29F080
Abstract: 29F080-90 S-12 AS29F080
Text: H igh p erform ance •■ A S29F080 IHI 1MX8 5V CMOS Flash EEPROM 1 Mcjjcihil x R C M O S F lash E P R O M Prelim inary inform ation Features • Organization: 1MX8 • Sector architecture • Low pow er consum ption - 30 mA m a x im u m rea d c u rre n t
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AS29F080
10x20
40-pin
AS29F080-
-55TC
AS29F080-AS29F080-
-90TC
-90TI
29F080
29F080-90
S-12
AS29F080
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29F080
Abstract: S29F080
Text: Preliminary information Features • O rg a n iz a tio n : 1M x 8 • S ecto r a rc h ite c tu re - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5 .0 ± 0 .5 V p o w e r s u p p ly f o r r e a d / w r ite o p e ra tio n s
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AS29F080-90TC
A529F080-90TI
AS29F080-90SC
A529F080-90SI
AS29F080-î
AS29F080-120TI
AS29F080-12OSC
AS29F080-120SI
AS29F080-IS0TC
AS29F080-I50TI
29F080
S29F080
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intel 29F
Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Text: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256
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628127H
T7164
712S6
DT71Q08
1S61C64AH
LS61C2S6AH
IS61LV3216
S61C512
IS61C64
S61LV256
intel 29F
T7164
28F Intel
LV6416
4c4007
5B810
32kxS
62832
dram cross reference
T5C2568
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Untitled
Abstract: No abstract text available
Text: Preliminary information •■ S29F080 A 5V 1Mx 8 CM O S Flash EEPROM Features • Organization: 1Mx 8 • Sector architecture - Sxteen 64Kbyte sectors - Equal sector architecture - Erase any combination o f sectors or full chip • Sngle 5.0±0.5V pow er supply for read/ write operations
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AS29F080
64Kbyte
10x20
40-pin
AS29K
80-55TC
80-70TC
80-70T[
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AS29F080
Abstract: AS29 29F080 29fu
Text: Preliminary information •■ S29F080 1 5V 1M x 8 C M O S Flash EEPROM Features • O rg an izatio n : 1M x 8 • Sector arch itectu re - Sixteen 64K b y te sectors - Equal secto r arc h ite ctu re - Erase an y c o m b in a tio n o f sectors o r full chip
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AS29F080
10x20
AS29F080-55TC
AS29F080-70TC
AS29F080-90TC
AS29F080-120TC
AS29F080-
150TC
40-pin
AS29F080-70TI
AS29F080
AS29
29F080
29fu
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29F080
Abstract: No abstract text available
Text: High p erform an ce lM x 8 5V CMOS Flash EEPROM •■ II II A S 29F080 I \ f c j j a h i i x 8 CMOS Flash E P R O M Preliminary information Features • Organization: 1MX8 • Sector architecture • Low power consumption - 3 0 mA m axim um read current - SO mA m axim um program current
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29F080
S29F080-55TC
AS29F080-70TC
S29F080-70TI
AS29F080-90TC
S29F080-90TI
29F080-120T
S29F080-120T
S29F080-150T
29F080-150T
29F080
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LTS 547 EH
Abstract: No abstract text available
Text: Preliminary inform ation S29F080 II 5V 1M x 8 CMOS Flash ÜPROM Features • O rganization: 1M x 8 • Sector architecture - Sixteen 64K byte sectors - Equalsectorarchitecture - Erase any com bination o f sectors o r fu ll chip • Single 5 D± 0 5 V pow e r supply ib rread /w rite opeiations
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AS29F080
080-150S
080-90T
29F080-90S
080-55S
S29F080
LTS 547 EH
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Untitled
Abstract: No abstract text available
Text: Preliminary information •■ S29F080 II 5V 1Mx 8 CMOS Flash EEPROM Features • O rganization: 1M x 8 • Sector architecture - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5.0± 0.5V po w er supply for re a d /w rite operations
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AS29F080
80-90T
080-120T
080-150T
080-55S
AS29F
080-70S
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