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    WSI eprom Programming algorithm

    Abstract: No abstract text available
    Text: S57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2 K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Available in 300 Mil "Skinny" DIP • Fast Access Time * Immune to Latch-up — tA c c = 70 ns — Up to 200 mA ~ lcs = 20 ns • Low Power Consumption


    OCR Scan     		PDF WS57LV291C WS57LV291C WS57C291C S57LV291C WS57LV291C-70T WS57LV291C-90T WSI eprom Programming algorithm

    WSI Programming algorithm

    Abstract: No abstract text available
    Text: S57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Available In 300 Mil "Skinny" DIP • Fast Access Time * Immune to Latch-up — t Ac c = 70 ns — Up to 200 mA — t c s = 20 ns • ESD Protection Exceeds 2000V


    OCR Scan     		PDF WS57LV291C WS57LV291C WS57C291C WS57LV291C-70T WS57LV291C-90T WSI Programming algorithm

    22A53

    Abstract: No abstract text available
    Text: S57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Available in 300 Mil "Skinny" DIP • Fast Access Time • Immune to Latch-up — tACC = 70 ns — Up to 200 mA — t Cs = 20 ns • Low Power Consumption


    OCR Scan     		PDF WS57LV291C WS57LV291C WS57LV291C-70T WS57LV291C-90T S57LV291C 22A53

    WS57C291C

    Abstract: WS57LV291C WS57LV291C-70 WS57LV291C-70T WS57LV291C-90 WS57LV291C-90T WSI Programming algorithm
    Text: S57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2 K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Fast Access Time — • Available in 300 Mil "Skinny" DIP • Immune to Latch-up t ACC = 70 ns — lcs = 20 ns • Low Power Consumption — —


    OCR Scan     		PDF WS57LV291C WS57LV291C WS57C291C WS57LV291C-70T WS57LV291C-90T WS57LV291C-70 WS57LV291C-90 WSI Programming algorithm

    Untitled

    Abstract: No abstract text available
    Text: S57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2 K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Available in 300 Mil "Skinny" DIP • Fast Access Time • Immune to Latch-up — t Ac c = 70 ns — Up to 200 mA — t c s = 20 ns . EgD Protection Exceeds 2000V


    OCR Scan     		PDF WS57LV291C WS57LV291C S57LV291C WS57LV291C-70T WS57LV291C-90T

    Untitled

    Abstract: No abstract text available
    Text: S57LV291C PRELIMINARY HIGH SPEED 3.3 VOLT 2 K x 8 CMOS PROM/RPROM KEY FEATURES • 3.3 Volt ± 0.3 Volt Vcc • Available in 300 Mil "Skinny" DIP • Fast Access Time • Immune to Latch-up — I a c c = 70 ns — Up to 200 mA — 'cs = 20 ns • Low Power Consumption


    OCR Scan     		PDF WS57LV291C WS57LV291C WS57LV291C-70T WS57LV291C-90T