tda 9592
Abstract: TDA 2310 verilog code for Modified Booth algorithm tda 7830 TDA 8344 sl 7221 KGL80 AO33 FD2S
Text: D • A • T • A • B • O • O • K KGL80 0.5µm 3.3V Gate Array Cell Library April 1997 V SAMSUNG SAMSUNG ASIC KGL80 0.5µm 3.3V Gate Array Cell Library Data Book 1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior
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KGL80
KGL80pads.
tda 9592
TDA 2310
verilog code for Modified Booth algorithm
tda 7830
TDA 8344
sl 7221
KGL80
AO33
FD2S
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TDA 7378
Abstract: TDA 7822 block diagram baugh-wooley multiplier tda 12062 equivalent for tda 4858 ic free transistor equivalent book STD-80 4856 a 14 PIN DIP W908 LSI CMOS Technology
Text: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book 1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior
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STD80/STDM80
notice10.
TDA 7378
TDA 7822
block diagram baugh-wooley multiplier
tda 12062
equivalent for tda 4858 ic
free transistor equivalent book
STD-80
4856 a
14 PIN DIP W908
LSI CMOS Technology
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3,6v sl-386
Abstract: transistor SL-100 tda 9592 FD6S ao21 KG80 KGM80 equivalent transistor S 2000N CL 473 kt 501
Text: D • A • T • A • B • O • O • K KG80/KGM80 0.5µm 5V/3.3V Gate Array Cell Library April 1997 V SAMSUNG SAMSUNG ASIC KG80/KGM80 0.5µm 5V/3.3V Gate Array Cell Library Data Book 1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior
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KG80/KGM80
3,6v sl-386
transistor SL-100
tda 9592
FD6S
ao21
KG80
KGM80
equivalent transistor S 2000N
CL 473
kt 501
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FD2S
Abstract: ix 3368 AO222 chapter 4 AO333 STD80 STDM80 jtag samsung FD6S samsung 649
Text: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book 1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior
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STD80/STDM80
P1149
FD2S
ix 3368
AO222
chapter 4
AO333
STD80
STDM80
jtag samsung
FD6S
samsung 649
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samsung rfs
Abstract: cable data samsung g 600 mm62.5/125 aramid rod NZDSF
Text: Samsung Electronics Fiberoptics products Indoor/Outdoor Cable Uni-tube Design SAMSUNG Indoor/Outdoor Uni-tube Design Cables SCIOU not only offer all the mechanical and environmental characteristics of outside plant cables, but also satisfy all the requirements for use in inside plant applications. Its
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MM50/125
1130E,
1-877-ssoptic/1-877-776-7842
samsung rfs
cable data samsung g 600
mm62.5/125
aramid rod
NZDSF
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samsung LED TV
Abstract: samsung lcd monitor television sony LCD display SAMSUNG MONITOR LCD 17 SAMSUNG CRT TV samsung CRT SAMSUNG monitor 105M sony 19" lcd monitor sony tv lcd 40
Text: SAMSUNG AN A L Y S T DA Y ÎW B BBS W3TiíLee, President Business SAM S Ufi G IN A L Y Î1 IV1VÍ Samsung LCD History Industry Outlook Samsung Strategy W in d o w fo fa SAM SUNG AN U .V ÏÏD A V m u í LCD Everywhere S«AM SUNGvjimv, \Lvsim LCD Everywhere
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Untitled
Abstract: No abstract text available
Text: KMM5321204AW ELECTRONICS DRAM Module KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIM M , 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321204AW consists of two CMOS
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KMM5321204AW
KMM5321204AW/AWG
1Mx32
KMM5321204AW
1Mx16bit
42-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E T> WM T T b m M E KMM5361OOOBV/BVG 0015122 GTT • SMGK DRAM MODULES 1Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM5361000BV is a 1M bitsx36 Dynamic RA M high density memory module. The Samsung
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KMM5361OOOBV/BVG
1Mx36
KMM5361000BV
bitsx36
20-pin
72-pin
KMM5361000BV-7
130ns
5361OOOBV-8
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RA5B
Abstract: No abstract text available
Text: DRAM MODULE KMM332V803AS-L KMM332V803AS-L Fast Page Mode 8M x32 Based on 8Mx8, 4K Refresh, 3.3V, Low power/Self-Refresh G ENER AL DESCRIPTION FEATURES The Samsung KMM332V803A is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung KMM332V803A consists of four CMOS
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KMM332V803AS-L
KMM332V803AS-L
KMM332V803A
32-pin
72-pin
KMM332V803AS-L6/L7
cycles/128ms
60/70ns)
RA5B
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S/KMM5322200BW/BWG-6
Abstract: M53222
Text: K MM5 3 2 2 2 0 0 B W DRAM Modul e ELECTRONICS KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KM M5322200BW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200BW consists of four CMOS
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KMM5322200BW/BWG
2Mx32
1Mx16
M5322200BW
KMM5322200BW
42-pin
72-pin
S/KMM5322200BW/BWG-6
M53222
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b? E KM418C256A/AL/ALL D • 7^4142 GGISÖT? 3b l « S r i G K CMOS DRAM 256Kx 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256A/AUALL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access
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KM418C256A/AL/ALL
256Kx
KM418C256A/AUALL
110ns
KM418C256A/AL/ALL-7
130ns
KM418C256A/AL/ALL-8
150ns
KM418C256A/AUALL-6
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KM41C1000
Abstract: KMM591000
Text: SAMSUNG K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ - • - 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod ules. The ninth bit is generally used for parity and
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KMM491000
KMM591000
KM41C1000
20-pin
R0286
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS b7E D INC • 7 T b 4 1 4 5 D D l b 2D 5 07T KM44C4100L CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4100L is a CMOS high speed 4,194,304 x 4 Dynamic Random Access Memory. Its de
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KM44C4100L
KM44C4100L
110ns
KM44C4100L-7
130ns
KM44C4100L-8
150ns
KM44C4100L-6
47/iF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC MSE ]> 7 ^ 4 1 4 2 0Q10125 • "' KM44C258B 4 MSMGK CMOS DRAM - ‘1 ' T % ¿/ 0 ' 2 S .1 5 2 5 6 K X 4 Bit C M O S Dynamic R AM with Static Column M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C258B is a CMOS high speed
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0Q10125
KM44C258B
KM44C258B
KM44C258B-
130ns
150ns
KM44C258B-10
100ns
180ns
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC* MMBT4126 14E D | 7^4142 0Q072tfl Q | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Cotlector-Emitter Voltage Emitter-Base Voltage
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MMBT4126
0Q072tfl
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DP133
Abstract: T-CON samsung LCD TV 1ebh KS57C3016 samsung lcd monitor circuit diagram samsung lcd tv block diagrams
Text: KS57C3016 4-BIT CMOS Microcontroller Product Specification OVERVIEW The KS57C3016 single-chip CMOS microcontroller is designed lor very high performance using Samsung's newest 4-tnt development approach, SAM4 Samsung Arrangeable Microcontrollers . With an up-to-16-digil LCD
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KS57C3016
up-to-16-digit
100-pin
100-TQFP-U20A
10MAX|
60MAX
120-OFP-U20
DP133
T-CON samsung LCD TV
1ebh
samsung lcd monitor circuit diagram
samsung lcd tv block diagrams
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMI CONDUCTOR INC MPSH17 IME O | 7*11,4142 0007302 *1 | NPN EPITAXIAL SILICON TRANSISTOR CATV TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (T ,= 2 5 °C )
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MPSH17
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PN2222A EQUIVALENT
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MPS2222A 14E D 0 0073 06 | 8 NPN EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vceo=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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MPS2222A
T-29-21
625mW
MPS2222
PN2222A EQUIVALENT
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transistor sot-23 marking L8
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC ! MMBT4123 | 7 1 i.U « e BOOM M . s j NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBT4123
OT-23
transistor sot-23 marking L8
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MPS6522 D | 7*^4145 0007327 1 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: P c max =625mW A BSO LU TE MAXIMUM RATINGS (Ta=25°C) Characteristic
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MPS6522
T-29-21
625mW
2N3906
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KSR1109
Abstract: KSR2109 samsung FJ Z2400
Text: -SAMSUNG SEMICONOUCTOR_ I N c T -3S-lt:LME D | Q007Q5S S | KSR1109 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=4.7Kfl) • Complement to KSR2109
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Q007G5S
KSR1109
KSR2109
OT-23
41000705b
KSR2109
samsung FJ
Z2400
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • TTbHmS KM93C57V/KM93C67V DDlbfiH? 723 ■ PRELIMINARY CMOS EEPROM 2 K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Enhanced extended operating voltage: 3 .0 V ^ 5 .5 V • Low power consumption
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KM93C57V/KM93C67V
KM93C57
KM93C57V/67V
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SE MI CONDUCT OR INC MMBR5179 14E D 0 007255 7 [ X’ ff-f? NPN EPITAXIAL SILICON TRANSISTOR RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE M AXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage [ Collector-Emitter Voltage ! Emitter-Base Voltage
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MMBR5179
OT-23
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Untitled
Abstract: No abstract text available
Text: SAMSUN KS 57 C 3016 4-BIT CMOS Microcontroller Product Specification OVERVIEW The KS57C3016 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit development approach, SAM4 Samsung Arrangeable Microcontrollers . With an up-to-16-digit LCD
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KS57C3016
up-to-16-digit
100-pin
100-TQFP-1420A
003b2fl3
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