K9GBG08
Abstract: S3C2443 NAND FLASH SAMSUNG K9GBG08X0M Samsung 32Gb Nand flash K9GBG "NAND Flash" s3c2443 datasheet Samsung Flash Datasheet samsung NAND
Text: SEC-MFAEG-NAND-AN Power up & Reset command for NAND K9GBG08X0M Application Note Version 0.2, Nov-2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung
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K9GBG08X0M)
Nov-2009
S3C2443
K9GBG08
NAND FLASH SAMSUNG
K9GBG08X0M
Samsung 32Gb Nand flash
K9GBG
"NAND Flash"
s3c2443 datasheet
Samsung Flash Datasheet
samsung NAND
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K9F1G08
Abstract: K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y
Text: K9F1G08Q0A K9F1G08D0A K9F1G08U0A Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 24th. 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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K9F1G08Q0A
K9F1G08D0A
K9F1G08U0A
K9F1G08Q0A-Y
K9F1G08
K9F1G08U0A
K9F1G08X0A
K9F1G08Q0A
ADD12
K9F1G08D0A-Y
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400F
Abstract: KM29N32000 KM29W32000TS
Text: KM29W32000TS FLASH MEMORY Document Title 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W32000TS
KM29V32000
KM29N32000
KM29W32000
400F
KM29N32000
KM29W32000TS
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MMCQE28GFMUP-MVA
Abstract: MMCRE64GFMPP-MVA S3C49RBXZZ mmcre64 ic 7313 128Gb Nand flash MLC Samsung SSD controller LSI bad block management in mlc nand Samsung 64Gb Nand flash mmcre64gfmpp
Text: NAND based Solid State Drive Slim uSATA MLC NSSD NAND based Solid State Drive Datasheet Rev. 1.0 June 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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54x78
S3C49RBXZZ
MMCRE64GFMPP-MVA
MMCQE28GFMUP-MVA
128GB
mmcre64
ic 7313
128Gb Nand flash MLC Samsung
SSD controller LSI
bad block management in mlc nand
Samsung 64Gb Nand flash
mmcre64gfmpp
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parallel port interface
Abstract: "parallel port interface" SmartMedia Logical Format samsung display port smartmedia ecc
Text: BEFORE USING SOURCE CODE PROVIDED BY SAMSUNG Samsung provides two kinds of source codes and PPI parallel port interface board to help your system design with NAND/SmartMedia. The following describes major features of two source codes to choose a right one along with some instructions for installing the
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seccom21
smfs221
parallel port interface
"parallel port interface"
SmartMedia Logical Format
samsung display port
smartmedia ecc
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samsung pcb 8Gb nand flash
Abstract: S4LD166X01 ssd 545 dc drive
Text: NAND Flash-based Solid State Disk NSSD NAND Flash-based Solid State Disk Standard Type Product Data sheet Version 1.2 Nov 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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S4LD166X01
MC4GE04G8APQ-0XA
MC8DE08G8APQ-0XA
MCAQE16G8APQ-0XA
MCAQE32G8APP-0XA
MC4GE04G5APP-0XA
MC8DE08G5APP-0XA
MC8DE16G5APP-0XA
MCAQE32G5APP-0XA
samsung pcb 8Gb nand flash
ssd 545 dc drive
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"nand flash memory"
Abstract: KM29N040 KM29N040IT KM29N040T
Text: FLASH MEMORY KM29N040T, KM29N040IT Document Title 512K x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet 1997. April 10th 1997 1.0 Data Sheet 1998. April 10th 1998 1.1 Data Sheet 1998. July 14th 1998 Remark Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to cha nge the
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KM29N040T,
KM29N040IT
"nand flash memory"
KM29N040
KM29N040IT
KM29N040T
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S3C49F9X
Abstract: 432t
Text: S3C49F9X SOLID DISK CONTROLLER INRODUCTION S3C49F9X User’s Manual Compact Flash Controller Samsung Electronics Co.,LTD Semiconductor LSI System Division 1 S3C49F9X SOLID DISK CONTROLLER 1 INRODUCTION PRODUCT OVERVIEW Samsung's S3C49F9X is NAND flash memory controller which can control flash memories as solid state
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S3C49F9X
S3C49F9X
512Mbit
35-um
100-TQFP
100-pin
432t
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130001 power transistor
Abstract: Real Time "ECC" K9F2808U0B A10A11
Text: Preliminary FLASH MEMORY K9F2808U0B-BCB0 Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark March 1’st 2001 Preliminary Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9F2808U0B-BCB0
48-Ball
08MAX
130001 power transistor
Real Time "ECC"
K9F2808U0B
A10A11
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k9f1g08u0d
Abstract: K9F1G08U0D-SCB0 K9F1G08u0c k9f1g08u0d-sib0 K9F1G08U0D-HCB0 K9F1G08U0DSCB0 k9g1g08 K9F1G08U0D-SIB SAMSUNG K9F1G08U0C NAND Flash Qualification Report
Text: Rev. 0.1, May. 2010 K9F1G08U0D Advance 1Gb NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K9F1G08U0D
K9F1G08U0C
200us
700us
250us
750us
k9f1g08u0d
K9F1G08U0D-SCB0
K9F1G08u0c
k9f1g08u0d-sib0
K9F1G08U0D-HCB0
K9F1G08U0DSCB0
k9g1g08
K9F1G08U0D-SIB
SAMSUNG K9F1G08U0C NAND Flash Qualification Report
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KBY00
Abstract: LPDDR 8Gb 137FBGA KBY00U00VA MCP 256M nand samsung mobile DDR samsung "nand flash" derating SAMSUNG MCP sdram 2g "4bit correction" DQ28D
Text: Rev. 1.0, Jul. 2010 KBY00U00VA-B450 MCP Specification 8Gb DDP 512M x16 NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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KBY00U00VA-B450
A10/AP
KBY00
LPDDR 8Gb
137FBGA
KBY00U00VA
MCP 256M nand samsung mobile DDR
samsung "nand flash" derating
SAMSUNG MCP
sdram 2g
"4bit correction"
DQ28D
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K9F2G08U0C-SCB0
Abstract: K9F2G08U0C samsung k9f2g08U0C K9F2G08U0C-SCB K9G2G08U0C K9F2G08U0C-BCB0 K9F2G08U0B K9F2G08U0C-B K9G2G08U0 K9F2G08U0C-XCB0
Text: Rev. 1.0, Jul. 2010 K9F2G08U0C 2Gb C-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K9F2G08U0C
K9F2G08U0B
200us
700us
K9F2G08U0C
250us
750us
K9F2G08U0C-SCB0
samsung k9f2g08U0C
K9F2G08U0C-SCB
K9G2G08U0C
K9F2G08U0C-BCB0
K9F2G08U0C-B
K9G2G08U0
K9F2G08U0C-XCB0
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s3c2410
Abstract: RISC-Processor s3c2410 Samsung s3c2410 ARM920T memory compiler touch screen samsung NAND FLASH SAMSUNG USB Flash Memory SAMSUNG s3c2410 datasheet S3C2410A
Text: Samsung S3C2410 World's First ARM-Based Processor with NAND Flash Support Design Innovation for Mobile Computing Samsung's S3C2410 16/32-bit RISC microprocessor is designed to provide a cost effective, low power, small die size and high performance microcontroller solution for hand held
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S3C2410
S3C2410
16/32-bit
10-bit
DS-S3C2410AP-01
RISC-Processor s3c2410
Samsung s3c2410
ARM920T
memory compiler
touch screen samsung
NAND FLASH SAMSUNG
USB Flash Memory SAMSUNG
s3c2410 datasheet
S3C2410A
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samsung k9f2g08U0C
Abstract: K9F2G08U0C K9F2G08U0C-SCB0 K9F2G08U0B K9F2G08U0C-SCB K9G2G08U0C SAMSUNG 4gb NAND Flash Qualification Report K9F2G08U0C-S K9F2G08U0C-XCB0 K9F2G08U0C-XIB0
Text: Rev. 0.2, May. 2010 K9F2G08U0C Advance 2Gb C-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K9F2G08U0C
K9F2G08U0B
200us
700us
K9F2G08U0C
250us
750us
samsung k9f2g08U0C
K9F2G08U0C-SCB0
K9F2G08U0C-SCB
K9G2G08U0C
SAMSUNG 4gb NAND Flash Qualification Report
K9F2G08U0C-S
K9F2G08U0C-XCB0
K9F2G08U0C-XIB0
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Untitled
Abstract: No abstract text available
Text: HANBit HFDOM40S3Rxxx 40Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S3Rxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM40S3Rxxx
40Pin
512MB,
HFDOM40S3Rxxx
HFDOM40S3R-xxx
512MByte
DOM40S3R128
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2Gbyte NAND flash
Abstract: No abstract text available
Text: HANBit HFDOM40S6Vxxx 40Pin Flash Disk Module Min.128MB ~ Max.3GB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S6Vxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM40S6Vxxx
40Pin
128MB
HFDOM40S6Vxxx
HFDOM40S3V-xxx
2Gbyte NAND flash
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Untitled
Abstract: No abstract text available
Text: HANBit HFDOM44S3Rxxx 44Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S3Rxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM44S3Rxxx
44Pin
512MB,
HFDOM44S3Rxxx
HFDOM44S3R-xxx
512MByte
DOM44S3R128
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msata connector
Abstract: MMDPE64GEDXP-MVB msata MMCRE32GEDXP-MVB block diagram of msata SSD drive MMBRE 64gb nand flash samsung 809F 40B0h MMBRE16GEDXP-MVB
Text: Rev. 1.0,Jan. 2010 MMDPE64GEDXP-MVB MMCRE32GEDXP-MVB MMBRE16GEDXP-MVB PM800 - mSATA 3.0Gb/s MLC SSD NAND based Solid State Drive datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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MMDPE64GEDXP-MVB
MMCRE32GEDXP-MVB
MMBRE16GEDXP-MVB
PM800
msata connector
MMDPE64GEDXP-MVB
msata
MMCRE32GEDXP-MVB
block diagram of msata SSD drive
MMBRE
64gb nand flash samsung
809F
40B0h
MMBRE16GEDXP-MVB
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MCP 256M nand samsung mobile DDR
Abstract: MCP MEMORY samsung nor nand ddr mcp MCP NAND DDR KA100O015E SAMSUNG MCP KA100O015E-BJTT 137FBGA nand mcp samsung ka nand sdram mcp
Text: Rev. 1.0, Jul. 2010 KA100O015E-BJTT MCP Specification 4Gb 256M x16 NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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KA100O015E-BJTT
A10/AP
MCP 256M nand samsung mobile DDR
MCP MEMORY
samsung nor nand ddr mcp
MCP NAND DDR
KA100O015E
SAMSUNG MCP
KA100O015E-BJTT
137FBGA
nand mcp samsung ka
nand sdram mcp
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samsung roadmap
Abstract: USB Flash Memory SAMSUNG SAMSUNG MCp nand Samsung Nand gb MCP Technology Trend SAMSUNG NAND FLASH NAND flash differences NAND Reliability note MCP NAND, DRAM, NOR Samsung MCP
Text: Selecting the Right FLASH Partner to Turn Technology Advantages into Profits A Position Paper by Samsung Semiconductor, Inc. 2003 Samsung Semiconductor, Inc. SAMSUNG SEMICONDUCTOR, INC. POSITION PAPER Introduction Since FLASH memory was first introduced, the unique ability to have cost effective, nonvolatile memory has spawned a revolution in consumer and industrial products. Cellular
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CG2020-A
samsung roadmap
USB Flash Memory SAMSUNG
SAMSUNG MCp nand
Samsung Nand gb
MCP Technology Trend
SAMSUNG NAND FLASH
NAND flash differences
NAND Reliability note
MCP NAND, DRAM, NOR
Samsung MCP
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K9HCG08U5M
Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs
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120GB
128MB
256MB
128MB
512MB
K9HCG08U5M
K9WBG08U1M
K9LAG08U0M-PCB0
KMAFN0000M
KMBGN0000A
K9MDG08U5M-PCB0
K4M56323PI
MCCOE32GQMPQ-M
K4M56163PI
movinand
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Untitled
Abstract: No abstract text available
Text: KM29W16000AT, KM29W16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. H istory Draft Date Rem ark 0.0 Initial issue. April 10th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
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KM29W16000AT,
KM29W16000AIT
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Samsung "NAND Flash" "ordering information"
Abstract: ICS 3 bad block samsung
Text: MEMORY ICs FUNCTION GUIDE 3. ORDERING INFORMATION 1 2 3 4 KM 29 A BBBBB 5 6 C D SAMSUNG Memory 7 8 E F Bad Block NAND Flash Package Product Temp Density Revision Revision Blank- 1st Gen. A . 2nd Gen.
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16Mbit
32Mbit
Samsung "NAND Flash" "ordering information"
ICS 3
bad block samsung
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Untitled
Abstract: No abstract text available
Text: KM29W32000T, KM29W32000IT FLASH MEMORY Document Title 4M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right
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KM29W32000T,
KM29W32000IT
29V32000
KM29N32000
KM29W32000
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