MARKING GA
Abstract: SPM3218
Text: Ordering number : ENN7266 SPM3218 SANYO Semiconductors DATA SHEET RF SPDT Switch MMIC SPM3218 Single Power Supply Operation Wide Band Switch MMIC Features [SPM3218] 0.8 0.55 0.2 0.15 1 5 2 4 3 Bottom View Top View 0.55 1 Marking 6 2 5 3 4 0.8 1.2 6 0.45 0.05
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ENN7266
SPM3218
SPM3218]
ECSP1208-6
MARKING GA
SPM3218
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marking DA
Abstract: No abstract text available
Text: Ordering number : ENN7646 EC2D01B Shottky Barrier Diode EC2D01B 30V, 70mA Rectifier Applications • Package Dimensions High frequency rectification switching regulators, converters and choppers . unit : mm 1325 [EC2D01B] 0.25 2 0.05 Marking 2 1 1.0 0.4 1.0
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ENN7646
EC2D01B
EC2D01B]
ECSP1006-2T
marking DA
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TA 7503
Abstract: EC2D02B
Text: Ordering number : ENN7503 EC2D02B Shottky Barrier Diode EC2D02B 30V, 100mA Rectifier Applications • Package Dimensions High frequency rectification switching regulators, converters and choppers . unit : mm 1325 [EC2D02B] Features Marking 0.25 2 0.05 2 1
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ENN7503
EC2D02B
100mA
EC2D02B]
100mA,
ECSP1006-2T
TA 7503
EC2D02B
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IC 7107
Abstract: 5252 F 1006 C 5763 transistor PT 4962 marking 5241 CRE 6203 ECSP1006-3 EC3H10B current 5241 10419
Text: Ordering number : ENN7324 EC3H10B NPN Epitaxial Planar Silicon Transistor EC3H10B UHF to S Band Low-Noise Amplifier and OSC Applications Features 1 3 2 0.15 1 1.0 0.05 0.25 Top View 0.05 • [EC3H10B] Bottom View 0.5 0.65 • unit : mm 2183A Marking 2 0.05
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ENN7324
EC3H10B
EC3H10B]
S21e2
ECSP1006-3
IC 7107
5252 F 1006
C 5763 transistor
PT 4962
marking 5241
CRE 6203
ECSP1006-3
EC3H10B
current 5241
10419
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7223 ESVD301 Varactor Diode ESVD301 For X Band VCO Preliminary Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1317 0.50 0.18 0.80 0.50 1 0.35 [ESVD301] 0.05 0.80 1 Marking 1.60 2 Bottom view 1 : Cathode
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ENN7223
ESVD301
ESVD301]
ECSP1608
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ESVD301
Abstract: No abstract text available
Text: Ordering number : ENN7223 ESVD301 Varactor Diode ESVD301 For X Band VCO Preliminary Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1317 0.50 0.18 0.80 0.50 1 0.35 [ESVD301] 0.05 0.80 1 Marking 1.60 2 Bottom view 1 : Cathode
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ENN7223
ESVD301
ESVD301]
ECSP1608
ESVD301
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ESVD301
Abstract: ENN7223A 62003 72602
Text: Ordering number : ENN7223A ESVD301 Varactor Diode ESVD301 For X Band VCO Preliminary Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1317A [ESVD301] Side View 0.55 0.18 2 0.05 0.8 1 0.35 Bottom View 0.5 Top View 0.8 Marking 1.6
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ENN7223A
ESVD301
ESVD301]
ECSP1608-2
ESVD301
ENN7223A
62003
72602
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MARKING GA
Abstract: SPM3218
Text: Ordering number : ENN7266 SPM3218 RF SPDT Switch MMIC SPM3218 Single Power Supply Operation Wide Band Switch MMIC Features [SPM3218] 0.8 0.55 0.2 0.15 1 5 2 4 3 Bottom View Top View 0.55 1 Marking 6 2 5 3 1.2 6 0.45 0.05 0.05 0.15 0.05 0.45 • unit : mm 1318
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ENN7266
SPM3218
SPM3218]
ECSP1208-6
MARKING GA
SPM3218
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Untitled
Abstract: No abstract text available
Text: Ordering number : 0000000 SBFP420B NPN Epitaxial Planar Silicon Transistor SBFP420B UHF to C Band Low-Noise Amplifier Osc. Applications • • [SBFP420B] 0.35 0.2 0.15 0.15 0.05 3 4 0.25 0.4 0.65 • unit : mm 0000 1 2 0.05 1.0 • Low noise : NF=1.1dB typ f=1.8GHz .
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SBFP420B
SBFP420B]
18GHz
25GHz
S21e2
ECSP1006
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Untitled
Abstract: No abstract text available
Text: Ordering number : 0000000 SBFP540B NPN Epitaxial Planar Silicon Transistor SBFP540B UHF to C Band Low-Noise Amplifier Low Phase Noise Osc. Applications • • [SBFP540B] 0.35 0.2 0.15 0.15 0.05 3 4 0.25 0.4 0.65 • unit : mm 0000 1 2 0.05 1.0 • Low noise : NF=0.9dB typ f=1.8GHz .
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SBFP540B
SBFP540B]
20GHz
29GHz
S21e2
ECSP1006
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Untitled
Abstract: No abstract text available
Text: Ordering number : 0000000 SBFP420B NPN Epitaxial Planar Silicon Transistor SBFP420B UHF to C Band Low-Noise Amplifier Osc. Applications Preliminary • • [SBFP420B] 0.35 0.2 0.15 0.15 0.05 3 4 0.25 0.4 0.65 • unit : mm 0000 1 2 0.05 1.0 • Low noise : NF=1.1dB typ f=1.8GHz .
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SBFP420B
SBFP420B]
20GHz
25GHz
S21e2
ECSP1006
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transistor 1.8GHz 18dB
Abstract: No abstract text available
Text: Ordering number : 0000000 SBFP405B NPN Epitaxial Planar Silicon Transistor SBFP405B UHF to C Band Low-Noise Amplifier Osc. Applications • [SBFP405B] 0.35 0.2 0.15 0.15 0.05 3 4 0.25 0.4 0.65 • unit : mm 0000 1 2 0.05 1.0 • Low noise : NF=1.25dB typ f=1.8GHz .
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SBFP405B
SBFP405B]
25GHz
S21e2
ECSP1006
transistor 1.8GHz 18dB
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marking DF
Abstract: ECSP1608-4 N3004 SS1003EJ
Text: SS1003EJ Ordering number : ENN8157 SS1003EJ Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).
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SS1003EJ
ENN8157
500mA,
marking DF
ECSP1608-4
N3004
SS1003EJ
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ECSP1608-4
Abstract: N3004 SS1003EJ
Text: SS1003EJ Ordering number : EN8157A SANYO Semiconductors DATA SHEET SS1003EJ Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).
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SS1003EJ
EN8157A
500mA,
ECSP1608-4
N3004
SS1003EJ
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ECSP1608-4
Abstract: SB1003EJ 7033a
Text: SB1003EJ Ordering number : EN8156B SANYO Semiconductors DATA SHEET SB1003EJ Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low switching noise. Ultraminiature (1608 size) and thin (0.6mm) leadless package.
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SB1003EJ
EN8156B
ECSP1608-4
SB1003EJ
7033a
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ECSP1608-4
Abstract: SB0203EJ marking DA
Text: SB0203EJ Ordering number : ENN8169 SB0203EJ Schottky Barrier Diode 30V, 200mA Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low leakage current and high reliability due to highly reliable planar structure.
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SB0203EJ
ENN8169
200mA
ECSP1608-4
SB0203EJ
marking DA
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ECSP1608-4
Abstract: SS0503EJ
Text: SS0503EJ Ordering number : ENN8172 SS0503EJ Schottky Barrier Diode 30V, 500mA Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=300mA, VF max=0.4V) (IF=500mA, VF max=0.45V).
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SS0503EJ
ENN8172
500mA
300mA,
500mA,
--55td.
ECSP1608-4
SS0503EJ
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ECSP1608-4
Abstract: ENN8170 SB0503EJ
Text: SB0503EJ Ordering number : ENN8170 SB0503EJ Schottky Barrier Diode 30V, 500mA Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low leakage current and high reliability due to highly reliable planar structure.
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SB0503EJ
ENN8170
500mA
ECSP1608-4
ENN8170
SB0503EJ
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Untitled
Abstract: No abstract text available
Text: SB1003EJ Ordering number : ENN8156A SB1003EJ Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low switching noise. Ultraminiature (1608 size) and thin (0.6mm) leadless package.
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SB1003EJ
ENN8156A
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ECSP1608-4
Abstract: SB1003EJ
Text: SB1003EJ Ordering number : ENN8156 SB1003EJ Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low switching noise. Ultraminiature (1608 size) and thin (0.6mm) leadless package.
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SB1003EJ
ENN8156
ECSP1608-4
SB1003EJ
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7295A EC3A03B N-Channel Silicon Junction FET EC3A03B Impedance Converter, Infrared Sensor Applications Preliminary Features unit : mm 2208 [EC3A03B] 0.35 0.2 0.15 0.15 0.05 1 2 0.25 3 0.5 1.0 0.4 0.65 0.25 • Small IGSS. Small Ciss. Ultraminiature package facilitates miniaturization in
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ENN7295A
EC3A03B
EC3A03B]
ECSP1006-3
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7400 chip 112
Abstract: PWP-28 6TPB150M 4TPC150M capacitor 10 uF x 25v 10TPA33M TPS5615EVM-114 TPS5618EVM-113 TPS5625EVM-112 TPS5633EVM-111
Text: TPS56xxEVM111/112/113/114 Assembly File Effective Date: 09/01/99 Current EVM Rev: B TEXAS INSTRUMENTS TPS56xxEVM-111/112/113/114 Assembly File Table of Contents Introduction. 3
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TPS56xxEVM111/112/113/114
TPS56xxEVM-111/112/113/114
7400 chip 112
PWP-28
6TPB150M
4TPC150M
capacitor 10 uF x 25v
10TPA33M
TPS5615EVM-114
TPS5618EVM-113
TPS5625EVM-112
TPS5633EVM-111
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EC2C01C
Abstract: TA-3094
Text: Ordering number : ENN6966 EC2C01C Silicon Diffused-Junction Type EC2C01C VCXO & VHF Band VCO Applications Varactor Diode Features High capacitance ratio. CR C1.0V / C4.0V =5.0typ Ultrasmall-sized package(1008), slim package (0.6mm), leadless package. unit : mm
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ENN6966
EC2C01C
EC2C01C]
ECSP1008-2
EC2C01C
TA-3094
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EC2C01C
Abstract: ECSP1008-2 TA-3094
Text: Ordering number : ENN6966A EC2C01C Silicon Diffused-Junction Type EC2C01C VCXO & VHF Band VCO Applications Varactor Diode Features High capacitance ratio. CR C1.0V / C4.0V =5.0typ Ultrasmall-sized package(1008), slim package (0.6mm), leadless package. unit : mm
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ENN6966A
EC2C01C
EC2C01C]
ECSP1008-2
EC2C01C
ECSP1008-2
TA-3094
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