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    S22 PACKAGE EQUIVALENT Search Results

    S22 PACKAGE EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    S22 PACKAGE EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1126A FH105A RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6 http://onsemi.com Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package


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    PDF ENA1126A FH105A FH105A 2SC5245A, A1126-8/8

    marking 579 sot363

    Abstract: No abstract text available
    Text: Ordering number : ENA1125A FH102A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz NPN Dual MCP6 Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one package


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    PDF ENA1125A FH102A FH102A 2SC5226A, A1125-8/8 marking 579 sot363

    702 transistor smd code

    Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
    Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


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    PDF HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 702 transistor smd code HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752

    equivalent ZO 607

    Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor
    Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


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    PDF HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 equivalent ZO 607 2sc5872 2SC5849 HTT1132E 702 smd transistor

    ACA2604RS29P8

    Abstract: ACA2604R aca2604 ACA2601 triplex
    Text: ACA2604 Fiber-to-the-Home RF Amplifier ADVANCED PRODUCT INFORMATION - Rev 0.2 FEATURES • 50 - 870 MHz Operating Frequency • High Linearity: 65 dBc CTB/CSO 79 Chan. • Low Equivalent Input Noise: 4.5 pA/rtHz • 22 dB Gain Adjust AC A • 400  Differential Input Impedance: No


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    PDF ACA2604 ACA2601 ACA2604 ACA2604RS29P8 ACA2604R ACA2601 triplex

    1008CS-331XJLB

    Abstract: ACA2604 MURATA TRIPLEXER BLM15HD102SN1D GRM155R71H471KA01D ACA2601 GRM1885C1H102JA01D GRM1885C1H1R0CZ01D GRM1885C1HR50CZ01D GRM188R61C105KA93D
    Text: ACA2604 Fiber-to-the-Home RF Amplifier Data Sheet - Rev 2.1 FEATURES • 50 - 870 MHz Operating Frequency • High Linearity: 65 dBc CTB/CSO 79 Chan. • Low Equivalent Input Noise: 4.5 pA/rtHz • 22 dB Gain Adjust AC A • 400  Differential Input Impedance: No


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    PDF ACA2604 ACA2601 ACA2604 1008CS-331XJLB MURATA TRIPLEXER BLM15HD102SN1D GRM155R71H471KA01D ACA2601 GRM1885C1H102JA01D GRM1885C1H1R0CZ01D GRM1885C1HR50CZ01D GRM188R61C105KA93D

    ACA2604R

    Abstract: MURATA TRIPLEXER
    Text: ACA2604 Fiber-to-the-Home RF Amplifier DATA SHEET - Rev 2.0 FEATURES • 50 - 870 MHz Operating Frequency • High Linearity: 65 dBc CTB/CSO 79 Chan. • Low Equivalent Input Noise: 4.5 pA/rtHz • 22 dB Gain Adjust AC A • 400  Differential Input Impedance: No


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    PDF ACA2604 ACA2601 ACA2604 ACA2604R MURATA TRIPLEXER

    2SA1424

    Abstract: NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent
    Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES High fT _0.2 2.8+ Equivalent NPN transistor is the 2SC2351. • Alternative of the 2SA1424. _0.2 2.9+ Symbol Rating Unit Collector to Base Voltage


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    PDF 2SA1978 2SC2351. 2SA1424. 2SA1424 NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent

    pmb6250

    Abstract: smarti 6250 ao21 pmb-6250 52863 PMB 2362 pmb 6250 smarti P-TSSOP-10 PMB2362
    Text: Wireless Components Dual LNA PMB 2362 Version 1.1 Specification January 2000 preliminary CONFIDENTIAL Revision History: Current Version: January 2000 Previous Version:Data Sheet Page in previous Version Page (in current Version) Subjects (major changes since last revision)


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    PDF 82GHz: pmb6250 smarti 6250 ao21 pmb-6250 52863 PMB 2362 pmb 6250 smarti P-TSSOP-10 PMB2362

    2SC5245

    Abstract: 2SC5415 FH203 IT00483 18896
    Text: Ordering number:ENN6179 NPN Epitaxial Planar Silicon Composite Transistor FH203 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6


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    PDF ENN6179 FH203 FH203] 2SC5245) 2SC5415) FH203 2SC5245 2SC5415, 2SC5415 IT00483 18896

    IT00483

    Abstract: 2SC5245 2SC5415 FH203 IT00491
    Text: Ordering number:ENN6179 NPN Epitaxial Planar Silicon Composite Transistor FH203 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6


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    PDF ENN6179 FH203 FH203] 2SC5245) 2SC5415) FH203 2SC5245 2SC5415, IT00483 2SC5415 IT00491

    CGB8002-SC

    Abstract: CGB8002-SC-0G00 CGB8002-SC-0G0T
    Text: DC-2.8 GHz InGaP HBT 3.3V, Matched Gain Block Amplifier April 2008 - Rev 28-Apr-08 CGB8002-SC Features Functional Block Diagram SOT-89 14 dBm Linear Power @ 2140 MHz 17 dB Gain @ 2140 MHz 15 dB Gain @ 2700 MHz 37dBm OIP3 @ 2700 MHz 22 dBm P1dB @ 2140 MHz


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    PDF 28-Apr-08 CGB8002-SC 37dBm OT-89 CGB8002-SC CGB8002-SC-0G00 CGB8002-SC-0G0T

    UMTS receiver

    Abstract: BGA622L7 BGA622 DCS1800 GSM900
    Text: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 8 9 T h e B G A 62 2 L 7 S i l i c o n - G er m an i u m U n i v e r s a l L o w Noise Amplifier MMIC in UMTS Receiver Application R F & P r o t e c ti o n D e v i c e s


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    PDF BGA622L7 UMTS receiver BGA622 DCS1800 GSM900

    BGA622L7

    Abstract: BGA622 DCS1800 GSM900 MMIC cross
    Text: A p p l i c a t i o n N o t e , R e v . 2 . 0 , F e b . 2 00 7 A p p li c a t i o n N o t e N o . 0 9 0 T h e B G A 62 2 L 7 S i l i c o n - G er m an i u m U n i v e r s a l L o w Noise Amplifier MMIC in GPS Receiver A p pl i c a t i o n s R F & P r o t e c ti o n D e v i c e s


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    PDF BGA622L7 BGA622 DCS1800 GSM900 MMIC cross

    CY62256

    Abstract: CY62256L CY62256LL
    Text: fax id: 1068 CY62256 32Kx8 Static RAM Features output enable OE and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected. The CY62256 is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, and


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    PDF CY62256 32Kx8 CY62256 450-mil-wide 300-mil 600-mil CY62256L CY62256LL

    Untitled

    Abstract: No abstract text available
    Text: Linear Power Amplifier 2.4 - 2.5 GHz, 802.11b/g Preliminary V2P *Lead Free* MAAPSS0075 Lead Free Features • · · · · · · · · Functional Schematic Ideal for 802.11b/g +26.5 dBm P1dB Typical at 3.3 V 32 dB Gain Typical 802.11b compliant to 23 dBm Pout


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    PDF 11b/g MAAPSS0075 12-lead MAAPSS0075 11b/g

    DCS-1800MHz

    Abstract: No abstract text available
    Text: RF3809 RF3809GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Features „ High Output Power of 2.0W P1dB „ High Linearity „ High Power-Added Efficiency „ Thermally-Enhanced Packaging „ VREF


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    PDF RF3809GaAs RF3809 450MHz 2500MHz RF3809 2002/95/EC DS080717 DCS-1800MHz

    2.45 Ghz power amplifier 45 dbm

    Abstract: PQFN footprint MAAPSS0075TR MAAPSS0075TR-3000 M513 MAAPSS0075 MAAPSS0075SMB 0402 footprint
    Text: RoHS Compliant Linear Power Amplifier 2.4 - 2.5 GHz, 802.11b/g MAAPSS0075 V1 Features • • • • • • • • • • • • • Functional Schematic Ideal for 802.11b/g +26 dBm P1dB Typical at 3.3 V 29.5 dB Gain Typical 802.11b compliant to 23 dBm POUT


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    PDF 11b/g MAAPSS0075 12-Lead MAAPSS0075 2.45 Ghz power amplifier 45 dbm PQFN footprint MAAPSS0075TR MAAPSS0075TR-3000 M513 MAAPSS0075SMB 0402 footprint

    2.45 Ghz power amplifier 45 dbm

    Abstract: No abstract text available
    Text: RoHS Compliant Linear Power Amplifier 2.4 - 2.5 GHz, 802.11b/g MAAPSS0075 V2 Features • • • • • • • • • • • • • Functional Schematic Ideal for 802.11b/g +26 dBm P1dB Typical at 3.3 V 29.5 dB Gain Typical 802.11b compliant to 23 dBm POUT


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    PDF 11b/g 12-Lead MAAPSS0075 12lead 2.45 Ghz power amplifier 45 dbm

    RF3809413

    Abstract: No abstract text available
    Text: RF3809 RF3809GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Features „ High Output Power of 2.0W P1dB „ High Linearity „ High Power-Added Efficiency „ Thermally-Enhanced Packaging „ VREF


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    PDF RF3809GaAs RF3809 450MHz 2500MHz RF3809 pre-driv60 DS080221 RF3809413

    equivalent ZO 607

    Abstract: j200 transistor 2SC5226 2SC5245 FH202 TS4162
    Text: Ordering number:ENN6220 NPN Epitaxial Planar Silicon Composite Transistor FH202 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6


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    PDF ENN6220 FH202 FH202] 2SC5226) TS4162) FH202 2SC5245 TS4162, equivalent ZO 607 j200 transistor 2SC5226 TS4162

    Untitled

    Abstract: No abstract text available
    Text: RF3807 RF3807GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Features „ Output Power>0.5W P1dB „ High Linearity „ High Power-Added Efficiency „ Thermally-Enhanced Packaging „ VREF 1 NC


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    PDF RF3807GaAs RF3807 450MHz 2700MHz RF3807 DS080220

    equivalent ZO 607

    Abstract: j200 transistor 2SC5226 2SC5245 FH202 TS4162
    Text: Ordering number:ENN6220 NPN Epitaxial Planar Silicon Composite Transistor FH202 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6


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    PDF ENN6220 FH202 FH202] 2SC5226) TS4162) FH202 2SC5245 TS4162, equivalent ZO 607 j200 transistor 2SC5226 TS4162

    CY62256L-70SNI

    Abstract: No abstract text available
    Text: gyp : CY62256 C'i- 32Kx8StaticRAM output enable UE and three-state drivers. This device has an automatic power-down feature, reducing the power consump­ tion by 99.9% when deselected. The CY62256 is in the stan­ dard 450-mil-wide (300-mil body width) SOIC, TSOP, and


    OCR Scan
    PDF CY62256 CY62256 450-mil-wide 300-mil 600-mil CY62256L-70SNI