3 phase ac sinewave phase inverter single ic
Abstract: U5J diode
Text: MG50Q2YS40 Unit in mm HIGH POW ER SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed tf=0.5/is M ax. trr = 0.5//s(Max.) Low Saturation Voltage : v CE(sat) =4.0V(Max.) Enhancement-Mode Includes a Complete Half Bridge in One
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MG50Q2YS40
2-94D1A
3 phase ac sinewave phase inverter single ic
U5J diode
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td62381
Abstract: td62381p
Text: B IP O L A R DIGITAL IN T EG R A T E D C IR C U IT S IL IC O N M O N O LIT H IC T D62381P T I r i K ^ ^ U w f c W ï l 1 W I D I 8 LOW SATU R A T I O N DRIVER Features . Low Saturation Outputs. V q e s a t = 0 . 9 V Max. . O u t p u t R a t i n g .
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D62381P
500mA
5V/500mA
TD62381P
50/ts,
td62381
td62381p
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Untitled
Abstract: No abstract text available
Text: G T 1 5 J 1 0 2 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 1 0 ± 0 -3 . ¿ 3 .2 ± 0 .2 2 .7 ± 0 .2 . High Input Impedance . High Speed : t£=0.35iJs Max. . Lou Saturation Voltage : VcE(sat)"*.OV(Max.) . Enhancement-Mode MAXIMUM RATINGS (Ta«250C)
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35iJs
Tc-25
Ta-25
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TY P E 2SC3420 STROBO FLASH APPLICATIONS. Unit in nun MEDIMUM POWER AMPLIFIER APPLICATIONS. Ì.3MAX. FEATURES: . High DC Current Gain : hpE=140~600 Vc e =2V, Ic =0.5A bFE=70(Min.) (Vqj;=2V, Ic =4A) . Low Saturation Voltage : vCE(sat)=l •0(Max.) (Ic =4A, Ib =0.1A)
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2SC3420
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MG400 TOSHIBA
Abstract: No abstract text available
Text: TOSHIBA MG400Q1US51 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT MG400 1 US51 HIGH P O W ER SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • H igh Input Impedance H ighS peed : tf= 0.3/;s Max. Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)
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MG400Q1US51
MG400
MG400 TOSHIBA
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2SD819
Abstract: No abstract text available
Text: 2SD819 SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit In mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0S5.OMAX. FEATURES: eteLOMAX. • High Voltage :V c b q =1500V . Low Saturation Voltage :VcE sat =4V (Typ.) + 0.09 4.0— 0.03 (IC=3A, IB=0.8A) • High Speed
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2SD819
AC42C
2SD819
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)
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2SD2079
2SB1381.
MAX30
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2SD1411
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1411 INDUSTRIAL APPLICATIONS Unit in n HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 0 3 .J± Q 2 FEAT U R E S : . Low Saturation Voltage : v CE sat = 0-5V(Max.) at Ic=4A . Complementary to 2SB1018 MAXIMUM RATINGS (Ta=25°C)
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2SD1411
2SB1018
2SD1411
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)
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2SC3265
2SA1298
O-236MOD
SC-59CEO
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MG75J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 7 5 J 1 BS1 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm • High Input Impedance • H ighSpeed • Low Saturation Voltage : VQE sat = 2.7V (Max.) (Iq = 75A)
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MG75J1BS11
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2SB907
Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB907 U nit in mm SW ITCH IN G APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. High DC Current Gain : hFE(l) =2000 (Min.) (Vc e = - 2V, I c = - 1 A ) Low Saturation Voltage
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-2SB907
2SD1222.
2SB907
2SB907
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Untitled
Abstract: No abstract text available
Text: 2SA1893 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm ST O R O B E FLASH A PPLIC A TIO N S. M E D IU M P O W E R A M P L IF IE R A PPLIC A TIO N S. = 100~320 (V c e = - 2V, l 0 = —0.5A) hFE = 70 (M in.)(V cE = —2V, I c = - 4 A ) Low Collector Saturation Voltage
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2SA1893
--35V,
--10mA,
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2SD1433
Abstract: No abstract text available
Text: 2SD1433 SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES: . High Voltage : V^go=1500V . Low Saturation Voltage : vCE sat =5V (Max.) (IC=6A, Ib =1.2A) . High Speed : tf=1.0/js (Max.) . Glass Passivated Collector-Base Junction
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2SD1433
2SD1433
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MG400H1FK1
Abstract: LF400A
Text: MG400H1FK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?E=200 Min. . Low Saturation Voltage
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MG400H1FK1
TjSl85'
MG400H1FK1
LF400A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TA8303F TO SH IBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON M ONOLITHIC TA 8303F MOTOR DRIVER FOR CAMERA TA8303F is Multi Chip 1C incorporates 6 low saturation discrete transistors w hich equipped Bias resistor and FreeW heeling diode. This 1C is suitable for a camera use motor drive
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TA8303F
TA8303F
SSOP16
980910EBA2
300mA
500mA
SSOP16-P-225-1
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Untitled
Abstract: No abstract text available
Text: 2SB1018 SILICON PNP EPITAXIAL PLANAR TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. PO W ER AMPLIFIER APPLICATIONS. • • • High Collector Current : I q = —7A Low Collector Saturation Voltage : v CE sat = -0.5V (M ax.) at Ic = -4 A
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2SB1018
2SD1411
2-10L1A
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GT15Q101
Abstract: No abstract text available
Text: GT15Q101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm #3 2±0.2 MOTOR CONTROL APPLICATIONS. I5.9MAX . High Input Impedance . High Speed : tf= 0 . 5ys Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode I1AXIMUM RATINGS (Ta=25°C) SYMBOL
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GT15Q101
2-16C1C
GT15Q101
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2N5551
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage
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2N5551
100MHz
2N5551
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300Q1US41
Abstract: No abstract text available
Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V
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MG300Q1US41
00A/ius
300Q1US41
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TA8317F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP T A 8 i 1 7 F • m m m f ■ m m LED DRIVER FOR CAM ERA TA8317F is Multi Chip IC incorporates 6 low saturation discrete transistors which equipped bias resistor. This IC is suitable for a camera use LED drive
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TA8317F
TA8317F
SSOP16
980910EBA2
SSOP16-P-225-1
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MG400H1UL1
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1UL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : hpE=80 Min. (Ic =400A) . Low Saturation Voltage
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MG400H1UL1
MG400H1UL1
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2SC2562
Abstract: 2SC2562 Toshiba
Text: 2SC2562 SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in m m HIGH CURRENT SW IT C H IN G APPLICATIONS. • • • Low Collector Saturation Voltage : v CE(sat) = °-4V (Max.) (at Ic= 3A ) High Speed Switching Time : tgtg=1.0,us (Typ.)
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2SC2562
2SA1012.
O-220AB
SC-46
2-10A1A
2SC2562
2SC2562 Toshiba
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2SC3475
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3475 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. FEATURES : . Excellent Switching Times : tf=0.5tis Max. (Ic=2A) . Low Collector Saturation Voltage : VCE(sat)=0.6V(Max.) (Ic=2A)
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2SC3475
T0-220
2SC3475
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GT60M101
Abstract: No abstract text available
Text: INSULATED GATE BIPOLAR TRANSISTOR GT60M101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX #3.3±0.2 . High Input Impedance . High Speed : tf=0.7ns Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode 2.51 3.0
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GT60M101
--15V
GT60M101
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