Untitled
Abstract: No abstract text available
Text: Target Information FLASH MEMORY K8P5615UQA 256Mb A-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8P5615UQA
256Mb
500000h-51FFFFh
4E0000h-4FFFFFh
4C0000h-4DFFFFh
4A0000h-4BFFFFh
480000h-49FFFFh
460000h-47FFFFh
440000h-45FFFFh
420000h-43FFFFh
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K8P5516
Abstract: K8P5516UZB K8P5516UZB-P BA138 diode ba148 BA156 samsung nor flash 0004H 56TSOP serial flash 256Mb fast erase
Text: Rev. 1.3, May. 2010 K8P5516UZB 256Mb B-die NOR FLASH 56TSOP, 64FBGA, Page Mode 2.7V ~ 3.6V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K8P5516UZB
256Mb
56TSOP,
64FBGA,
K8P5516UZB-P
64-Ball
60Solder
K8P5516
K8P5516UZB
BA138 diode
ba148
BA156
samsung nor flash
0004H
56TSOP
serial flash 256Mb fast erase
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samsung electronics ba41
Abstract: BA175
Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8C56
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
samsung electronics ba41
BA175
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samsung ba92
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K8F56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8F56
256Mb
co1A0000h-1AFFFFh
190000h-19FFFFh
180000h-18FFFFh
170000h-17FFFFh
160000h-16FFFFh
150000h-15FFFFh
140000h-14FFFFh
130000h-13FFFFh
samsung ba92
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Untitled
Abstract: No abstract text available
Text: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR
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K8C54
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
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BA95
Abstract: 8A0000
Text: K8C56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR
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K8C56
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
BA95
8A0000
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BA188
Abstract: BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213
Text: Rev. 1.0, Nov. 2010 K8S5615ETC 256Mb C-die NOR Flash 44FBGA, Muxed Burst, Multi Bank SLC 16M x16, 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K8S5615ETC
256Mb
44FBGA,
no180000h-018FFFFh
0170000h-017FFFFh
0160000h-016FFFFh
0150000h-015FFFFh
0140000h-014FFFFh
0130000h-013FFFFh
0120000h-012FFFFh
BA188
BA255
BA242
BA138
BA234
BA205
BA238
BA251
BA188 co
BA213
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K8P5615UQA
Abstract: K8p5615 ba15128 samsung nor flash BA127 Diode BA132 BA133 Samsung MCP 8a000 128KW
Text: K8P5615UQA NOR FLASH MEMORY 256Mb A-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8P5615UQA
256Mb
56-PIN
50TYP
K8P5615UQA
K8p5615
ba15128
samsung nor flash
BA127 Diode
BA132
BA133
Samsung MCP
8a000
128KW
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BA239
Abstract: No abstract text available
Text: Rev. 1.0, Jun. 2010 K8P5616UZB 256Mb B-die Page NOR FLASH 256M Bit 16M x16, 32M x8 , Page Mode datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K8P5616UZB
256Mb
54TSOP
50TYP
64FBGA
60Solder
BA239
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Untitled
Abstract: No abstract text available
Text: K8C56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8C56
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
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BA251
Abstract: 16N10
Text: K8F56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8F56
256Mb
1A0000h-1AFFFFh
190000h-19FFFFh
180000h-18FFFFh
170000h-17FFFFh
160000h-16FFFFh
150000h-15FFFFh
140000h-14FFFFh
130000h-13FFFFh
BA251
16N10
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Untitled
Abstract: No abstract text available
Text: K8C56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8C56
256Mb
couldr13
A0-A23
000000FH
000001FH
000002FH
0000000H
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k8a55
Abstract: BA251 samsung nor flash BA253 BA217 BA155 ba198
Text: Rev. 1.0, Nov. 2010 K8A56 57 ET(B)(Z)C 256Mb C-die NOR FLASH 16M x16, Synch Burst Multi Bank SLC NOR Flash datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K8A56
256Mb
00E0000h-00EFFFFh
00D0000h-00DFFFFh
00C0000h-00CFFFFh
00B0000h-00BFFFFh
00A0000h-00AFFFFh
0090000h-009FFFFh
0080000h-008FFFFh
0070000h-007FFFFh
k8a55
BA251
samsung nor flash
BA253
BA217
BA155
ba198
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Untitled
Abstract: No abstract text available
Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8F56
256Mb
070000h-07FFFFh
060000h-06FFFFh
050000h-05FFFFh
040000h-04FFFFh
030000h-03FFFFh
020000h-02FFFFh
010000h-01FFFFh
00C000h-00FFFFh
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JESD21-C
Abstract: JESD21-C sdr sdram MT48LC4M16A2-75 128M NAND Flash Memory 8MB SDRAM NAND FLASH 64MB SPRU733 C6000 K4S641632H-TC LH28F800BJE-PTTL90
Text: TMS320C672x DSP External Memory Interface EMIF User's Guide Literature Number: SPRU711C February 2005 – Revised April 2007 2 SPRU711C – February 2005 – Revised April 2007 Submit Documentation Feedback Contents Preface . 7
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TMS320C672x
SPRU711C
JESD21-C
JESD21-C sdr sdram
MT48LC4M16A2-75
128M NAND Flash Memory
8MB SDRAM
NAND FLASH 64MB
SPRU733
C6000
K4S641632H-TC
LH28F800BJE-PTTL90
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ba508
Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary
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K5L5628JT
115-Ball
80x13
ba508
BA311
BA340
BA516
BA512
BA516 diode
BA339
BA379
BA295
ba473
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r9824
Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Text: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16
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1/10W
XW9902
XC9901
50R28
U9500
XW9903
25MIL
10MIL
R9915
r9824
R9825
HT 1200-4 smd
L9707
HT 1200-4
r9810
L9708
U5400
r2561
C3523
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R9810
Abstract: HT 1200-4 smd r9824 HT 1200-4 c6011 L9707 L5800 c9611 C3150 ic c2335
Text: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 B 1 2 3 4 6 7 8 9 10 11 13* 14 16 17 18 21* 22
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1/10W
XW9902
XC9901
50R28
U9500
XW9903
25MIL
10MIL
R9915
R9810
HT 1200-4 smd
r9824
HT 1200-4
c6011
L9707
L5800
c9611
C3150
ic c2335
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KM428C257
Abstract: bt 0240 adapter dell circuit diagram of motherboard xps YMF27 BtV2115 024c vcr Dell Dimension yamaha opl2 ymf 282 compaq 486 motherboard diagram
Text: Advance Information Bt This document contains information on a product under development. The parametric information contains target parameters that are subject to change. BtV2115 MediaStream Controller Applications Related Products Distinguishing Features
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BtV2115
BtV2487
BtV2811A
BtV2300
CLK17
CLK25
BtV2115
KM428C257
bt 0240 adapter
dell circuit diagram of motherboard xps
YMF27
024c vcr
Dell Dimension
yamaha opl2
ymf 282
compaq 486 motherboard diagram
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BA512
Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh
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K8S5615ET
22F8h
22FEh
54MHz
66MHz
270sec
240sec
256Byte
00003FH
00007FH
BA512
ba469
BA516
BA508
BA323
BA340
BA476
BA507
BA312
BA379
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BA339
Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA339
BA516
BA501
BA379
BA481
ba473
BA450
BA508
ba204
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Untitled
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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K8A5615ET
54MHz
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
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BA379
Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA379
BA377
BA339
BA438
BA429
BA416
ba-302
BA512
BA308
ba324
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BA425
Abstract: BA512 BA507 BA379 BA324 BA377 BA497 BA339 BA413 ba418
Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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K8A5615ET
54MHz
22ECH
22FCH
22EDH
22FDH
K8A56156ET
70ns---
BA425
BA512
BA507
BA379
BA324
BA377
BA497
BA339
BA413
ba418
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