LBSS123LT1G
Abstract: LBSS123LT3G
Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate
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LBSS123LT1G
OT-23
3000/Tape
LBSS123LT3G
10000/Tape
195mm
150mm
LBSS123LT1G
LBSS123LT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate
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LBSS123LT1G
OT-23
3000/Tape
LBSS123LT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G 3 FEATURE ƽ Pb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Device 2 SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate
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LBSS123LT1G
OT-23
3000/Tape
LBSS123LT3G
10000/Tape
195mm
150mm
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mosfet Marking SA s
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1 LBSS123LT1 FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Shipping SA 3000/Tape&Reel SA Pb-Free 3000/Tape&Reel SA 10000/Tape&Reel SA (Pb-Free) 10000/Tape&Reel
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LBSS123LT1
OT-23
3000/Tape
10000/Tape
LBSS123LT1G
LBSS123LT3
mosfet Marking SA s
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0615
Abstract: diode BY 399 BY 399 M 10 diode w sa diode MARKING SA DIODE
Text: DSB 1 I 60 SA advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product DSB 1 I 60 SA (S1HB) 60 V 1A 0.50 V Features / Advantages: Applications: Package: ● Very low Vf
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DO-214AC)
0615
diode BY 399
BY 399 M 10 diode
w sa diode
MARKING SA DIODE
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diode BY 399
Abstract: MARKING SA DIODE BY 399 M 10 diode
Text: DSB 1 I 40 SA advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product DSB 1 I 40 SA (S1FB) 40 V 1A 0.40 V Features / Advantages: Applications: Package: ● Very low Vf
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DO-214AC)
diode BY 399
MARKING SA DIODE
BY 399 M 10 diode
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SA-100V
Abstract: diode avalanche DSA MARKING SA DIODE
Text: DSA 1 I 100 SA advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product DSA 1 I 100 SA (S1KA) 100 V 1A 0.65 V Features / Advantages: Applications: Package: ● Very low Vf
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DO-214AC)
SA-100V
diode avalanche DSA
MARKING SA DIODE
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RB751V-40
Abstract: No abstract text available
Text: RB751V-40 0.03A Surface Mount Schottky Barrier Diode Voltage Range 40 Volts 0.03 Amperes SOD-323F Mechanical Data Case: SOD-323F, Molded plastic Terminals: Solderable per MIIL-STD-202, Method 208 Polarity: Cathode band Marking : Date Code and Type Code Type Code: SA
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RB751V-40
OD-323F
OD-323F,
MIIL-STD-202,
RB751V-40)
RB751V-40
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3V02
Abstract: No abstract text available
Text: – E ET L O BS BSS123 O –N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code
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O-236AB*
BSS123
O-236AB:
BSS123
OT-23.
3V02
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Part Marking Information
Abstract: No abstract text available
Text: Part Marking Information www.vishay.com Vishay Semiconductors SMA, SMB, SMC Cathode band SA XY M Type code Date code Halogen-free compound mark Type Code Date Code S X A Voltage Schottky standard: C = 15 V E = 30 V F = 40 V H = 60 V J = 100 V Schottky MBR series
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04-Dec-14
Part Marking Information
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SOT-23 marking 717
Abstract: SAP SOT23 sot-23 MARKING CODE 718
Text: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
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BSS123
O-236AB:
O-236AB*
OT-23.
SOT-23 marking 717
SAP SOT23
sot-23 MARKING CODE 718
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33A SMC
Abstract: Vishay DaTE CODE VISHAY MARKING 10 SMA
Text: Part Marking Information Vishay Semiconductors SMA, SMB, SMC Cathode band SA XY M Type code Date code Halogen-free compound mark Type Code Date Code S X A Voltage Schottky standard: C = 15 V E = 30 V F = 40 V H = 60 V J = 100 V Y Month: 1 to 9 = January to September
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06-Aug-10
33A SMC
Vishay DaTE CODE
VISHAY MARKING 10 SMA
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SAP SOT23
Abstract: marking SA sot-23 BSS123 BSS123 5A marking 8A sot-23 p-channel SOT-23 20V SOT-23 marking 2a to-236 TO-236AB sot-23 MARKING CODE GS 5
Text: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
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BSS123
O-236AB:
O-236AB*
OT-23.
SAP SOT23
marking SA sot-23
BSS123
BSS123 5A
marking 8A sot-23
p-channel SOT-23 20V
SOT-23 marking 2a
to-236
TO-236AB
sot-23 MARKING CODE GS 5
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SBE001
Abstract: SB20015M SS2003M SS3003CH ec2d02b SB007-W03C SB10015M SBS004M ss200 SS10015M
Text: Schottky Barrier Diodes Shortform Table Surfacemount Type Package Series CONTENTS •Packages ■Quick selection guide ■Recommendation circuit diagram ■Lineup according to packages ・ECSP1006-2 ・ECSP1008-2 ・ECSP1608-4 ・SSFP ・SCH6 ・SMCP ・MCP
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ECSP1006-2
ECSP1008-2
ECSP1608-4
SB30W03T
SB40W03T
SB10W05T
SB25W05T
SBE001
SB20015M
SS2003M
SS3003CH
ec2d02b
SB007-W03C
SB10015M
SBS004M
ss200
SS10015M
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ZXTN617MATA
Abstract: DFN2020B-3 ZXTN617MA
Text: A Product Line of Diodes Incorporated ZXTN617MA 15V NPN LOW SA TURA TION TRAN SISTOR Features Mechanical Data • • • • • • • • • • • • • • • VCEO = 15V RSAT = 45 mΩ IC = 4.5A Continuous Collector Current Low Equivalent On Resistance
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ZXTN617MA
100mV
DFN2020B-3
J-STD-020
DS31888
ZXTN617MATA
DFN2020B-3
ZXTN617MA
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Untitled
Abstract: No abstract text available
Text: 1N5711W SURFACE MOUNT SCHOTTKY BARRIER DIODE SPICE MODEL: 1N5711W Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion
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1N5711W
OD-123
OD-123,
J-STD-020A
MIL-STD-202,
DS11015
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Untitled
Abstract: No abstract text available
Text: 1N5711W SURFACE MOUNT SCHOTTKY BARRIER DIODE SPICE MODEL: 1N5711W Features • · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion
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1N5711W
OD-123
OD-123,
J-STD-020A
MIL-STD-202,
DS11015
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erc06
Abstract: A537 A536
Text: ERC06H sa • « * » • * » : Outline Drawings FAST RECO VERY DIODE ■ 4$^ : Features : Marking Most suitable for color T.V. damper < 7- 3 —K : S : Blue High voltage by mesa design. Color code High reliability Abridged type name : Applications <T3 - C">
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ERC06H
I95t/R89)
erc06
A537
A536
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ERC06
Abstract: No abstract text available
Text: ERC06H sa • « * » • * » : Outline Drawings FAST RECOVERY DIODE ■ 4 $ ^ : Features : Marking Most suitable for color T.V. damper < 7 - High voltage by mesa design. 3 —K : S Color code : Blue <T3 High reliability Abridged type name - C"> 05 $ 7 :*
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ERC06
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A536 diode
Abstract: A536 ERC06 A537
Text: ERC06H sa • « * » • * » : Outline Drawings FAST RECO VERY DIODE ■ 4$^ : Features : Marking Most suitable for color T.V. damper < 7 - 3 — K:S C olor code : Blue High voltage by mesa design. <T3 High reliability Abridged typ e name : Applications
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ERC06
A536 diode
A536
A537
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE o. sa / bov EP05Q06 FEATURES OJEDEC SOD-123 Package oV ery Low profile 1.1mm Max o High Surge Capability oL ow Thermal Resistance OUL 94, VO o Packaged in 8mm tape Device Marking ^ ^ ^ Month of Mfg. A = Jan. B = Feb.-L = Dec. Year of Mfg. 7 = 1997
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EP05Q06
OD-123
EP05Q06
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bss123 marking sa
Abstract: No abstract text available
Text: Supertex Inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R d S o n Order Number / Package ' d (ON) Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* SA* 100V 6.0Q 0.5A BSS123 where * = 2-week alpha date code
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BSS123
O-236AB*
O-236AB:
bss123 marking sa
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Untitled
Abstract: No abstract text available
Text: Supertex inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs R dS ON (m ax) Id(ON) (m in ) 100V 6.0Q. 0.5A O rder N um ber / Package Product marking for TO-236AB: TO-236AB* SA* BSS123 where = 2-week alpha date code
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BSS123
O-236AB:
O-236AB*
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SOT-23 Product Code bss123
Abstract: DSS SOT23 marking 9a sot-23
Text: ^ B S S 1 23 Supertex ine. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdgs R dS ON (max) îf b v dss/ 100V 6£2 0.5A Product marking for SOT-23: Order Number / Package SOT-23 SA* BSS123 where * = 2-week alpha date code
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OT-23
BSS123
OT-23:
SOT-23 Product Code bss123
DSS SOT23
marking 9a sot-23
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