7060a
Abstract: TOP3 package bup transistor
Text: S IE M E N S BUP 101 SIRET Siemens Ring Emitter Transistor VCE = 1000 V lc =15 A • • • N channel B rea kdo w n-p roo f Package: TO-218 AA TOP-3 ') Type Ordering code BUP 101 C 6 7060-A 1000-A 2 Maximum Ratings at T{ = 25 °C, unless otherw ise specified.
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O-218
060-A
000-A
7060a
TOP3 package
bup transistor
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2SC4295
Abstract: 2sc4295m 2sc4620
Text: 2SC4295M/2SC4620 h 7 > y Z . & / T ransistors 2SC4295M 2SC 4620 7° U •-1 ^ N PN y V 3 > h 7 > y * * = Triple Diffused Planar NPN Silicon Transistors Ü Ü ÎJ ± ^ -Y y ^ > ^ /H ig h Voltage Switching « ^ J F i^ tü E I/D im e n s io n s Unit : mm •
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2SC4295M/2SC4620
2SC4295M
100mA)
2SC4295
2sc4620
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BUP101
Abstract: bup transistor A 671 transistor
Text: • 823SbD5 QDSlBb^ 2 O S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF 47E I> r-3 3 -13 BUP101 SIRET Siemens Ring Emitter Transistor VGe = 1000 V /0 =15 A • N channel • Breakdown-proof • Package: TO-218 AA TO P-3 1) Type Ordering code B U P 101 C 6 7 060-A 1000-A 2
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823SbD5
QDS13bci
BUP101
O-218
C67060-A1000-A2
01234s6789a10
r-33-/3
BUP101
bup transistor
A 671 transistor
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2SC5012-T1
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •
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2SC5012
2SC5012-T1
2SC5012-T2
2SC5012-T1
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Untitled
Abstract: No abstract text available
Text: 4302571 0 0 5 4 7 5 ‘ï LT? • HAS ÎH HARRIS RFD12N06RLE, RFD12N06RLESM U U RFP12N06RLE S E M , C O N D U C T O R January1994 N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Packages • 12A,60V • r DS(on) RFD12N06RLE (TO-251)
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RFD12N06RLE,
RFD12N06RLESM
RFP12N06RLE
ary1994
RFD12N06RLE
O-251)
O-252)
AN7254
AN-7260.
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TSM 1416
Abstract: TRANSISTOR C 3068 C2580 BFG16A ts 4141 TRANSISTOR TRANSISTOR D 1691
Text: b t .S a ' ìa i Philips Semiconductors 0024774 _ T i b • APX Product specification NPN 2 GHz wideband transistor BFG16A N APIER P H I L I P S / D I S C R E T E FEATURES b?E D PINNING • High power gain PIN DESCRIPTION • Good thermal stability
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G024774
BFG16A
OT223
OT223.
TSM 1416
TRANSISTOR C 3068
C2580
BFG16A
ts 4141 TRANSISTOR
TRANSISTOR D 1691
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2SD675
Abstract: 2sd676 2SD674 2SD673 2SB631 2SD600 2SD612 2SD613 2SD638 2SD639
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SD669
7c-25-C)
2SD673
2SD674
2SD675
2SD676
2SD675
2SD673
2SB631
2SD600
2SD612
2SD613
2SD638
2SD639
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX718 ISSUE 4 - MAY 1998_ FEATURES * 6 A Peak pulse c u rre n t * E xce lle n t h FE c h a ra cte ristics up to 6 A pulsed * lo w s a tu ra tio n v o lta g e * lc C ont 2.5A
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ZTX718
ZTX618
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4910E
Abstract: MGF4914E MGF4918E
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series SUPER LOW NOISE InGaAs H E M T j DESCRIPTION The M G F4910E OUTLINE DRAWING series su per-lo w -n oise HEMT U n it m illim e te rs inches (High Electron M o bility Transistor) is designed fo r use in X to
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F4910E
4910E
MGF4914E
MGF4918E
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PMBFJ111
Abstract: No abstract text available
Text: b b S B 'm 0024DS2 W «APX P h ilip s S e m ic o n d u c to rs P M B F J111/P M B F J112/ PM B FJ113 Data sheet status Product specification date of issue July 1993 N-channel junction FETs N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING - SOT23
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0024DS2
J111/P
J112/
FJ113
PMBFJ111)
PMBFJ112)
PMBFJ113)
DD24D55
PMBFJ111/PMBFJ112/PMBFJ113
PMBFJ111
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PMBFJ111
Abstract: PMBFJ112 PMBFJ113 Silicon Junction FETs Scans-00472
Text: b b S B ' m 0024052 TÔT * A P X Philips Semiconductors PMBFJ111/PMBFJ112/ PMBFJ113 Data sheet status Product specification date of issue July 1993 N-channel junction FETs N AMER PHILIPS/DISCRETE PINNING - SOT23 PIN CONFIGURATION FEATURES b?E 1> DESCRIPTION
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PMBFJ111/PMBFJ112/
PMBFJ113
PMBFJ111)
MBB114
PMBFJ112)
PMBFJ113)
DD54DSS
PMBFJ111/PMBFJ112/PMBFJ113
PMBFJ111
PMBFJ112
PMBFJ113
Silicon Junction FETs
Scans-00472
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NE42484A
Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE42484A
NE42484A
NE42484A-SL
NE42484A-T1
transistor NEC D 986
ne42484
IC ATA 2388
L to Ku BAND LOW NOISE AMPLIFIER
NEC Ga FET marking L
nec gaas fet marking
NEC Ga FET marking A
KU 506 transistor
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NEC 2532 n 749
Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation
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2SC5014
2SC5014-T1
2SC5014-T2
2SC5014)
NEC 2532 n 749
NEC 2532
PT1060
transistor NEC D 822 P
transistor NEC D 587
NEC 2134 transistor
transistor c 6091
transistor sp 772
SP 2822
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LA 7693
Abstract: ic CD 4047 7737 transistor
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain
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2SC5014
2SC5014-T1
2SC5014-T2
LA 7693
ic CD 4047
7737 transistor
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2ss9014
Abstract: ss8015 A 671 transistor SS9013 SS9014 U007 transistor ss9014 SS9012 T-31-21 50nr
Text: IM E D SAMSUNG SEM ICONDUCTOR . INC I 7*^4142 " SS9012 4 I 00073*1 T - f i ~ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total power dissipation: PT=825mW High Collector Current. (Ic = -500mA) Complementary to SS9013
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71b4142
SS9012
825mW)
-500mA)
SS9013
Breakdo4142
SS9014
fe-14
1-10C
2ss9014
ss8015
A 671 transistor
SS9013
U007
transistor ss9014
T-31-21
50nr
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NEC k 2134 transistor
Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm
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NE32584C
NE32584C
NE32584C-T1A
NE32584C-SL
NE32584C-T1
NEC k 2134 transistor
k 2134 nec
nec gaas fet marking
NEC D 809 k
NEC 2134 transistor
NE32584
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TRANSISTOR GB 558
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •
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2SC5013
2SC5013-T1
2SC5013-T2
TRANSISTOR GB 558
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2N3440 2N5416 REPLACEMENT
Abstract: 2N5294 replacement 2N5296 RCA 2N6108 RCA 2N5954 2N5416 REPLACEMENT 2N3772 RCA RCA 40250 2N5781 2N6107
Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 2 0 0 W . . . V C E to 1 2 5 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. P y * 40 W max. TO-66 * lc * - 6 A max. P y - 40 W max. 1TO-66)* le « 7 A max. Py - 40 W max. V E R S A W ATT
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IT039I
O-2201
lc-15
ITO-31
O-2201
90x90
2N3440 2N5416 REPLACEMENT
2N5294 replacement
2N5296 RCA
2N6108 RCA
2N5954
2N5416 REPLACEMENT
2N3772 RCA
RCA 40250
2N5781
2N6107
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4856a
Abstract: 2n4656 4861a 4859A 2N484 2N4857A 2N465 NS2N 2K48 2N 4358 transistor
Text: TYPES 2N4856 THRU 2N4861, 2N48S6A THRU 2N4861A N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L-S 7 3 11911, JU N E 1973 SYM M ETRIC A L N-CHANNEL F IE L D -E F F E C T TRA N SISTO RS FOR HIGH-SPEED COMMUTATOR AND CHOPPER APPLICATIO NS
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2N4856
2N4861,
2N48S6A
2N4861A
2N4856,
2N4856A,
2N4859,
2N4859A)
4856a
2n4656
4861a
4859A
2N484
2N4857A
2N465
NS2N
2K48
2N 4358 transistor
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Untitled
Abstract: No abstract text available
Text: 6A Adjustable, and Fixed 33V and 5V Linear Regulators D e scrip tio n The CS5206 -X series of linear regu lators provides 6A at adjustable and fixed voltages of 3.3V and 5V with an accuracy of ±1% and ±2% respectively. The adjustable version uses tw o external resistors to set
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CS5206
T0-220
O-220
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ZO 107 MA
Abstract: 341S
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5009
2SC5009
ZO 107 MA
341S
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300W TRANSISTOR AUDIO AMPLIFIER
Abstract: 40360 2N6289 40877 BD243 2N5781 2N5954 2N6107 2N6248 2N6292
Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . P f to 200 W . . . V C E to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT
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IT039I
O-2201
lc-15
ITO-31
O-2201
90x90
300W TRANSISTOR AUDIO AMPLIFIER
40360
2N6289
40877
BD243
2N5781
2N5954
2N6107
2N6248
2N6292
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transistor NEC B 617
Abstract: nec. 5.5 473
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5007
2SC5007
transistor NEC B 617
nec. 5.5 473
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SN75450B
Abstract: SN55450 SG75450BJ 79lc SN55450B
Text: SG55450B/60/70 SERIES SILICON LINEAR IN TEGRATED C IRCUITS DUAL PERIPHERAL POSITIVE-AND DRIVER DESCRIPTION FEATURES The SG55450B/SG55460/SG55470 SG75450B/SG75460/SG75470 series of dual peripheral Posltive-AND drivers are a family of versatile devices designed for use in systems that employ TTL or DTL logic. This
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SG55450B/60/70
300mA
SG55450B/SG55460/SG55470
SG75450B/SG75460/SG75470)
SN55450B/60/70
SN75450B/60/70)
SN75450B
SN55450
SG75450BJ
79lc
SN55450B
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