SANYO SEMICONDUCTOR C O RP ÍEE 7^^70713 □□ □ 34öh T-S2-K- 3> L78LR05 M o n olithic Linear IC 3103 * D I 5V 150mA 5-Pin Voltage Regulator ' 26 2 2 The L78LR05 is a voltage regulator IC that performs the reset signal generating function when the power supply of a microcomputer system is turned ON/OFF. The
|
OCR Scan
|
L78LR05
150mA
L78LR05
i707t.
D034flc
T-SS-ll-13
50x50x0
L78LR05B
|
PDF
|
MIL-STD-1750
Abstract: No abstract text available
Text: GEC P L E S S E Y SEMICONDS 43E D • 37 b ñ S2 2 DQIMSS? H « P L S B G E C P L E S S E Y ma317so mSsMl m cM W W m 'm im w m High Performance MIL-STD-1750 Microprocessor Advance data S10103AD S Issue 2.3 O ctober 1990 Features MPROEN PEN EXADEN FLT7N SYSFN
|
OCR Scan
|
ma317so
MIL-STD-1750
S10103AD
64kWord
INT02N
INT08N
INT10N
INT11N
INT13N
|
PDF
|
BUZ 140 L
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power MOS Transistors VDS /q ^D S o n • • • • BUZ 16 BUZ 346 BUZ 346 S2 = 50 . . . 60 V = 48 . . . 58 A = 0.018 Q T O -2 04 AE (BUZ 16) N channel E nhancem ent mode A valanche-proof Packages: TO -204A E (TO-3) T O -2 18 A A (T O P -3)1)
|
OCR Scan
|
-204A
7078-A
020-A
31-A2
BUZ 140 L
|
PDF
|
buz71a
Abstract: A1316-A3 BUZ71 SM 71A diode diode L 2 . 71 sm 71a
Text: S IE M E N S BUZ 71 BUZ 71 A SIPMOS Power MOS Transistors ^D S = Id = ^ D S o n = • • • • BUZ 71 S2 50 . . 60 V 13 . . 14 A 0.1 . .0 .1 2 N channel Enhancem ent mode A valanche-proof Package: TO -220 A B 1) Type Ordering code BUZ 71 C 67078-S 1 31 6-A 2
|
OCR Scan
|
67078-S
7078-S
316-A
buz71a
A1316-A3
BUZ71
SM 71A diode
diode L 2 . 71
sm 71a
|
PDF
|
357N
Abstract: AN6357N AN6359N diagram LG TV circuits LHLT
Text: AN6357N, AN6359N e r e s ie AN 6357N , AN6359N V T R + — X 0 Ï & /V T R C a p sta n In ter fa ce C ir c u its U nit ^ mm AN6357N, AN6359N li VTR * -r 7" x ? > -f > ? 7 i - x J • 4# « “+i * s2 • AN6357N , AN6359N l± >X<nmifet: M L X i> 4 FG r >~r
|
OCR Scan
|
AN6357N,
AN6359N
AN6359N
AN6357N
20-Lead
357N
AN6357N
diagram LG TV circuits
LHLT
|
PDF
|
im06
Abstract: M54514AP TRANSISTOR 751 ba4 transistor
Text: b3E • ^4^027 DOm-îbS M IT S U B IS H I b S2 m v \ 1 1 3 M IT S U B IS H I BIPO LA R D IG IT A L ICs M54514AP DGTL L 0 6 I C 7 -U N IT 50mA TR A N S IS TO R ARRAY DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M54514AP, 7-channel sink drivers, consists of 7 NPN
|
OCR Scan
|
L06IC)
M54514AP
M54514AP,
M54514AP
im06
TRANSISTOR 751
ba4 transistor
|
PDF
|
733 op amp
Abstract: AN6359N AN6359 AN6357N 5SJ6 357N GI op amp
Text: AN6357N, AN6359N e r e s ie AN 6357N , AN6359N V T R + — X 0 Ï & /V T R C a p s ta n In te rfa c e C irc u its U n it ^ mm AN6357N, AN6359N li VTR * -r 7" x ? > -f > ? 7 i - x J • 4# « “+i * s2 • AN6357N , AN6359N l± >X<nmifet: M L X i> 4 FG r > ~r
|
OCR Scan
|
AN6357N,
AN6359N
AN6359N
AN6357N
20-Lead
733 op amp
AN6359
AN6357N
5SJ6
357N
GI op amp
|
PDF
|
S4B-01
Abstract: S5KC20R C 547c S3840 S1ZAK20 S1ZAK40 S1ZAL20 S1ZB20 S1ZB60 S2HB20Z
Text: - 138- » X m £ [s i # & iË * [S I # tt * B S n % S1 Z A K 2 0 S1 Z A K 4 0 S1ZAL20 S1ZA S4 S1ZB2 0 fr 7 c * t « tc S t® 7 G S1ZB6 0 S2H B20Z S2VB20 S2 V B 6 0 S3 B 4 Q - 0 2 ff« 7 C S3B40-04 S3B40-06 S3B40-08 S3B4 0 - 1 0 S3B4 0-12 •* >; 'J * '
|
OCR Scan
|
S1ZAK20
S1ZAK40
S1ZAL20
S1ZB20
S1ZB60
S2HB20Z
S5VB60
S10FFD02
50MAX
-15MAX-|
S4B-01
S5KC20R
C 547c
S3840
S1ZAK40
S1ZB20
|
PDF
|
