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    S541A HALL EFFECT Search Results

    S541A HALL EFFECT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    S541A HALL EFFECT Datasheets Context Search

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    s543a hall effect

    Abstract: S541A S543A s541a hall effect S-541A s566a SS511AT S-511-A S549A SS541A
    Text: CATALOG ;d lid a H o n e yw e ll D ivision state LISTING SS5 S E R I E S sensef SHART CJ <E LO LJ LJ LO LO LO LO ,380 NEMINAL TE HALL EFFECT SENSING SURFACE 'IDMINAL PACKAGE H ALL ELEMENT ,006 010 MAX TYP ,005 MAX FLASH ,098+, 004 "t p t n n RR CD002 W ,164 + ,003


    OCR Scan     		07SEP06 5M-1982 SS543AT SS566AT SS549A~ s543a hall effect S541A S543A s541a hall effect S-541A s566a SS511AT S-511-A S549A SS541A PDF