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    SAMSUNG 2GB X8 NAND FLASH Search Results

    SAMSUNG 2GB X8 NAND FLASH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    54H30J Rochester Electronics LLC NAND Gate Visit Rochester Electronics LLC Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J/C Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy
    946HM/C Rochester Electronics LLC 946 - NAND Gate Visit Rochester Electronics LLC Buy

    SAMSUNG 2GB X8 NAND FLASH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    nand512w3a2dn6

    Abstract: NAND02GW3B2DZA6 NAND512R3A2DZA6E NAND512W3A2DN6E NAND01GW3B2CZA6E VFBGA63 nand02gw3b2dn6e NAND256W3A0BE06 NAND01GW3B2CN6E NAND02GW3B2DZA6E
    Text: product line card Numonyx NAND flash memory Numonyx® NAND flash memory A broad offering of discrete parts to meet a variety of application requirements PRODUCT overview Density Part Number Density NAND Family Voltage Bus Width - Flash Package Type Package Dimension


    Original     		PDF NAND128W3A2BN6E TSOP48 12x20mm NAND128W3A0BN6E NAND128W3A2BDI6 NAND256W3A2BN6E nand512w3a2dn6 NAND02GW3B2DZA6 NAND512R3A2DZA6E NAND512W3A2DN6E NAND01GW3B2CZA6E VFBGA63 nand02gw3b2dn6e NAND256W3A0BE06 NAND01GW3B2CN6E NAND02GW3B2DZA6E

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    16GB Nand flash dual channel

    Abstract: hynix nand flash samsung 8Gb nand flash Hynix 64Gb Nand flash micron DDR3 SODIMM address mapping edge connector nand flash HYNIX MLC dms-59 WD3RE04GX818 hynix nand flash 2gb wd2ue01Gx818
    Text: ourl ocat i ons FLASH EMBEDDED PRODUCTS DRAM MODULES Wi nt ecI ndust r i esBr anches USA LosAngel es,CA Nor cr oss,Geor gi a Pi scat away,New Jer sey Eur ope Br aunschwei g,Ger many Asi a Tai pei ,Tai wan Kowl oon,HongKong Shenzhen,Chi na Wi nt ecI ndust r


    Original     		PDF

    samsung 2GB X16 Nand flash

    Abstract: SAMSUNG MCp samsung camera module samsung NAND Flash DIE MCP Technology Trend samsung 2GB Nand flash SAMSUNG MCp nand ddr SAMSUNG MCp nand ddr sram 256mb 512MB NOR FLASH
    Text: Multi-Chip Package Technology from Samsung The ultimate memory solution for mobile devices MCPs: New Memory Solution for Today’s Handhelds As the popularity of handheld electronic devices continues to expand, the Best Source for MCPs memory solution of choice for designers of these products has become


    Original     		PDF BR-06-MEM-001 samsung 2GB X16 Nand flash SAMSUNG MCp samsung camera module samsung NAND Flash DIE MCP Technology Trend samsung 2GB Nand flash SAMSUNG MCp nand ddr SAMSUNG MCp nand ddr sram 256mb 512MB NOR FLASH

    s3c2442

    Abstract: sc32442 Samsung SC32442 s3c2442 datasheet lcd stn 4096 mobile camera interface microcontroller SAMSUNG MCP "TSP Controller" ARM920T rom samsung 1Gb nand flash
    Text: Samsung SC32442 MSP Multi Stacked Package Leading-Edge Application Processor with single package incorporating Memory MCP Product Brief SC32442 MSP product is a proprietary solution provided exclusively by Samsung Electronics. SC32442 includes an S3C2442 AP


    Original     		PDF SC32442 S3C2442 ARM920T 512Mb 128MB Samsung SC32442 s3c2442 datasheet lcd stn 4096 mobile camera interface microcontroller SAMSUNG MCP "TSP Controller" ARM920T rom samsung 1Gb nand flash

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    153-FBGA

    Abstract: 153FBGA 153Ball FBGA samsung "nand flash" derating MCP LPDDR 1Gb 512Mb K522H1HACF-B050 k522h1 MCP 256M nand samsung mobile DDR MCP 1Gb nand 512mb dram 130 2gb nand mcp
    Text: Rev. 1.0, Oct. 2010 K522H1HACF-B050 MCP Specification 2Gb 128M x16 NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K522H1HACF-B050 A10/AP 153-FBGA 153FBGA 153Ball FBGA samsung "nand flash" derating MCP LPDDR 1Gb 512Mb K522H1HACF-B050 k522h1 MCP 256M nand samsung mobile DDR MCP 1Gb nand 512mb dram 130 2gb nand mcp

    s3c6410x

    Abstract: S3C6410 s3c6410 external interrupt s3c6410 arm1176JZF datasheet samsung S3C6410 s3c6410 datasheet Samsung S3C6410 ARM S3C6410X5D S3C6430 oneDRAM
    Text: y inaarry imin PPrreelilm Product Technical Brief S3C6410 July 2008 Overview S3C6410 is a 16/32-bit RISC cost-effective, low power, high performance micro-processor solution for mobile phones, Portable Navigation Devices and other general applications. To provide optimized H/W performance for the


    Original     		PDF S3C6410 S3C6410 16/32-bit 64/32-bit 424-pins S3C6410X5A 491-pins 533MHz 667MHz s3c6410x s3c6410 external interrupt s3c6410 arm1176JZF datasheet samsung S3C6410 s3c6410 datasheet Samsung S3C6410 ARM S3C6410X5D S3C6430 oneDRAM

    Untitled

    Abstract: No abstract text available
    Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 30.2001


    Original     		PDF K9K2G08Q0M-YCB0 K9K2G08U0M-YCB0 K9K2G16Q0M-YCB0 K9K2G16U0M-YCB0

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: No abstract text available
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History History Draft Date Remark 0.0 1. Initial issue July. 5. 2001


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 SAMSUNG 4gb NAND Flash Qualification Report

    samsung 2GB X16 Nand flash

    Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9F1G16Q0M-YCB0 samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 samsung 2GB X16 Nand flash SAMSUNG 4gb NAND Flash Qualification Report samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: No abstract text available
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 SAMSUNG 4gb NAND Flash Qualification Report

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: samsung 2GB X16 Nand flash samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report LA14
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 SAMSUNG 4gb NAND Flash Qualification Report samsung 2GB X16 Nand flash samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report LA14

    Untitled

    Abstract: No abstract text available
    Text: San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel. 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 ELECTRONICS March. 2003 1Gb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table


    Original     		PDF K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0 K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0

    K524G2GACB-A050

    Abstract: samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr
    Text: K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K524G2GACB-A050 A10/AP K524G2GACB-A050 samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr

    SAMSUNG NAND Flash Qualification Report

    Abstract: SAMSUNG 4gb NAND Flash Qualification Report
    Text: San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel. 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 ELECTRONICS March. 2003 1Gb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table


    Original     		PDF K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0 K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0 SAMSUNG NAND Flash Qualification Report SAMSUNG 4gb NAND Flash Qualification Report

    K9W4G08U1M

    Abstract: K9K2G08Q0M K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-FCB0 K9K2G16Q0M K9K2G16U0M K9W4G16U1M samsung 2GB X16 Nand flash 256Mx
    Text: K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001 Advance 0.1 1. IOL R/B of 1.8V device is changed.


    Original     		PDF K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M K9W4G08U1M K9K2G08Q0M K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-FCB0 K9K2G16Q0M K9K2G16U0M K9W4G16U1M samsung 2GB X16 Nand flash 256Mx

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan     		PDF 120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand