AS19F
Abstract: 29F2C F002T
Text: O rd e rin g in fo rm a tio n X Ordering inliirmiii um Asynchronous SRAM port numbering system Package type- P= P D IP I - SO I Voltage: SRAM Blank 5 = 5 V 'C M O S D ensity an d —3 ï V C M O S org an ization Po w e r L LL — L o w pow er Acct ss = V e ry lo w p o w e r
|
OCR Scan
|
150TC
150T1
-150SI
32-bit
64-bit
128-bit
128-bit
AS19F
29F2C
F002T
|
PDF
|
ci 3860, 8 pin
Abstract: 22Z3
Text: High Performance 32Kx9 CMOS SRAM 11 W ESW . S7C259 S7C259L 32K x 9 C M O S S R A M C o m m o n I/O IF E A T U R E S • O rganization: 32,768 w ords x 9 bits • 2.0V data retention (L version) • H igh S peed - Industry's fastest O E A ccess Tim e 12/15/20/25/35 ns A ddress access tim e
|
OCR Scan
|
AS7C259
32Kx9
AS7C259L
605mW
55mWTTLI/0
125mW
10MHz
32-pin
ci 3860, 8 pin
22Z3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Performance 32Kx9 CMOS SRAM 11 S7C259 S7C259L 32Kx9 CMOS SRAM Common I/O IF E A T U R E S • O rganization: 32,768 w ords x 9 bits • 2.0V data retention (L version) • H igh S peed - Industry's fastest O E A ccess Tim e 12/15/20/25/35 ns A ddress access tim e
|
OCR Scan
|
32Kx9
AS7C259
AS7C259L
32Kx9
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Performance 32KX9 A S7C 259 A S7C 259L C M O S SRA M 3 2 K x 9 CMOS SRAM • Easy memory expansion with CEI, CE2, and OE inputs • TTL-compatible, three-state 1/O • 32-pin JEDEC standard packages - 300 mil PDIP and SOJ • ESD protection > 2 0 0 0 volts
|
OCR Scan
|
32KX9
32-pin
AS7C259
OQ344c
|
PDF
|