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    SAMSUNG 6410 Search Results

    SAMSUNG 6410 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    164-10SL Coilcraft Inc Variable Inductor, Air-Core, Shielded, 2323, Visit Coilcraft Inc
    164-10A06L Coilcraft Inc Variable Inductor, 0.148uH Min, 0.223uH Max, Aluminum-Core, Unshielded, 2020, ROHS COMPLIANT Visit Coilcraft Inc
    164-10A06SL Coilcraft Inc Variable Inductor, 0.113uH Min, 0.15uH Max, Aluminum-Core, Shielded, 2323, ROHS COMPLIANT Visit Coilcraft Inc
    164-10L Coilcraft Inc Variable Inductor, Air-Core, Unshielded, 2020, Visit Coilcraft Inc
    G832MB010641022HR Amphenol Communications Solutions 0.80mm Board-to-Board 85Ω Connector, Pitch 0.8mm, Height 3.7 mm, 64 Positions, Dual Row, BTB Vertical Receptacle SMT, Gold Flash Black. Visit Amphenol Communications Solutions

    SAMSUNG 6410 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S3C6410

    Abstract: S3C6430 samsung S3C6410 S3C6400 Samsung S3C6410 ARM Samsung MCP ARM 1176 1176JZF-S AC97 Samsung S ARM
    Text: Samsung S3C 6410 A R M 1176-b ased M o b ile A p p lic a tio n Processor Product Brief From smartphones to personal navigation devices, the Samsung ARM 1176based S3C6410 Mobile Application Processor supports the requirements of a broad array of applications. The S3C6410 is both pin and software compatible


    OCR Scan     		S3C6410 1176-based S3C6400 S3C6430 S3C640G samsung S3C6410 Samsung S3C6410 ARM Samsung MCP ARM 1176 1176JZF-S AC97 Samsung S ARM PDF

    S3c6410

    Abstract: Samsung S3C6410 ARM samsung S3C6410 S3C6430 S3C64 s3c6400 samsung s3c6400 s3c*6410 S3C641 S3C643
    Text: Samsung S3C 6410 A R M 1176-b ased M o b ile A p p lic a tio n Processor Product Brief From smartphones to personal navigation devices, the Samsung ARM 1176based S3C6410 Mobile Application Processor supports the requirements of a broad array of applications. The S3C6410 is both pin and software com patible


    OCR Scan     		S3C6410 1176-based S3C6410 S3C6400 S3C6430 S3C640G Samsung S3C6410 ARM samsung S3C6410 S3C64 samsung s3c6400 s3c*6410 S3C641 S3C643 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • T 'ib M m E D C IlTfafel 41T ■ CMOS SRAM KM641005 256K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)


    OCR Scan     		KM641005 KM641005P/J-20: 150mA KM641005P/J-25: 130mA KM641005P/J-35: 110mA KM641005P: 32-pin 400mil) PDF

    KM641003J-15

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • T'ïbMlMS D a i 7 h S 5 TSS ■ ISJ16K PRELIMINARY CMOS SRAM KM641003 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL)


    OCR Scan     		KM641003 KM641003J-15: 170mA KM641003J-17: 160mA KM641003J-20: 150mA KM641003J: 32-Pin KM641003 KM641003J-15 PDF

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS VIDEO RAM ÍM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port A rchitecture 64K x 4 bits R AM port The Samsung KM424C64 is a CMOS 64K x 4 bit Dual Port DRAM. It consists of a 6 4 K x 4 dynamic random access memory RAM port and 256 x 4 static serial •


    OCR Scan     		M424C64 KM424C64 KM424C64 24-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS VIDEO RAM KM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port Architecture 64K x 4 bits RAM port 256 x 4 bits SAM port • Performance range: The Samsung KM424C64 is a CMOS 64K x 4 bit Dual Port DRAM. It c o n s is ts o f a 6 4 K x 4 dynam ic random


    OCR Scan     		KM424C64 KM424C64 24-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001 25 6K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2m A (max.) Operating KM641001P/J-20: 150m A (max) K M 641001P/J-25: 130m A (max)


    OCR Scan     		KM641001 KM641001P/J-20: 641001P/J-25: KM641001P/J-35: KM641001P: 28-pin 641001J: piM641001 PDF

    M641005

    Abstract: No abstract text available
    Text: KM641005 CMOS SRAM 256K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20 ,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2m A (max.) Operating KM641005P/J-20: 150m A (max) K M641005P/J-25: 130m A (max)


    OCR Scan     		KM641005 KM641005P/J-20: M641005P/J-25: M641005P/J-35: KM641005P: 32-pin 641005J: M641005 PDF

    NEC D2732

    Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
    Text: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256


    Original     		71C256 53C256 81C1000 71C1000 4C1024 81C4256 71C4256 4C4256 71C4400 4C4001 NEC D2732 41C1000 41256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM641003B/BL, KM641003BI/BLI Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark


    OCR Scan     		KM641003B/BL, KM641003BI/BLI 256Kx4 32-SO J-400 32-TSO P2-400F PDF

    Untitled

    Abstract: No abstract text available
    Text: KM641003A, KM641003AI CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    OCR Scan     		KM641003A, KM641003AI 256Kx4 12/15/17/20ns 200/190/180/170mA 150/145/145/140mA 32-SOJ-400 PDF

    KM424C64

    Abstract: KM424C64P
    Text: CMOS VIDEO RAM KM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port Architecture 64K x 4 bits RAM port 256 x 4 bits SAM port • Performance range: -1 0 -1 2 RAM access tim e t^Ac 100ns 120ns RAM access tim e (Icac) 25ns 30ns


    OCR Scan     		KM424C64 100ns 180ns 120ns 220ns KM424C64 24-PIN KM424C64P PDF

    Untitled

    Abstract: No abstract text available
    Text: KM641003B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.


    OCR Scan     		KM641003B 256Kx4 8/10/12nsafter 32-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS VIDEO RAM KM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port Architecture 64K x 4 bits RAM port 256 x 4 bits SAM port • Performance range: -1 0 item RAM access tim e tRAc -1 2 120ns 100ns 25ns 30ns 180ns 220ns RAM Page mode cycle (tPC)


    OCR Scan     		KM424C64 120ns 100ns 180ns 220ns KM424C64 24-PIN PDF

    MSM 6290

    Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+


    Original     		2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 27S07AC 7C190-25C MSM 6290 msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150 PDF

    EPM5128LC

    Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C


    Original     		5962-8753903LX 5962-8863701LX 5962-8867003LX 5962-8867809RX 5962-8867809XX 5962-8867810RX 5962-8867811RX 5962-8867812RX 5962-8871309RX 5962-8871310RX EPM5128LC EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 PDF

    ATPA

    Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C


    Original     		CY2147-35C CY7C147-35C CY7C147-45C CY91L22-35C CY7C122-35C CY2147-45C CY7C148-35C CY7C148-25C+ ATPA 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c PDF

    27HC642

    Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+


    Original     		2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 27S07AC 7C190-25C 27HC642 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S PDF

    EPM5128LC

    Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C


    Original     		CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY7C148-35C CY7C168A-45M CY7C168A-35M+ EPM5128LC IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309 PDF

    SG1027RD351293-HA

    Abstract: SG1027RD351293 SG1027RD351293-SB
    Text: SG1027RD351293UU August 17, 2010 Ordering Information Part Numbers Description Device Vendor SG1027RD351293HA 1Gx72 8GB , DDR3, 240-pin Registered DIMM with Heat- Hynix, Rev. A spreader, Parity, ECC, 512Mx4 Based, PC3-10600, DDR3- H5TQ2G43AFR-H9C 1333-999, 30.00mm, Green Module (RoHS Compliant).


    Original     		SG1027RD351293UU SG1027RD351293HA 1Gx72 240-pin 512Mx4 PC3-10600, H5TQ2G43AFR-H9C SG1027RD351293HB SG1027RD351293-HA SG1027RD351293 SG1027RD351293-SB PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM KM641003C Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating) Revision History Rev. No. History Draft Data Rev. 0.0 Initial Draft Aug. 5. 1998 Remark Prelim inary The attached data sheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the


    OCR Scan     		KM641003C 256Kx4 32-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001A Document Title 256Kx 4 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0


    OCR Scan     		KM641001A 256Kx 15/17/20ns 190/180/170m 12/12/13ns 8/9/10ns PDF

    Untitled

    Abstract: No abstract text available
    Text: KM641003A CMOS SRAM Document Title 256Kx4 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Apr. 22th, 1995


    OCR Scan     		KM641003A 256Kx4 12/15/17/20ns 200/190/180/170m 150/145/145/140m 32-SOJ-400 PDF