K9F2G08U0C
Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-10-ALL-001
K9F2G08U0C
K9K8G08U0D
K9ABG08U0A
K4X2G323PC
K9F4G08U0B-PCB0
K9F1G08U0C
K9F2G08U0B
K9F2G08U0B-PCB0
K9F1G08U0D-SCB0
K9WBG08U1M-PIB0
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connector SAMSUNG 30 PIN
Abstract: LT104 LT104V3-102
Text: DIGITAL-LOGIC AG SAMSUNG LT104V3-102 Samsung LT104V3-102 Model Manufacturer Resolution Number of Colors Technology Interface LT104V3-102 Samsung 640x480 262’000 TFT-Color Digital Filename Bios code Bios/ Table version Used Controller Date of adaption Size
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LT104V3-102
640x480
LT104
16bit
24bit
1LT104
connector SAMSUNG 30 PIN
LT104V3-102
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Untitled
Abstract: No abstract text available
Text: S3FN429 32-bit CMOS Microcontrollers Revision 0.00 September 2011 User's Manual 2011 Samsung Electronics Co., Ltd. All rights reserved. Important Notice Samsung Electronics Co. Ltd. "Samsung" reserves the right to make changes to the information in this publication
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S3FN429
32-bit
44-QFP-1414
44-QFP-1414
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Samsung P/N : CL10C070CB8NNNC CAP, 7㎊ ㎊, 50V, ±0.25㎊ ㎊, C0G, 0603 • Description : • Supplier : Samsung electro-mechanics • Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance
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CL10C070CB8NNNC
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25Mohm
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Abstract: No abstract text available
Text: SPECIFICATION • Samsung P/N : CL10C070DB8NNNC CAP, 7㎊ ㎊, 50V, ±0.5㎊ ㎊, C0G, 0603 • Description : • Supplier : Samsung electro-mechanics • Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance
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CL10C070DB8NNNC
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Samsung P/N : CL10C070CB8NCNC CAP, 7㎊ ㎊, 50V, ±0.25㎊ ㎊, C0G, 0603 • Description : • Supplier : Samsung electro-mechanics • Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance
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CL10C070CB8NCNC
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Samsung P/N : CL10C070BB8NNNC CAP, 7㎊ ㎊, 50V, ±0.1㎊ ㎊, C0G, 0603 • Description : • Supplier : Samsung electro-mechanics • Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance
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CL10C070BB8NNNC
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25Mohm
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Samsung P/N : CL05C070CB5NNNC CAP, 7㎊ ㎊, 50V, ±0.25㎊ ㎊, C0G, 0402 • Description : • Supplier : Samsung electro-mechanics • Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance
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CL05C070CB5NNNC
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Samsung P/N : CL21C070CBANNNC CAP, 7㎊ ㎊, 50V, ±0.25㎊ ㎊, C0G, 0805 • Description : • Supplier : Samsung electro-mechanics • Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance
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CL21C070CBANNNC
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25Mohm
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10sec.
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K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Samsung P/N : CL05C070CB5NCNC CAP, 7㎊ ㎊, 50V, ±0.25㎊ ㎊, C0G, 0402 • Description : • Supplier : Samsung electro-mechanics • Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance
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CL05C070CB5NCNC
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Samsung P/N : CL05C070DB5NNNC CAP, 7㎊ ㎊, 50V, ±0.5㎊ ㎊, C0G, 0402 • Description : • Supplier : Samsung electro-mechanics • Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance
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CL05C070DB5NNNC
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25Mohm
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50Mohm
10sec.
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Samsung P/N : CL21C070DBANNNC CAP, 7㎊ ㎊, 50V, ±0.5㎊ ㎊, C0G, 0805 • Description : • Supplier : Samsung electro-mechanics • Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance
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CL21C070DBANNNC
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25Mohm
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Samsung P/N : CL05C070DB5NNND CAP, 7㎊ ㎊, 50V, ±0.5㎊ ㎊, C0G, 0402 • Description : • Supplier : Samsung electro-mechanics • Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series ② Size ③ Dielectric ④ Capacitance
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CL05C070DB5NNND
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50Mohm
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MSM 7227
Abstract: S6E63D6 MSM 7230 MSM 7225 80-SYSTEM MDDI IC 7224 R68H amoled samsung AMOLED Display module
Text: S6E63D6 Rev.1.10 MOBILE DISPLAY DRIVER IC Property of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S6E63D6 Data Sheet_REV 1.10 Mobile Display Driver IC Trademark & Copyright Information Copyright © 2007-2007 Samsung Electronics Co., Ltd. All Rights Reserved.
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S6E63D6
S6E63D6
MSM 7227
MSM 7230
MSM 7225
80-SYSTEM
MDDI
IC 7224
R68H
amoled samsung
AMOLED Display module
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schematic diagram electrical BIKES USING DC MOTOR
Abstract: schematic diagram 48v bldc motor speed controller schematic diagram 48v dc motor speed controller e-bike motor controller 36v DC MOTOR SPEED CONTROLLER schematic S3F84A5 electric bicycle BLDC motor control schematic diagram 48V 500W Controller 75NF75 pwm e-bike
Text: APPLICATION NOTE S3F84A5 Electric Bike Controller System January 2010 Revision 1.10 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2010 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
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S3F84A5
S3F84A5
schematic diagram electrical BIKES USING DC MOTOR
schematic diagram 48v bldc motor speed controller
schematic diagram 48v dc motor speed controller
e-bike motor controller
36v DC MOTOR SPEED CONTROLLER schematic
electric bicycle BLDC motor control
schematic diagram 48V 500W Controller
75NF75
pwm e-bike
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KM416V4104BS
Abstract: No abstract text available
Text: DRAM MODULE KMM374F404BS KMM374F404BS EDO Mode without buffer 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F404BS is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F404BS
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KMM374F404BS
KMM374F404BS
4Mx16
4Mx72bits
4Mx16bits
300mil
168-pin
KM416V4104BS
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sp2504c
Abstract: MP0402H sp0411n sp0802N SP0842N DVD RW circuit diagram HD080HJ SP2004C sp2014n SP0822N
Text: Optical Storage Devices Summer 2006 The comprehensive line of optical storage products coming out of Samsung’s manufacturing facilities in South Korea and the Philippines leads the industry. Supported by logistics centers around the world, this operation taps into Samsung’s
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600KB/sec)
800KB/sec)
100GB
120GB
160GB
250GB
sp2504c
MP0402H
sp0411n
sp0802N
SP0842N
DVD RW circuit diagram
HD080HJ
SP2004C
sp2014n
SP0822N
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M466S1723MT3-L10
Abstract: No abstract text available
Text: M466S1723MT3 PC66 SODIMM M466S1723MT3 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S1723MT3 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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M466S1723MT3
M466S1723MT3
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16Mx8,
400mil
144-pin
M466S1723MT3-L10
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M466S0824DT2-L1L
Abstract: No abstract text available
Text: M466S0824DT2 PC66 SODIMM M466S0824DT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S0824DT2 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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M466S0824DT2
M466S0824DT2
8Mx64
4Mx16,
400mil
144-pin
M466S0824DT2-L1L
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Untitled
Abstract: No abstract text available
Text: b7E T> m TTbMlME G01S111 S04 SAMSUNG ELECTRONICS INC DRAM MODULES KMM594020B 4M x9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020B is a4 M b its x 9 Dynamic RAM high density memory module. The Samsung KMM594020B
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G01S111
KMM594020B
KMM594020B
20-pin
30-pin
22/iF
KMM594020B-6
110ns
KMM594020B-7
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E » • V'ìbMmE GD1SE3T E74 KMM5916000/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5916000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung
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KMM5916000/T
KMM5916000/T
KM41C16000/T
24-pin
30-pin
22/uF
KMM5916000-6
110ns
KMM5916000-7
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2SC3133 cross reference
Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905
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2N4401
2N5401
2N5551
2SA1004
2SA1010
2SA1013
2SA1015
2SA1016
2SA1017
2SA1019
2SC3133 cross reference
Hitachi 2sc281
NEC D882
A564A
D1163A
2sC1815 cross reference
a628a
krc1211
KRA2203
NEC D288
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AKR 121
Abstract: ADQ24 KMM466S824BT2-F0
Text: KMM466S824BT2 144pin SDRAM SOPIMM KMM466S824BT2 SDRAM SODIMM 8Mx64 SDRAM SODfMM based on 4Mx16,4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S824BT2 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM466S824BT2
KMM466S824BT2
144pin
8Mx64
4Mx16
400mil
144-pin
AKR 121
ADQ24
KMM466S824BT2-F0
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