2t1 SOT-23
Abstract: S9012LT1
Text: S9012LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value -25 -40 -5 -500 300 2.4 417 S9012LT1=2T1 -25 -0.1 -40 -100 -5.0 -100 E=-20Vdc, I E= 0 -40 -5.0 WEITRON http://www.weitron.com.tw ) O -0.1 u -0.1 u -0.1 u S9012LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
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S9012LT1
OT-23
S9012LT1
-20Vdc,
-50mAdc)
-150uA
-100uA
-50uA
2t1 SOT-23
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Untitled
Abstract: No abstract text available
Text: S9012LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Complement to S9013LT1 Package:SOT-23 Collector Current :Ic= -500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃
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S9012LT1
S9013LT1
OT-23
-500mA
225mW
-50mA
-500mA
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012LT1 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range
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OT-23
OT-23
S9012LT1
-50mA
-500mA
-20mA
30MHz
S9012LT1
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2T1 SOT-23
Abstract: S9012LT1 sot23 marking a2
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE S9012LT1 2. EMITTER TRANSISTOR（ PNP ） 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : -0.5 A
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OT-23
OT--23
S9012LT1
-100A
-20mA
037TPY
950TPY
550REF
022REF
2T1 SOT-23
S9012LT1
sot23 marking a2
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s9013
Abstract: S9013LT1
Text: S9013LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 Complement to S9012LT1 Collector Current: Ic= 500mA High Total Power Dissipation: Pc=225Mw ABSOLUTE MAXIMUM RATINGS at Ta=25℃
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S9013LT1
OT-23
S9012LT1
500mA
225Mw
500mA
062in
300uS
s9013
S9013LT1
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Untitled
Abstract: No abstract text available
Text: S9012LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value -20 -40 -5 -500 300 2.4 417 S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R -0.1 -20 -40 -100 -5.0 -100 -35 -4.0 WEITRON http://www.weitron.com.tw S9012SLT1=12S 1/2 -0.15 u -0.15
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S9012LT1
OT-23
S9012PLT1
S9012QLT1
S9012RLT1
S9012SLT1
28-Apr-2011
-50mAdc)
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Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
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OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
B5817W
B5818W
Transistor S8550 2TY
Schottky barrier sot-23 Marking s4
sk 8050s
KL4 SOT-23
d882 to-92
BR S8050
bq d882
transistor D882 datasheet
S8050 equivalent
PCR100-6
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Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123
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huaxing20
OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
Y2 transistor
Transistor S8550 2TY
bq d882
transistor bc547 bk 045
transistor D882 datasheet
Z1 Transistor
TRANSISTOR MARK AQY
S8050 equivalent
K596-B
sot 89 D882
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2T1 SOT-23
Abstract: AV9012LT1 S9012LT1 AV9012
Text: @vic SOT-23 Plastic-Encapsulate Transistors SOT-23 AV9012LT1 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range
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OT-23
OT-23
AV9012LT1
-50mA
-500mA
-20mA
30MHz
S9012LT1
2T1 SOT-23
AV9012LT1
AV9012
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2t1 SOT-23
Abstract: S9012LT1
Text: SOT-23 P lastic-E n cap su late Transistors 1 .BASE 2 .EMITTER 3.COLLECTOR S9012LT1 TRANSISTO R PNP Power dissipation Pcm : 0 .3 W (Tamb=25°C) Collector current ICM : -0.5 A « Collector-base voltage V ( b r )c b o : -4 0 V Operating and storage junction temperature range
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OCR Scan
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OT-23
S9012LT1
-100u
2t1 SOT-23
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LB-50
Abstract: lb50
Text: M C C SOT-23 P lastic-E n cap su late T ra n s is to rs ^ 1 .B A S E S 9012LT1 TR A N SISTO R PNP 2 .EMITTER 3 .C O L L E C T O R FEATURES '¿h Kb Power dissipation Pcm : 0.3 W ( Tamb=25"C ) . 2.4 . Collector current 13 « |CM : -0.5 A Collector-base voltage
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OCR Scan
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OT-23
9012LT1
S9012LT1
S9012LT1
LB-50
lb50
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