S9012 TRANSISTOR Search Results

S9012 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

S9012 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
S9012H Abstract: transistor s9012h S9012G S9012H TO-92 transistor s9012 S9012-G gunze touch 8 wire Collector-current 0.5a To-92 Text: MCC S9012 S9012-G S9012-H S9012-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	S9012 S9012-G S9012-H S9012-I 625Watts -55OC S9012H transistor s9012h S9012G S9012H TO-92 transistor s9012 S9012-G gunze touch 8 wire Collector-current 0.5a To-92	PDF
S9012H Abstract: transistor s9012 transistor s9012h S9012 data sheet S9012 equivalent S9012 DATASHEET S9012 To92 transistor S9012H TO-92 Text: MCC S9012 S9012-G S9012-H S9012-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	S9012 S9012-G S9012-H S9012-I 625Watts -55OC S9012H transistor s9012 transistor s9012h S9012 data sheet S9012 equivalent S9012 DATASHEET S9012 To92 transistor S9012H TO-92	PDF
S9012H Abstract: transistor s9012h S9012G S9012 Text: MCC S9012 S9012-G S9012-H S9012-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	S9012 S9012-G S9012-H S9012-I 625Watts -55OC S9012H transistor s9012h S9012G	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components S9012-G S9012-H S9012-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	S9012-G S9012-H S9012-I 625Watts -55OC S9012	PDF
transistor s9012 Abstract: s9012 transistor S9012 Text: S9012 S9012 TRANSISTOR PNP TO-92 FEATURE Power dissipation 1. EMITTER 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: -0.5 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range Tj, Tstg: 1 2 3 -55℃ to +150℃	Original	S9012 -500mA -50mA -20mA, 30MHz transistor s9012 s9012 transistor S9012	PDF
S9012 to-92 Abstract: S9012H transistor s9012h Text: MCC TM Micro Commercial Components S9012-G S9012-H S9012-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	S9012-G S9012-H S9012-I 625Watts -55OC S9012 100uAdc, S9012 to-92 S9012H transistor s9012h	PDF
S9012H Abstract: transistor s9012h S9012 to-92 Text: MCC TM Micro Commercial Components S9012-G S9012-H S9012-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	S9012-G S9012-H S9012-I 625Watts -55OC S9012 S9012H transistor s9012h S9012 to-92	PDF
transistor s9012h Abstract: S9012H S9012H TO-92 Text: MCC S9012-G S9012-H S9012-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	S9012-G S9012-H S9012-I 625Watts -55OC S9012 transistor s9012h S9012H S9012H TO-92	PDF
S9012 Abstract: S9012H Text: MCC S9012-G S9012-H S9012-I omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	S9012-G S9012-H S9012-I 625Watts -55OC S9012 S9012H	PDF
transistor s9012 Abstract: S9012 H14-4 S9012 to-92 S9012 TO92 S9012 data sheet S9013 S9013 to-92 s9013 transistor transistor TO-92 S9013 Text: S9012 PNP EPITAXIAL SILICON TRANSISTOR General Purpose Application TO-92 Collector Current Ic=-500mA Collector Power Dissipation Pc=625mW Complementary to S9013 Ta=25oC ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Unit Collector-Base Voltage VCBO	Original	S9012 -500mA 625mW S9013 -50mA -500mA -50mA transistor s9012 S9012 H14-4 S9012 to-92 S9012 TO92 S9012 data sheet S9013 S9013 to-92 s9013 transistor transistor TO-92 S9013	PDF
s9013 transistor Abstract: transistor S9013 S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR	Original	S9013 S9012 500mA 500mA, 30MHz S9013 s9013 transistor transistor S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012	PDF
transistor s9012 Abstract: S9012 S9012 equivalent Transistor S9013 S9013 S9012 to-92 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	S9012 S9013 -500mA -500mA, -50mA -20mA 30MHz transistor s9012 S9012 S9012 equivalent Transistor S9013 S9013 S9012 to-92	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS Ta=25℃ unless otherwise noted 3. COLLECTOR	Original	S9013 S9012 500mA 500mA, 30MHz	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR PNP FEATURES z Complementary to S9013 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)	Original	OT-23 OT-23 S9012 S9013 -50mA -500mA, -20mA	PDF

s9013 transistor Abstract: S9013 transistor S9013 f-30MHz transistor s9012 Text: S9013 Transistor NPN TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO VEBO Collector-Emitter Voltage	Original	S9013 S9012 500mA 500mA, 30MHz s9013 transistor S9013 transistor S9013 f-30MHz transistor s9012	PDF
s9013 transistor Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz s9013 transistor J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR PNP FEATURES z Complementary to S9013 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 OT-23 S9012 S9013 -50mA -500mA, -20mA	PDF
S9013 SOT-23 Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23 Text: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units	Original	S9013 OT-23 OT-23 S9012 500mA 500mA, 30MHz S9013 SOT-23 J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23	PDF
transistor s9012 Abstract: S9012 2T1 SOT-23 S9012 SOT-23 S9012 SOT23 S9012 2T1 SOT-23 2t1 transistor S9013 SOT23 S9013 SOT-23 s9012 transistor Text: S9012 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MARKING: 2T1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units Collector-Base Voltage	Original	S9012 OT-23 OT-23 S9013 -100A, -50mA -500mA, transistor s9012 S9012 2T1 SOT-23 S9012 SOT-23 S9012 SOT23 S9012 2T1 SOT-23 2t1 transistor S9013 SOT23 S9013 SOT-23 s9012 transistor	PDF
transistor s9012 Abstract: S9012 s9012 transistor S9012 equivalent S9012 SOT-23 S9013 SOT-23 S9013 S9012 2T1 S9012 2T1 SOT-23 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR PNP FEATURES z Complementary to S9013 z Excellent hFE linearity 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2T1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 OT-23 S9012 S9013 -50mA -500mA, -20mA transistor s9012 S9012 s9012 transistor S9012 equivalent S9012 SOT-23 S9013 SOT-23 S9013 S9012 2T1 S9012 2T1 SOT-23	PDF
S9013 J3 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz S9013 J3	PDF
transistor s9012 Abstract: S9012 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD T TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	S9012 S9013 transistor s9012 S9012	PDF
PFNI S9012 Abstract: S9012 IC-500 S9012 2T1 pfni Text: 1 S9012 COLLECTOR PN P General Purpose Transistors 4 % V 2v SOT-23 ra rrrrn MAXIMUM RATINGS Rating \| Characteristics Value Symbol Collector-Emitter Voltage \| Collector-Base Voltage Emitter-Base VOItage_ Collector Current-Continuous 1	OCR Scan	S9012 TA-25t TA-25 S9012 ICF-500 -50mAdc) IC-500 100mA) 30MHz) PFNI S9012 S9012 2T1 pfni	PDF
Untitled Abstract: No abstract text available Text: \| FORWARD INTERNATIONAL ELECTRONICS LID. S9013 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. Package: TO-92 * Complement to S9012 * Collector Current: Ic=500mA * High Total Power Dissipation: ptH>25mW	OCR Scan	S9013 S9012 500mA 100uA 500mA	PDF

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S9012 TRANSISTOR Search Results

S9012 TRANSISTOR Result Highlights (5)

S9012 TRANSISTOR Datasheets Context Search

S9012H

S9012H

S9012H

Untitled

transistor s9012

S9012 to-92

S9012H

transistor s9012h

S9012

transistor s9012

s9013 transistor

transistor s9012

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s9013 transistor

s9013 transistor

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S9013 SOT-23

transistor s9012

transistor s9012

S9013 J3

transistor s9012

PFNI S9012

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