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    SAMSUNG HV CAPACITOR Search Results

    SAMSUNG HV CAPACITOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    SAMSUNG HV CAPACITOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC Z5U 1KV

    Abstract: kyocera hc1 hr 8445 B37941K5103K062 GRM21BR71H103KA01L Fenghua safety capacitors 0805X7R103KT2AT Fenghua 2A104K a88 w02
    Text: Manufacturer’s Cross Reference and Multilayer Ceramic Chip Capacitor Part Numbering P.O. Box 5928 Greenville, SC 29606 Phone 864 963-6300 Fax (864) 963-6652 www.kemet.com F3068H 10/05 KEMET Includes Commercial, High voltage, Open mode, COTS, Medical, and Military


    Original     		PDF F3068H GR900 MIL-PRF-55681 CDR01-CDR06 MIL-PRF-55681-Metricowloon BC Z5U 1KV kyocera hc1 hr 8445 B37941K5103K062 GRM21BR71H103KA01L Fenghua safety capacitors 0805X7R103KT2AT Fenghua 2A104K a88 w02

    samsung roadmap

    Abstract: MP6930 MP4050 MP44011 MP6923 HFC0500
    Text: Monolithic Power Systems New Product for ACDC and Lighting Field Date: May 22, 2013 Confidential –Not approved for copy or Distribution The Future of Analog IC Technology ® Agenda: LED Lighting • Product Update of MPS Indoor Lighting – Non-dimming, Non-PFC


    Original     		PDF PAR38 MP4028 MP4034 L6562 MP44011 MP44011 MP44010 samsung roadmap MP6930 MP4050 MP6923 HFC0500

    ka7905

    Abstract: KA7905 samsung
    Text: KA7 9 X X ELECTR ONICS Industrial 3-TERMINAL 1A NEGATIVE VOLTAGE REGULATORS The KA79XX series of three-terminal negative regulators are available in TO-220 package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs internal current limiting,


    OCR Scan     		PDF KA79XX O-220 KA79XX O-220 KA7905 ka7905 KA7905 samsung

    Untitled

    Abstract: No abstract text available
    Text: CMOS VIDEO RAM KM424C256A 256KX4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port S12 x 4 bits SAM port • Performance range: Item RAM RAM RAM RAM SAM SAM RAM SAM RAM • • • • • • • • • • • • access time tRAc


    OCR Scan     		PDF KM424C256A 256KX4 125ns 150ns 100ns 180ns 28-PIN

    samsung p28

    Abstract: No abstract text available
    Text: K S O l 19 Multimedia ELECTRONICS VIDEO ENCODER The KS0119/KS0119Q2 combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either NTSC or PC monitors. There are two data input channels


    OCR Scan     		PDF KS0119/KS0119Q2 KS0119Q2 KS0119. S0119) GD33521 D033522 samsung p28

    Untitled

    Abstract: No abstract text available
    Text: KSOl19Q2 Multimedia ELECTRO NICS VIDEO ENCODER The KS0119/KS0119Q2 combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either NTSC or PC monitors. There are two data input channels


    OCR Scan     		PDF KSOl19Q2 KS0119/KS0119Q2 KS0119Q2 KS0119. RS-170A S0119Q 00335bb

    KMM584000A

    Abstract: km41c4000aj
    Text: KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KMM584000A consist of eight KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM584000A KMM584000A KM41C4000AJ 20-pin 30-pin KMM584000A-

    KMM581000N8

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC M2E D H KMM581000N 7=^4142 0Q10434 b DRAM MODULES 1M x8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000N Is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000N c o n s is t o f tw o 4M b it DRAMs


    OCR Scan     		PDF KMM581000N 0Q10434 KMM581000N KM44C1000J-1M 20-pin 30-pin KMM581000N-8 150ns KMM581000N-10 KMM581000N8

    Untitled

    Abstract: No abstract text available
    Text: KA7 9LXXAZ ELECTRONICS Industrial 3-TERM INAL 0.1A NEGATIVE VOLTAGE REGULATORS These regulators employ internal current limiting and thermal - shutdown, making them essentially in­ destructible. FEATURES • Output current up to 100mA • No external components


    OCR Scan     		PDF 100mA KA79LXXAZ QQ32665 O-92L

    41C1000

    Abstract: KMM591000AN 41C1000BJ
    Text: MM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and


    OCR Scan     		PDF MM591000AN 591000AN KMM591 44C1000AJ 20-pin 41C1000BJ 30-pin 22jiF KMM591OOOAN 41C1000 KMM591000AN

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC 11 Ï E 1 71^4142 ODDBbb11! KMM411024/KMM511024 KMM411025/KMM511025 *i 1~~ SAM SUNG Semiconductor Preliminary IMeg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION The Samsung KM M 4U024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM


    OCR Scan     		PDF KMM411024/KMM511024 KMM411025/KMM511025 4U024, KMM411025, KMM511024 KMM511025, KM41256/7 18-pin KMM411024 KMM411025

    KM41C257-10

    Abstract: No abstract text available
    Text: KM41C257 CMOS DRAM 256K x 1 Bit C M O S Dynamic R AM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C257 is a CMOS high speed 262,144 bit x 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C257 KM41C257 KM41C257-7 KM41C257-8 KM41C257-10 100ns 130ns 150ns 180ns KM41C257-10

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 GDlSblS 755 KM41C4001B CMOS DRAM 4M x 1Bit C M O S Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001B is a CMOS high speed 4,194,304x1 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM41C4001B KM41C4001B 304x1 110ns KM41C4001B-7 130ns KM41C4001B-8 KM41C4001B-6 150ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KA7 8M XX ELECTRONICS Industrial 3-TERMINAL 0.5A POSITIVE VOLTAGE REGULATORS The KA78MXXC/I series of three-terminal positive regulators are avail­ able in the TO-220 package with several fixed output voltages making it useful in a wide range of applications.


    OCR Scan     		PDF KA78MXXC/I O-220 KA78MXX O-220 1251C KA78MXXI -T-a33nF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC tiHE D m 7U4142 256Kx4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: -8 Item • • • • • • • • • • • • -10 80ns 1 0 0 ns access time t R A c


    OCR Scan     		PDF 7U4142 256Kx4 150ns 180ns 28-PIN KM424C256

    Untitled

    Abstract: No abstract text available
    Text: KA79MXX I n d u st r ia l 3-TERMINAL 0.5A NEGATIVE VOLTAGE REGULATORS The KA79MXX series of 3-Term inal medium current negative voltage regulators are monolithic integrated circuits designed as fixed voltage regulators. These regulators employ internal current limiting, thermal


    OCR Scan     		PDF KA79MXX KA79MXX KA79M KA79M12: KA79M15

    594000A

    Abstract: No abstract text available
    Text: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 594000A consist of nine KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM594000A 94000A 41C4000AJ 20-pin 30-pin 94000A- 594000A

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E » • 7 ^ 4 1 4 2 QG1DSQ7 7 E3SMGK KMM536512B DRAM MODULES i 5 1 2 K X 3 6 DRAM S IM M Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KM M 536512B- 7 • • • • • • • tR A C tC A C tR C 130ns 70ns


    OCR Scan     		PDF KMM536512B 536512B- 130ns KMM53651 150ns 2B-10 536512B 20-pin

    D1377

    Abstract: TCA 965 BP KM424C256A
    Text: b4E D SAMSUNG ELEC TRONICS INC • CMOS VIDEO RAM KM424C256A GENERAL DESCRIPTION 256K X 4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: Item -6 RAM access time tmc RAM access time (tCAc)


    OCR Scan     		PDF 0G13771 KM424C256A KM424C256A 256Kx4 28-PIN D1377 TCA 965 BP

    KMM536256

    Abstract: No abstract text available
    Text: KMM536256B DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 536256B is a 2 6 2 ,1 4 4 bit X 36 Dynamic RAM high density memory module. The Sam­ sung KM M 536256B consist ot eight CMOS 2 5 6 K X 4


    OCR Scan     		PDF KMM536256B 536256B 20-pin 18-pin 72-pin 536256B- 130ns KMM536256

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KM M532512CV/CVG 512Kx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532512CV is a512K bit x 32 Dynamic RAM high density memory module. The Samsung KMM532512CV consist of sixteen CMOS 2 5 6 K x4 bit


    OCR Scan     		PDF M532512CV/CVG 512Kx32 KMM532512CV-6 KMM532512CV-7 KMM532512CV-8 110ns 130ns 150ns KMM532512CV a512K

    irp 945

    Abstract: KM41C4000AJ 4Mx9 DRAM 30-pin SIMM connector SAMSUNG 30 PIN irp 540 30pin samsung KMM594000A KMM594000A-10 KMM594000A-7 KMM594000A-8
    Text: SA M S UN G E L E C T R O N I C S INC b4E D • 7 = ^ 4 1 4 2 0 0 1 4 5 1 1 S31 I SMGK KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tCAC tRC 70ns 20ns 130ns KMM594000A- 8 80ns 20ns 150ns


    OCR Scan     		PDF KMM594000A D014Sn KMM594000A- 130ns 150ns KMM594000A-10 100ns 180ns cycles/16ms irp 945 KM41C4000AJ 4Mx9 DRAM 30-pin SIMM connector SAMSUNG 30 PIN irp 540 30pin samsung KMM594000A KMM594000A-7 KMM594000A-8

    km44c1000aj

    Abstract: 581000A
    Text: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581OOOAN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM44C1000AJ - 1MX4 in 20-pin SOJ package


    OCR Scan     		PDF KMM581000AN 130ns 150ns 180ns KMM581 30-pin KMM581OOOAN KM44C1000AJ 20-pin 581000A

    KM41C1000

    Abstract: KMM591000
    Text: SAMSUNG K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ - • - 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and


    OCR Scan     		PDF KMM491000 KMM591000 KM41C1000 20-pin R0286