Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    S9012 TO 92 Search Results

    S9012 TO 92 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADC1038CIWM Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20, SOP-20 Visit Rochester Electronics LLC Buy
    TL505CN Rochester Electronics LLC ADC, Dual-Slope, 10-Bit, 1 Func, 1 Channel, Serial Access, BIMOS, PDIP14, PACKAGE-14 Visit Rochester Electronics LLC Buy
    ML2258CIQ Rochester Electronics LLC ADC, Successive Approximation, 8-Bit, 1 Func, 8 Channel, Parallel, 8 Bits Access, PQCC28, PLASTIC, LCC-28 Visit Rochester Electronics LLC Buy
    CA3310AM Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, PDSO24, PLASTIC, MS-013AD, SOIC-24 Visit Rochester Electronics LLC Buy
    CA3310M Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, PDSO24, PLASTIC, MS-013AD, SOIC-24 Visit Rochester Electronics LLC Buy

    S9012 TO 92 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    S9012H

    Abstract: transistor s9012h S9012G S9012H TO-92 transistor s9012 S9012-G gunze touch 8 wire Collector-current 0.5a To-92
    Text: MCC S9012 S9012-G S9012-H S9012-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		S9012 S9012-G S9012-H S9012-I 625Watts -55OC S9012H transistor s9012h S9012G S9012H TO-92 transistor s9012 S9012-G gunze touch 8 wire Collector-current 0.5a To-92 PDF

    S9012H

    Abstract: transistor s9012 transistor s9012h S9012 data sheet S9012 equivalent S9012 DATASHEET S9012 To92 transistor S9012H TO-92
    Text: MCC S9012 S9012-G S9012-H S9012-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		S9012 S9012-G S9012-H S9012-I 625Watts -55OC S9012H transistor s9012 transistor s9012h S9012 data sheet S9012 equivalent S9012 DATASHEET S9012 To92 transistor S9012H TO-92 PDF

    transistor s9012

    Abstract: s9012 transistor S9012
    Text: S9012 S9012 TRANSISTOR PNP TO-92 FEATURE Power dissipation 1. EMITTER 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: -0.5 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range Tj, Tstg: 1 2 3 -55℃ to +150℃


    Original     		S9012 -500mA -50mA -20mA, 30MHz transistor s9012 s9012 transistor S9012 PDF

    S9012H

    Abstract: transistor s9012h S9012G S9012
    Text: MCC S9012 S9012-G S9012-H S9012-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		S9012 S9012-G S9012-H S9012-I 625Watts -55OC S9012H transistor s9012h S9012G PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components S9012-G S9012-H S9012-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		S9012-G S9012-H S9012-I 625Watts -55OC S9012 PDF

    S9012 to-92

    Abstract: S9012H transistor s9012h
    Text: MCC TM Micro Commercial Components S9012-G S9012-H S9012-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		S9012-G S9012-H S9012-I 625Watts -55OC S9012 100uAdc, S9012 to-92 S9012H transistor s9012h PDF

    S9012H

    Abstract: transistor s9012h S9012 to-92
    Text: MCC TM Micro Commercial Components S9012-G S9012-H S9012-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		S9012-G S9012-H S9012-I 625Watts -55OC S9012 S9012H transistor s9012h S9012 to-92 PDF

    transistor s9012h

    Abstract: S9012H S9012H TO-92
    Text: MCC S9012-G S9012-H S9012-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		S9012-G S9012-H S9012-I 625Watts -55OC S9012 transistor s9012h S9012H S9012H TO-92 PDF

    S9012

    Abstract: S9012H
    Text: MCC S9012-G S9012-H S9012-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		S9012-G S9012-H S9012-I 625Watts -55OC S9012 S9012H PDF

    s9013 transistor

    Abstract: transistor S9013 S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR


    Original     		S9013 S9012 500mA 500mA, 30MHz S9013 s9013 transistor transistor S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012 PDF

    transistor s9012

    Abstract: S9012 S9012 equivalent Transistor S9013 S9013 S9012 to-92
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		S9012 S9013 -500mA -500mA, -50mA -20mA 30MHz transistor s9012 S9012 S9012 equivalent Transistor S9013 S9013 S9012 to-92 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS Ta=25℃ unless otherwise noted 3. COLLECTOR


    Original     		S9013 S9012 500mA 500mA, 30MHz PDF

    transistor s9012

    Abstract: S9012 H14-4 S9012 to-92 S9012 TO92 S9012 data sheet S9013 S9013 to-92 s9013 transistor transistor TO-92 S9013
    Text: S9012 PNP EPITAXIAL SILICON TRANSISTOR General Purpose Application TO-92 Collector Current Ic=-500mA Collector Power Dissipation Pc=625mW Complementary to S9013 Ta=25oC ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Unit Collector-Base Voltage VCBO


    Original     		S9012 -500mA 625mW S9013 -50mA -500mA -50mA transistor s9012 S9012 H14-4 S9012 to-92 S9012 TO92 S9012 data sheet S9013 S9013 to-92 s9013 transistor transistor TO-92 S9013 PDF

    S9013

    Abstract: S9013 TO92
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR


    Original     		S9013 S9012 500mA 500mA, 30MHz S9013 S9013 TO92 PDF

    s9013 transistor

    Abstract: S9013 transistor S9013 f-30MHz transistor s9012
    Text: S9013 Transistor NPN TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features — Complementary to S9012 Excellent hFE linearity — MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO VEBO Collector-Emitter Voltage


    Original     		S9013 S9012 500mA 500mA, 30MHz s9013 transistor S9013 transistor S9013 f-30MHz transistor s9012 PDF

    S9012 TO92

    Abstract: S9012
    Text: S9012 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage


    Original     		S9012 S9013 -500mA -500mA, -50mA -20mA -100A, S9012 TO92 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD T TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		S9012 S9013 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors S9012 TRANSISTOR PNP TO-92 1. EMITTER FEATURE Power dissipation 2. BASE 0.625 PCM: W (Tamb=25℃) 3. COLLECTOR Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range


    Original     		S9012 -500mA -50mA -20mA, 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: S9012 PNP General Purpose Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO


    Original     		S9012 270TYP PDF

    S9012

    Abstract: S9012 data sheet S9012 equivalent transistor s9012 S9012 TO92 S9012 to-92 DATASHEET S9012 S9012 transistor Weitron
    Text: S9012 PNP General Purpose Transistors TO-92 P b Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC Value


    Original     		S9012 270TYP S9012 S9012 data sheet S9012 equivalent transistor s9012 S9012 TO92 S9012 to-92 DATASHEET S9012 S9012 transistor Weitron PDF

    S9012

    Abstract: IC 555
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9012 TRANSISTOR（PNP） TO—92 FEATURE Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM: -0.5 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range


    Original     		S9012 O--92 -100A -100A 270TYP 050TYP S9012 IC 555 PDF

    transistor s9012

    Abstract: S9012
    Text: S9012 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :-0.5 A Collector-base voltage V (BR)CBO :-40 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


    Original     		S9012 -250uA -200uA -150uA -100uA -50uA transistor s9012 S9012 PDF

    Untitled

    Abstract: No abstract text available
    Text: | FORWARD INTERNATIONAL ELECTRONICS LID. S9013 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. Package: TO-92 * Complement to S9012 * Collector Current: Ic=500mA * High Total Power Dissipation: ptH>25mW


    OCR Scan     		S9013 S9012 500mA 100uA 500mA PDF

    LC 500-S

    Abstract: SS9013 SS9012
    Text: NPN EPITAXIAL SILICON TRANSISTOR SS9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • TO -92 High total pow er dissipation. P j= 62 5 m W High C ollector C urrent. (lc=500m A) C om plem entary to S S9012 Excellent hpE linearity.


    OCR Scan     		SS9013 625mW) 500mA) SS9012 100nA, LC 500-S SS9013 SS9012 PDF