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    S4 1C Search Results

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    S4 1C Price and Stock

    Bumper Specialties Inc BS41CL02X02RP

    BUMPER CYLI .78" DIA X .2" CLR
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    DigiKey BS41CL02X02RP Box 1,940 4
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    CTS Corporation S41C083110GP

    RES ARRAY, CONCAVE, 4 RES 0402,
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    CTS Corporation S41C083273GP

    RES ARRAY, CONCAVE, 4 RES 0402,
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    CTS Corporation S41C083333JP

    RES ARRAY, CONCAVE, 4 RES 0402,
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    DigiKey S41C083333JP Reel 10,000
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    CTS Corporation S41C083561GP

    RES ARRAY, CONCAVE, 4 RES 0402,
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    DigiKey S41C083561GP Reel 10,000
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    S4 1C Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S41/C NKK Switches Switches - Toggle Switches - SWITCH TOGGLE 4PST 25A 125V Original PDF
    S41/CUL NKK Switches Switches - Toggle Switches - SWITCH TOGGLE 4PST 25A 125V Original PDF

    S4 1C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    dataman s4

    Abstract: DATAMAN S3 POWER SUPPLY DATAMAN S3 Programmer HM66205L 00000-1FFFF AMD 2716 2716 eprom manual programming by switch 2716 prom Dataman S3 AMD PROM burning
    Text: DATAMAN S4 MANUAL Introduction to S4 DATAMAN S4 is a battery-powered PROM programmer for Microsystem Designers. It can readily be used for production programming too.S4 contains 128k, 256k or 512k of RAM which retains data and configuration even when switched off. The


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    RS232 dataman s4 DATAMAN S3 POWER SUPPLY DATAMAN S3 Programmer HM66205L 00000-1FFFF AMD 2716 2716 eprom manual programming by switch 2716 prom Dataman S3 AMD PROM burning PDF

    T-78

    Abstract: quanta PC97551 PHKD13N03LT C305 RN138 usb QUANTA GFX AR208 C5343 lm3931
    Text: 1 2 3 4 5 6 7 8 Voltage Rails PWR_SRC Primary DC system power supply 3VSUS 3.3V switched power rail off in S4-S5 +3V 3.3V switched power rail ( off in S3-S5 ) 3VPCU 3V always on power rail 5VSUS 5V switched power rail ( off in S4-S5 ) +5V 5V switched power rail ( off in S3-S5 )


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    150U/4V-3528 PR161 150U/4V-3528 100K/F 1U/10V PR162 PR159 10K/F PC123 25VREF T-78 quanta PC97551 PHKD13N03LT C305 RN138 usb QUANTA GFX AR208 C5343 lm3931 PDF

    ABB flow sensor SE41F

    Abstract: 10DS3111 D674A FSM4000-SE41F FSM4000-SE21F FSM4000 FSM4000-SE21 D174D 10D14 D184B140U02
    Text: Operating Instruction D184B140U02 Valid for software versions C.10 and higher Model FSM4000-SE41F FSM4000-SE21 FSM4000-SE21F FSM4000-S4 Electromagnetic Flowmeter FSM4000 Blinder Text Electromagnetic Flowmeter FSM4000 Operating Instruction D184B140U02 08.2010


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    D184B140U02 FSM4000-SE41F FSM4000-SE21 FSM4000-SE21F FSM4000-S4 FSM4000 D-37079 ABB flow sensor SE41F 10DS3111 D674A FSM4000-SE41F FSM4000-SE21F FSM4000 FSM4000-SE21 D174D 10D14 D184B140U02 PDF

    LPDDR2 SDRAM micron

    Abstract: lpddr2 MT42L256M32D2 LPDDR2 SDRAM micron lpddr2 MT42L128M32D1 micron LPDDR2 X32 35MR11 lpddr2 DQ calibration 216-ball LPDDR
    Text: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V


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    MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 09005aef84427aab LPDDR2 SDRAM micron lpddr2 MT42L256M32D2 LPDDR2 SDRAM micron lpddr2 MT42L128M32D1 micron LPDDR2 X32 35MR11 lpddr2 DQ calibration 216-ball LPDDR PDF

    MT42L256M32D2

    Abstract: LPDDR2 SDRAM micron MT42L128M32D1 PS 229 ADQ-22 micron lpddr2 MT42L256M32D marking wl4 SMD MARKING code 4N Dual LPDDR2
    Text: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V


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    MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 09005aef84427aab MT42L256M32D2 LPDDR2 SDRAM micron MT42L128M32D1 PS 229 ADQ-22 micron lpddr2 MT42L256M32D marking wl4 SMD MARKING code 4N Dual LPDDR2 PDF

    SMD MARKING CODE sdp

    Abstract: No abstract text available
    Text: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4, MT42L384M32D3 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V


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    MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4, MT42L384M32D3 09005aef84427aab SMD MARKING CODE sdp PDF

    mt42l128M32

    Abstract: mt42l256m32 MT42L64M32D1 LPDDR2-1066 MT42L256M32D4 MT42L128M32D MT42L128M16D1 MT42L128M64D4 MT42L256M32D MT42L128M32D2
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


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    MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb mt42l128M32 mt42l256m32 MT42L64M32D1 LPDDR2-1066 MT42L256M32D4 MT42L128M32D MT42L128M16D1 MT42L256M32D MT42L128M32D2 PDF

    MT42L64M64D2

    Abstract: mt42l128M32 LPDDR2-1066 64M32 MT42L128M64D4 MT42L MT42L256M32D4 MT42L64M32D1 LPDDR2 SDRAM micron micron lpddr2
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


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    MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb MT42L64M64D2 mt42l128M32 LPDDR2-1066 64M32 MT42L MT42L256M32D4 MT42L64M32D1 LPDDR2 SDRAM micron micron lpddr2 PDF

    lpddr2 DQ calibration

    Abstract: micron lpddr2 lpddr2-s4 ADQ28 MT42L128M16D1 LPDDR2 SDRAM micron MT42L64M32D1 MT42L128M32D2 mt42l256m32 LPDDR2 1Gb Memory
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


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    MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb lpddr2 DQ calibration micron lpddr2 lpddr2-s4 ADQ28 MT42L128M16D1 LPDDR2 SDRAM micron MT42L64M32D1 MT42L128M32D2 mt42l256m32 LPDDR2 1Gb Memory PDF

    216-ball

    Abstract: Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MT42L128M64D4 MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


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    MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb 216-ball Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32 PDF

    "Angle Sensor"

    Abstract: angle position sensors Q62705-K5002
    Text: Giant Magneto Resistive Position Sensor S4 Preliminary Data This angle sensor is based on the brand new Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Injection flash 0.1 max Features


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    gmr sensor

    Abstract: Q62705-K5002
    Text: Giant Magneto Resistive Position Sensor S4 Preliminary Data This angle sensor is based on the brand new Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. 12.3 2.3 11.7 2.1 Chip center 0.55 ±0.15


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    hynix lpddr2

    Abstract: ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory
    Text: 2Gb LPDDR2-S4 SDRAM NT6TL64M32AQ Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS, /DQS is transmitted/received with data, to be used in capturing data at the receiver  Differential clock inputs (CK and /CK)


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    NT6TL64M32AQ -64Meg 64M32 -168-ball hynix lpddr2 ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory PDF

    TIC-L004-11

    Abstract: TIC-L006-11 TIC-L002-11 TIC-L009-11
    Text: Features: 1. Meets IEEE 802.3 and ANSI X3.263 2. Operating Temperature: 0 C ° to +85 C ° 3. 1500Vrms Isolation 4. Enhanced Common Mode Attenuation for maximum EMI Suppression 5. Full Product Qualification Tests 3D Package View S1 S2 S3 S4 Product Selection


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    1500Vrms TIC-L003-11 TIC-L006-11 TIC-L007-11 TIC-L008-11 TIC-L002-11 TIC-L004-11 TIC-L009-11 TIC-L010-11 TIC-L011-11 TIC-L004-11 TIC-L006-11 TIC-L002-11 TIC-L009-11 PDF

    MT42L256M32D2

    Abstract: MT42L128M32D1 lpddr2 DQ calibration MT42L256M16D1 LPDDR2 SDRAM MT42L128M64D2 MT42L256M64D4 mt42L256m16 LPDDR2 SDRAM micron LPDDR2
    Text: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • VDD2: 1.2V • Configuration – 32 Meg x 16 x 8 banks x 1 die – 16 Meg x 32 x 8 banks x 1 die


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    MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 09005aef84427aab MT42L256M32D2 MT42L128M32D1 lpddr2 DQ calibration MT42L256M16D1 LPDDR2 SDRAM MT42L128M64D2 mt42L256m16 LPDDR2 SDRAM micron LPDDR2 PDF

    M1012

    Abstract: No abstract text available
    Text: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • VDD2: 1.2V • Configuration – 32 Meg x 16 x 8 banks x 1 die – 16 Meg x 32 x 8 banks x 1 die


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    MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 134-ball 168-ball 216-ball M1012 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYMD212G726D P S4-K/H/L SERIAL PRESENCE DETECT Rev. 0.0 -K Byte Function described Number of Bytes written into serial memory at module manufacturer 1 Total Number of Bytes in SPD device 2 Fundmetal Memory Type 3 Number of Row addresses on this assembly 4


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    HYMD212G726D B27592 PDF

    siemens gmr

    Abstract: magnetic field sensor siemens siemens gmr s4 GMR sensor thermal conductivity sensor siemens GMR sensor magnetic
    Text: SIEMENS Giant Magneto Resistive Position Sensor S4 Preliminary Data This angle sensor is based on the brand new Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features • GMR sensor on copper


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    Q62705-K5002 siemens gmr magnetic field sensor siemens siemens gmr s4 GMR sensor thermal conductivity sensor siemens GMR sensor magnetic PDF

    KS74AHCT74

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC OS *7A 1* KS54AHCT KS74AHCT Dual D-Type Positive-Edge-Triggered Flip-Flops with Preset and Clear DESCRIPTION FEATURES ' • Function, pin-out, speed and drive compatibility with S4/74ALS logic family • Low power consumption characteristic of CMOS


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    H-l-42 KS54AHCT KS74AHCT 7Tb414S 90-XO 14-Pin KS74AHCT74 PDF

    Untitled

    Abstract: No abstract text available
    Text: SN54LS15, SN54S15, SN74LS15, SN74S15 TRIPLE 3-INPUT POSITIVE AND GATES WITH OPEN-COLLECTOR OUTPUTS APRIL 1985 — REVISED MARCH 1988 SN 54LS15, SN S4 S15 J OR W PACKAG E SN 74LS1S. SN 7 4S1 5 . . . D OR N PACKAGE ITO P V IE W 1AC r c n 4pVcc 2AC 1C 31Y 2BC


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    SN54LS15, SN54S15, SN74LS15, SN74S15 54LS15, 74LS1S. PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Giant Magneto Resistive Position Sensor S4 Preliminary Data Version 1.0 This angle sensor is based on the brand new Giant Magneto Resistive GMR technology. It is outstanding for the huge tolerances it offers to the user in assembly. Features • GMR sensor on copper


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    PDF

    XF0013QS4

    Abstract: 208H
    Text: 1. M echanical D im ensions: 3. E lectrical Specification s: 25°C 0.730 Max Isolation: 1500 Vrms PRI to SEC c 3.240 TX Turns Ratio: 1CT:2CT (PRI:SEC) RCV Turns Ratio: 1CT:2CT (PRI:SEC) 0.045 0.025 -it 0 .0 0 4 J Min E 0.050 XF MRS WWW X o 2 m Qo XF0013Q S4


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    XF0013QS4 100KHz MIL-STD-202G, UL94V-0 E151556 102mm) XF0013QS4 Aug-19-09 208H PDF

    S4 DIODE

    Abstract: No abstract text available
    Text: 0 G lû 3 b 2 L IO • MITSUBISHI OPTICAL DEVICES FU-52SDU-F2/S2/F4/S4 DUPLEXER MODULE WITH SINGLEMODE FIBER PIGTAIL (1.3 um LD AND 1.3 miti PD) DESCRIPTION FEATU RES Duplexer module FU-52SDU series incorporate a 1.3um laser diode, an InGaAs photodiode and


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    FU-52SDU-F2/S2/F4/S4 FU-52SDU S4 DIODE PDF

    ICM4712701

    Abstract: application of RF robot SFG455A3 rmc npo capacitor ne616 SCB-1320Z TOKO 455KHz ceramic filter 5.5MHz ceramic Filter SA616 NE615
    Text: PHILIPS INTERNATIONAL 71iafl2b GD53b7M S4? « P H I N bOE » Product spaclflcatlon Philips Semiconductors RF Communications Products NE/SA616 Low-voltage high performance mixer FM IF system " P -7 4 - U - o DESCRIPTION The NE/SA616 is a low-voltage high performance monolithic FM IF system


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    QQ53b7M NE/SA616 NE/SA616 20-lead NE616 NE616D KTDN9/91 ICM4712701 application of RF robot SFG455A3 rmc npo capacitor SCB-1320Z TOKO 455KHz ceramic filter 5.5MHz ceramic Filter SA616 NE615 PDF