TSP50C04
Abstract: BD 4914 MX 0541 TSP5220 TSP50C12 BA 59 04AF P DAC 0804 interfacing DAC with 0830 microprocessor LCD 16PIN mozart
Text: TSP50C0x/1x Family Speech Synthesizer Design Manual 2000 Linear Products SPSS011D IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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TSP50C0x/1x
SPSS011D
TSP50C04
BD 4914
MX 0541
TSP5220
TSP50C12
BA 59 04AF P
DAC 0804
interfacing DAC with 0830 microprocessor
LCD 16PIN
mozart
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Untitled
Abstract: No abstract text available
Text: $SULO##5333 $6:&4357 $6:&64357 8926169#45;.ð;#&026#65$0#+ YROXWLRQDU\#3LQRXW, HDWXUHV • S7C1024 (5V version) • AS7C31024 (3.3V version) • Industrial and commercial temperatures • Organization: 131,072 words x 8 bits • High speed - 10/12/15/20 ns address access time
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AS7C1024
AS7C31024
AS7C1024)
AS7C31024)
32-pin
20007C31024-15JI
AS7C1024-15TC
AS7C1024-15TI
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4cx 250 BC
Abstract: om02 MSP430Pxxx S7C0 ADC12 B-26 MSP430 tpx4 lcd pinout PMS430E325
Text: MSP430x3xx Family User’s Guide July 2000 Mixed Signal Products SLAU012 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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MSP430x3xx
SLAU012
100us
4cx 250 BC
om02
MSP430Pxxx
S7C0
ADC12
B-26
MSP430
tpx4
lcd pinout
PMS430E325
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VLN 2003
Abstract: AS7C1025 AS7C31025 20013A ldh 0470
Text: A S7C1025 AS7C31025 5V/3.3V 128K •8 C M O S SRAM iCom nion I/O Features • Organization: 131,072 w ords X 8 bits • High speed - 1 0 / 1 2 /1 5 / 2 0 ns address access time - 3 / 3 / 4 / 5 ns output enable access time • Low pow er consum ption - Active:
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AS7C1025
AS7C31025
128KX8
AS7C31025)
TQ0344R
VLN 2003
20013A
ldh 0470
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Untitled
Abstract: No abstract text available
Text: H ig li P e rfo rm a n ce S7C1028 A S7C1028L 256KX4 CMOS SRAM A 2 5 6 K X 4 CMOS SRAM Features • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o rd s x 4 b its • Easy m e m o r y e x p a n sio n w ith CE a n d OE in p u ts • H ig h sp e e d • T T L -c o m p atib le, th re e -s ta te I / O
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AS7C1028
S7C1028L
256KX4
1DD344
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7C164-15
Abstract: No abstract text available
Text: 8K x8 Fast SRAM A S7C164 Logic B lock D iagram F eatures ♦ High Performance CMOS: tAA=10-25 ns ♦ Fast OE access: tQK=3-6 ns ♦ Low power - 633 mW @ 100 MHz - 125 mW @ 10 MHz standby - 1.1 mW @ 10 MHz standby: L version ♦ Automatic CE1/CE2 power down
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S7C164
AS7C164
7C164-15
7C164-20
7C164-25
7C164-15
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Untitled
Abstract: No abstract text available
Text: H ig h P e r f o r m a n c e 128K X 8 C M O S SRAM _ II A S7C181024LL . A 1 28 K X 8 J n te lliw a tt low pow er CMOS SRAM Advance information Intelliw att active p o w er reduction circuitry 1.6SV to 1.95V operating range JESD 8-7 O rganization: 131,072 w ords x 8 bits
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28KX8
AS7C181024LL
I28KX8
32-pin
48-ball
AS7C181024LL-70TC
AS7C181024LL-70TI
AS7C18
1024LL-AS7C181024IX-
100TC
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intel 29F
Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Text: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C S7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256
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628127H
T7164
712S6
DT71Q08
1S61C64AH
LS61C2S6AH
IS61LV3216
S61C512
IS61C64
S61LV256
intel 29F
T7164
28F Intel
LV6416
4c4007
5B810
32kxS
62832
dram cross reference
T5C2568
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Untitled
Abstract: No abstract text available
Text: Hij>h P e r f o r m, u h r AS7CI026 A » 64Kxl ' H C M O S SR AM AS7CÎI026 6 I k x If, CMOS NK'UI Preliminary information • O rg a n iz a tio n : 6 5 ,5 3 6 w o rd s x 16 bits • T T L - c o m p a tib le , three-state I / O • H ig h speed • 4 4 - p in JE D E C standard p ackage
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64Kxl(
AS7CI026
026-25TC
AS7C1026-20TC
\S7C1026
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Untitled
Abstract: No abstract text available
Text: High Performance 128Kx8 C M O S SRAM p i S7C1024 S7C1024L 128Kx8 CM O S S RAM Common I/O FEATURES • Organization: 131,072 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE1, CE2, OE inputs - 10/12/15/20/25/35 ns address access time
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128Kx8
AS7C1024
AS7C1024L
128Kx8
32-pin
7C256
7C512
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Untitled
Abstract: No abstract text available
Text: KM416V1000BJ CMOS D RA M ELECTRONICS 1 Mx 1 6 B i t CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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KM416V1000BJ
1Mx16
40SOJ
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Untitled
Abstract: No abstract text available
Text: Advance information •■ S7C181026LL II 1.8V 64Kx 16 Intelliwatt'-' low power C M O S SRAM Features • • • • • O ptim ized design for battery operated portable systems Intelliw att active pow er reduction circuitry O rganization: 6 5 ,5 3 6 w ords X 16 bits
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AS7C181026LL
S7C181026LL-35TI
181026LL-55TI
S7C181026LL-70TI
S7C181026LL-100TI
S7C181026LL-35BC
S7C181026LL-55BC
AS7C181026LL-70BC
AS7C181026LL-100BC
S7C181026LL-35BI
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Untitled
Abstract: No abstract text available
Text: H igh P erform ance S7C10 2 4 S7C1024L 128KX8 CMOS SRAM A 128KX8 CMOS SRAM Features • O r g a n iz a tio n : 1 3 1 ,0 7 2 w o r d s x 8 b its • E asy m e m o r y e x p a n s i o n w i t h C E 1 , C E 2, O E in p u t s • H ig h s p e e d • T T L -c o m p a tib le , th r e e - s t a te I / O
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AS7C10
AS7C1024L
128KX8
128KX8
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Untitled
Abstract: No abstract text available
Text: H ig h P e r fo r m a n c e 128K x8 C M O S SR A M •■ A S7C 1025 A S7C 31025 H ^ lL A 1 2 8 K X 8 C M O S SR A M C o m m o n I / O • Organization: 131,072 w ords x 8 bits • High speed - 1 0 /1 2 /1 5 /2 0 ns address access time - 3 /3 / 4 /S ns output enable access time
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AS7C31025)
mAS7C31025-15JC
AS7C31025-20JC
AS7C31025-12JI
AS7C31025-15J1
AS7C31025-20JI
AS7C1025-12TJC
AS7C1025-15TJC
AS7C31025-12T7C
AS7C31025-15TJC
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Untitled
Abstract: No abstract text available
Text: Preliminary information •■ S7C181024LL A 1,8V 128K x8 Intelliwatt,v low power CMOS SRAM Features • • • • Intelliwatt active power reduction circuitry 1.65V to 1.95V operating range JESD 8-7 Organization: 131,072 w ords x 8 bits High speed
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AS7C181024LL
32-pin
48-ball
AS7C181024LL-100TC
AS7C181024LL-55TI
AS7C181024LL-7
AS7C181024LL-100TI
AS7C181024LL-55BC
AS7C181024LL-70BC
AS7C181024LL-100BC
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Untitled
Abstract: No abstract text available
Text: H i gh p e r f o r m a n c e » 6 4 K x 16 II AS 7 C18 10 26 LL CMOS SRAM A 6 4 K x l 6 In telliw att1'• low power CMOS SRAM Advance information • O p tim iz e d d e s ig n fo r b a tte r y o p e r a te d p o r ta b le s y ste m s • E a sy m e m o r y e x p a n s i o n w i t h CE, O E in p u t s
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t26LL-70BC
S7C181026LL-100BC
181026IX
-35TI
AS7C181026LL-35BI
AS7C181026LL-55BI
AS7C18
1026LL-100BI
1026LL
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AS7C
Abstract: No abstract text available
Text: H igh Perform ance 256K X 4 CMOS SRAM AS7C.1028 I 2 S 6 K X 4 C M O S SR A M Features • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s x 4 b its 1 T T L - c o m p a tib le , th r e e - s ta te 1 / O • H ig h s p e e d • 2 8 - p i n JEDEC s ta n d a r d p a c k a g e s
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AS7C1028
AS7C1028-15JC
AS7C1028-20JC
AS7C1028-25JC
AS7C1028-35JC
AS7C
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Untitled
Abstract: No abstract text available
Text: irrL J p raiyiM i 87C196CA/87C196CB 20 MHz ADVANCED 16-BIT CHMOS MICROCONTROLLER WITH INTEGRATED CAN 2.0 Automotive m High Performance CHMOS 16-Bit CPU up to 20 Mhz Operation • Full Duplex Synchronous Serial I/O Port (SSIO) ■ Up to 56 Kbytes of On-Chip EPROM
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87C196CA/87C196CB
16-BIT
87C196CB.
87C196CA,
87C196CB,
Tose87C196CA,
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WZ-250
Abstract: TL2002
Text: F ra n ce information Features • • • • • O ptim ized design for battery o perated portable systems Intelliw att active p o w er red u ctio n circuitry O rganization: 6 5 ,5 3 6 w o rd s x ] 6 bits 1.65V to 1.95V operating range JESD 8 -7 H igh speed
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48-ball
AS7C181026LL-55T1
181026IX-55BC
181026IX-55BI
AS7C181026LL-70TC
AS7C1810261L-70T[
181026IL-70BC
181026IL-70BI
AS7C18
026LL-1OOTC
WZ-250
TL2002
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Untitled
Abstract: No abstract text available
Text: High Perform.iiK r » AS7CI0ZS A l28Kx8 H C M O S SRAM \S 7C î I 0 Z S I 2 K K * 8 C M O S S R A M Co mmo n i / 0 Prelim inary inform ation Features • O rganization: 131,072 w ords x 8 bits • H igh speed - 10/1 2 /1 5 /2 0 ns address access tim e
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AS7C1025-1
S7C31
S7C1025-20JC
1025-20JC
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Untitled
Abstract: No abstract text available
Text: AS7C 1026 AS 7C 31026 5 V /3 .3V 6 4 K x 16 CMOS SRAM Features •O igan izatbn : 65,5 3 6 w o id sx 16 bits •High gpeed - 1 0 / 1 2 / 1 5 / 2 0 nsadchess access tim e - 5 / 6 / 8 / 1 0 n s output enable access tim e •low pow e r consum p tb n -A ctiv e: 770 mW m ax 20 n s cycle, 5V
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AS7C513)
128KX
AS7C3128K16)
256KX
7C4098)
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AS7C1025
Abstract: AS7C31025 102S-20
Text: H ig h P erfo rm a n ce 128K.X8 . \ ai I I . . A S 7C 1025 ' ' " ' • 7-, C M O S SRA M A S7C 31025 1 2 8 K x 8 C M O S SR A M C o m m o n I / O P relim inary inform ation Features • O r g a n iz a tio n : 1 3 1 ,0 7 2 w o r d s x 8 b its • H ig h sp ee d
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128KX8
AS7C1025
S7C31025
AS7C31025)
00344R
AS7C31025
AS7C1025
i02S-12JC
AS7C31025
102S-20
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intel 87C196
Abstract: 87C196KB16 S8XC196KB wp1n 87C196KB 8096BH 270909 87C196 87c196kb12
Text: m y M O K y p ? 87C196KB/87C196KB16 ,4 HIGH PERFORMANCE CHMOS MICROCONTROLLER • 8 Kbytes of On-Chip EPROM ■ 232 Byte Register File ■ Reglster-to-Register Architecture ■ 28 Interrupt Sources/16 Vectors ■ 1.75 jas 16 x 16 Multiply 16 MHz ■ 3.0
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87C196KB/87C196KB16
Sources/16
16-Bit
16-Bit
10-Bit
87C196KB
intel 87C196
87C196KB16
S8XC196KB
wp1n
8096BH
270909
87C196
87c196kb12
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Untitled
Abstract: No abstract text available
Text: IWIXIC MX27C1 n 0 0 /2 7 C 1 0 2 4 1 M-Brrn S8K x 8 /6 4 K x IS CMOS EPROM FEATURES 64K x 16 organization MX27C1024, JEDEC pin out) 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible) +12.5V programming voltage Fast access time: 55/70/85/100/120/150 ns
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MX27C1
00/27C
8/64K
MX27C1024,
MX27C1100,
40pin
MX27C1100/1024
MX27C1024DC-55
MXP7C10P4DC-70---------
40-Pin
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