S29F080 Search Results

S29F080 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
29F080 Abstract: 29F080-90 S-12 AS29F080 Text: H igh p erform ance •■ A S29F080 IHI 1MX8 5V CMOS Flash EEPROM 1 Mcjjcihil x R C M O S F lash E P R O M Prelim inary inform ation Features • Organization: 1MX8 • Sector architecture • Low pow er consum ption - 30 mA m a x im u m rea d c u rre n t	OCR Scan	PDF	AS29F080 10x20 40-pin AS29F080- -55TC AS29F080-AS29F080- -90TC -90TI 29F080 29F080-90 S-12 AS29F080
29F080 Abstract: S29F080 Text: Preliminary information Features • O rg a n iz a tio n : 1M x 8 • S ecto r a rc h ite c tu re - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5 .0 ± 0 .5 V p o w e r s u p p ly f o r r e a d / w r ite o p e ra tio n s	OCR Scan	PDF	AS29F080-90TC A529F080-90TI AS29F080-90SC A529F080-90SI AS29F080-î AS29F080-120TI AS29F080-12OSC AS29F080-120SI AS29F080-IS0TC AS29F080-I50TI 29F080 S29F080
intel 29F Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568 Text: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256	OCR Scan	PDF	628127H T7164 712S6 DT71Q08 1S61C64AH LS61C2S6AH IS61LV3216 S61C512 IS61C64 S61LV256 intel 29F T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Untitled Abstract: No abstract text available Text: Preliminary information •■ S29F080 A 5V 1Mx 8 CM O S Flash EEPROM Features • Organization: 1Mx 8 • Sector architecture - Sxteen 64Kbyte sectors - Equal sector architecture - Erase any combination o f sectors or full chip • Sngle 5.0±0.5V pow er supply for read/ write operations	OCR Scan	PDF	AS29F080 64Kbyte 10x20 40-pin AS29K 80-55TC 80-70TC 80-70T[
AS29F080 Abstract: AS29 29F080 29fu Text: Preliminary information •■ S29F080 1 5V 1M x 8 C M O S Flash EEPROM Features • O rg an izatio n : 1M x 8 • Sector arch itectu re - Sixteen 64K b y te sectors - Equal secto r arc h ite ctu re - Erase an y c o m b in a tio n o f sectors o r full chip	OCR Scan	PDF	AS29F080 10x20 AS29F080-55TC AS29F080-70TC AS29F080-90TC AS29F080-120TC AS29F080- 150TC 40-pin AS29F080-70TI AS29F080 AS29 29F080 29fu
29F080 Abstract: No abstract text available Text: High p erform an ce lM x 8 5V CMOS Flash EEPROM •■ II II A S 29F080 I \ f c j j a h i i x 8 CMOS Flash E P R O M Preliminary information Features • Organization: 1MX8 • Sector architecture • Low power consumption - 3 0 mA m axim um read current - SO mA m axim um program current	OCR Scan	PDF	29F080 S29F080-55TC AS29F080-70TC S29F080-70TI AS29F080-90TC S29F080-90TI 29F080-120T S29F080-120T S29F080-150T 29F080-150T 29F080
LTS 547 EH Abstract: No abstract text available Text: Preliminary inform ation S29F080 II 5V 1M x 8 CMOS Flash ÜPROM Features • O rganization: 1M x 8 • Sector architecture - Sixteen 64K byte sectors - Equalsectorarchitecture - Erase any com bination o f sectors o r fu ll chip • Single 5 D± 0 5 V pow e r supply ib rread /w rite opeiations	OCR Scan	PDF	AS29F080 080-150S 080-90T 29F080-90S 080-55S S29F080 LTS 547 EH
Untitled Abstract: No abstract text available Text: Preliminary information •■ S29F080 II 5V 1Mx 8 CMOS Flash EEPROM Features • O rganization: 1M x 8 • Sector architecture - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5.0± 0.5V po w er supply for re a d /w rite operations	OCR Scan	PDF	AS29F080 80-90T 080-120T 080-150T 080-55S AS29F 080-70S